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    Datasheet Mje3055

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    seth
    mje

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    © All Rights Reserved
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    Datasheet Mje3055

    Uploaded by

    seth
    227 views4 pages
    mje

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    datasheet mje3055

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    mje

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    227 views4 pages

    Datasheet Mje3055

    Uploaded by

    seth
    mje

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    MJE2955T

    MJE3055T

    COMPLEMENTARY SILICON POWER TRANSISTORS


    ■ SGS-THOMSON PREFERRED SALESTYPES
    ■ COMPLEMENTARY PNP - NPN DEVICES

    DESCRIPTION
    The MJE3055T is a silicon epitaxial-base NPN
    transistor in Jedec TO-220 package. It is
    intended for power switching circuits and
    general-purpose amplifiers. The complementary
    PNP type is MJE2955T. 3
    2
    1

    TO-220

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V CEO Collector-Emitter Voltage (I B = 0) 60 V
    V CBO Collector-Base Voltage (I E = 0) 70 V
    V EBO Emitter-Base Voltage (I C = 0) 5 V
    IC Collector Current 10 A
    IB Base Current 6 A
    P tot Total Power Dissipation at T case ≤ 25 o C 75 W
    o
    T stg Storage Temperature -55 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C
    For PNP types voltage and current values are negative.

    June 1997 1/4


    MJE2955T / MJE3055T

    THERMAL DATA
    o
    R thj-case Thermal Resistance Junction-case Max 1.66 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CEO Collector Cut-off V CE = 30 V 700 µA
    Current (I B = 0)
    I CEX Collector Cut-off V CE = 70 V 1 mA
    Current (V BE = 1.5V) T CASE = 150 o C 5 mA
    I CBO Collector Cut-off V CBO = 70 V 1 mA
    Current (I E = 0) T CASE = 150 o C 10 mA
    I EBO Emitter Cut-off Current V EBO = 5 V 5 mA
    (I C = 0)
    V CEO(sus) ∗ Collector-Emitter I C = 200 mA 60 V
    Sustaining Voltage
    V CE(sat) ∗ Collector-Emitter IC = 4 A I B = 0.4 A 1.1 V
    Sustaining Voltage I C = 10 A I B = 3.3 A 8 V
    V BE(on) ∗ Base-Emitter on IC = 4 A V CE = 4 V 1.8 V
    Voltage
    h FE DC Current Gain IC = 4 A V CE = 4 V 20 70
    I C = 10 A V CE = 4 V 5
    fT Transistor Frequency I C = 500 mA V CE = 10 V 2 MHz
    f = 500 KHz
    ∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %
    For PNP type voltage and current values are negative.

    2/4
    MJE2955T / MJE3055T

    TO-220 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    C 1.23 1.32 0.048 0.051
    D 2.40 2.72 0.094 0.107
    D1 1.27 0.050
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.203
    G1 2.4 2.7 0.094 0.106
    H2 10.0 10.40 0.393 0.409
    L2 16.4 0.645
    L4 13.0 14.0 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.2 6.6 0.244 0.260
    L9 3.5 3.93 0.137 0.154
    DIA. 3.75 3.85 0.147 E 0.151
    A

    D
    C

    D1

    L2
    F1

    G1

    H2
    G

    Dia.
    F
    F2

    L5
    L9
    L7
    L6 L4
    P011C

    3/4
    MJE2955T / MJE3055T

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
    license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
    in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
    SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
    written approval of SGS-THOMSON Microelectonics.

    © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

    SGS-THOMSON Microelectronics GROUP OF COMPANIES


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    Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
    ...

    4/4

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