BTB/BTA41

Discrete Triacs(Non-Isolated/Isolated)

Dimensions TO-247AD Dim. Millimeter Inches

Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
G
C 15.75 16.26 0.610 0.640
T2
D 3.55 3.65 0.140 0.144
T1
T2 E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
G J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
T1 L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) TO-247AD Tc = 80 °C 41 A
ITSM Non repetitive surge peak on-state F = 60 Hz t = 16.7 ms 420 A
current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 400
I²t I²t Value for fusing tp = 10 ms 880 A²s
Critical rate of rise of on-state current
dI/dt _ 100 ns
I G = 2 x I GT , tr < F = 120 Hz Tj = 125°C 50 A/µs
VDRM/VRRM
VDSM/V RSM Non repetitive surge peak off-state tp = 10 ms Tj = 25°C V
voltage + 100
IGM Peak gate current tp = 20 µs Tj = 125°C 8 A
PG(AV) Average gate p ower diss ipation Tj = 125°C 1 W
Tstg Storage junction temperature range - 40 to + 150
°C
Tj Operating junction temperature range - 40 to + 125

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Quadrant Value Unit

IGT (1) I - II - III 50 mA

MAX.
IV 100
VD = 12 V RL = 33 Ω
VGT ALL MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V
IH (2) IT = 500 mA MAX. 80 mA
IL IG = 1.2 IGT I- III-IV MAX. 70 mA
II 160
dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 500 V/µs
(dI/dt)c (2) Without snubber Tj = 125°C MIN. 10 A/ms
 BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)

STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit

VTM (2) ITM = 60 A tp = 380 µs Tj = 25°C MAX. 1.55 V

Vto (2) Threshold voltage Tj = 125°C MAX. 0.85 V
Rd (2) Dynamic resistance Tj = 125°C MAX. 10 mΩ
IDRM VDRM = VRRM Tj = 25°C 5 µA
MAX.
IRRM Tj = 125°C 5 mA

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) 0.6 °C/W

Rth(j-a) Junction to ambient 50 °C/W

PRODUCT SELECTOR

Voltage (xxx)
Part Number Sensitivity Type Package
200 V ~~ 1000 V

BTB/BTA41 X X 50 mA Standard TO-247AD

OTHER INFORMATION

Part Number Marking Weight Base Packing

quantity mode

BTB/BTA41 BTB/BTA41 4.5 g 120 Bulk

 BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)

F ig. 1: Maximum power dis s ipation vers us R MS F ig. 2: R MS on-state current vers us cas e
on-s ta te current (full cycle). temperature (full cycle).

P (W) IT (R MS ) (A )
50 45
B TA 41
40
α = 180°
40 35 B T B 41

30
30
25
20
20
180° 15
α
10 α 10
IT (R MS ) (A ) 5 T c (° C )
0 0
0 5 10 15 20 25 30 35 40 0 25 50 75 100 125

F ig. 3: R elative variation of thermal impeda nce F ig. 4: On-s tate cha racteris tics (maximum
versus pulse duration. values ).

K =[Zth/R th] IT M (A )
1.E +00 400
Zth(j-c)

T j max
100
1.E -01
Zth(j-a)
B TA/B T B 41
T j=25°C
10
1.E -02
T j max.:
V to = 0.85 V
R d = 10 mΩ
V T M (V )
tp (s )
1.E -03 1
1.E -03 1.E -02 1.E -01 1.E +00 1.E +01 1.E +02 1.E +03 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

F ig. 5: S urge peak on-s tate current vers us F ig. 6: Non-repetitive s urge pea k on-s tate
number of cycles . current for a s inus oidal puls e with width
tp < 10 ms, and corresponding value of I²t.

IT S M (A ) IT S M (A ), I² t (A ² s )
450 10000
400 IT S M

t=20ms
350 dI/dt limitation:
50A /µs
I²t
One cycle
300 Non repetitive 1000
T j initial=25°C
250
200
150 R epetitive
T c=70°C
100
50 tp (ms ) T j initial=25°C
Number of cycles
0 100
1 10 100 1000 0.01 0.10 1.00 10.00
 BTB/BTA41
Discrete Triacs(Non-Isolated/Isolated)

F ig. 7: R elative varia tion of gate trigger current, F ig. 8: R ela tive variation of critica l rate of decreas e
holding current and latching current vers us of main current vers us (dV /dt)c (typica l values ).
junction temperature (typical values).

IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ] (dI/dt)c [(dV /dt)c ] / S pec ified (dI/dt)c

2.5 2.0
1.8
2.0
IG T 1.6
1.5 1.4
IH & IL
1.2
1.0 1.0
0.8
0.5
T j(° C ) 0.6 (dV /dt)c (V /µs )
0.0 0.4
-40 -20 0 20 40 60 80 100 120 140 0.1 1.0 10.0 100.0

F ig. 9: R elative varia tion of critical rate of

decreas e of main current vers us junction
temperature.

(dI/dt)c [T j] / (dI/dt)c [T j s pec ified]

6

1
T j (° C )
0
0 25 50 75 100 125