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    2N7002K Utc

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    aminudin
    This document provides specifications for the UTC 2N7002K power MOSFET, including its maximum ratings, electrical characteristics, test circuits, typical characteristics, and notes. The MOSFET is suitable for use as a load switch or in PWM applications due to its low gate charge and voltages.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2N7002K Utc

    Uploaded by

    aminudin
    6 views6 pages
    This document provides specifications for the UTC 2N7002K power MOSFET, including its maximum ratings, electrical characteristics, test circuits, typical characteristics, and notes. The MOSFET is suitable for use as a load switch or in PWM applications due to its low gate charge and voltages.

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    2N7002K-UTC

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    This document provides specifications for the UTC 2N7002K power MOSFET, including its maximum ratings, electrical characteristics, test circuits, typical characteristics, and notes. The MOSFET is suitable for use as a load switch or in PWM applications due to its low gate charge and voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    6 views6 pages

    2N7002K Utc

    Uploaded by

    aminudin
    This document provides specifications for the UTC 2N7002K power MOSFET, including its maximum ratings, electrical characteristics, test circuits, typical characteristics, and notes. The MOSFET is suitable for use as a load switch or in PWM applications due to its low gate charge and voltages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    UNISONIC TECHNOLOGIES CO.

    , LTD
    2N7002K Power MOSFET

    300mA, 60V N-CHANNEL


    ENHANCEMENT MODE
    MOSFET

     DESCRIPTION
    The UTC 2N7002K uses advanced technology to provide
    excellent RDS(ON), low gate charge and low gate voltages during
    operation. This device is suitable for use as a load switch or in
    PWM applications.

     FEATURES
    * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
    * ESD Protected
    * Fast Switching Capability
    * Avalanche Energy Specified
    * Improved dv/dt Capability, High Ruggedness

     SYMBOL
    3.Drain

    1.Gate

    2.Source

     ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Lead Free Halogen Free 1 2 3
    2N7002KL-AE2-R 2N7002KG-AE2-R SOT-23-3 G S D Tape Reel
    Note: Pin Assignment: G: Gate S: Source D: Drain

     MARKING

    www.unisonic.com.tw 1 of 4
    Copyright © 2018 Unisonic Technologies Co., Ltd QW-R502-541.E
    2N7002K Power MOSFET

     ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)


    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage VDSS 60 V
    Gate-Source Voltage VGSS ±20 V
    Continuous 300
    Drain Current ID mA
    Pulse(Note 2) 800
    Power Dissipation 350 mW
    PD
    Derating above TA=25°C 2.8 mW/°C
    Junction Temperature TJ +150 °C
    Storage Temperature TSTG -55 ~ +150 °C
    Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
     ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10µA 60 V
    Drain-Source Leakage Current IDSS VDS=60V, VGS=0V 1.0 µA
    Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ±10 µA
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS=10V, ID=1mA 1.0 1.85 2.5 V
    VGS=10V, ID=300m A 2 Ω
    Static Drain-Source On-Resistance (Note) RDS(ON)
    VGS=4.5V, ID=200mA 4 Ω
    DYNAMIC PARAMETERS
    Input Capacitance (Note 1) CISS 25 pF
    Output Capacitance COSS VDS=25V, VGS=0V, f=1.0MHz 11 pF
    Reverse Transfer Capacitance CRSS 5 pF
    SWITCHING PARAMETERS
    Total Gate Charge (Note 1) QG 5.22 nC
    VDS=48V, VGS=10V, ID=0.3A
    Gate to Source Charge QGS 1.8 nC
    IG=1mA (Note 1, 2)
    Gate to Drain Charge QGD 0.8 nC
    Turn-ON Delay Time tD(ON) ID=0.2 A, VDD=30V, VGS=10V, 12 ns
    Turn-OFF Delay Time tD(OFF) RL=150Ω, RG=10Ω 20 ns
    DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
    Maximum Continuous Drain-Source Diode
    IS 300 mA
    Forward Current
    Maximum Pulsed Drain-Source Diode
    ISM 0.8 A
    Forward Current
    S
    Drain-Source Diode Forward Voltage VSD VGS=0V, I =300mA (Note ) 0.88 1.5 V
    Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
    2. Pulse width≦300μs, Duty cycle≦1%

    UNISONIC TECHNOLOGIES CO., LTD 2 of 6


    www.unisonic.com.tw QW-R502-541.E
    2N7002K Power MOSFET
     TEST CIRCUITS AND WAVEFORMS

    Switching Test Circuit Switching Waveforms

    UNISONIC TECHNOLOGIES CO., LTD 3 of 6


    www.unisonic.com.tw QW-R502-541.E
    2N7002K Power MOSFET

     TYPICAL CHARACTERISTICS

    UNISONIC TECHNOLOGIES CO., LTD 4 of 6


    www.unisonic.com.tw QW-R502-541.E
    2N7002K Power MOSFET

     TYPICAL CHARACTERISTICS (Cont.)

    UNISONIC TECHNOLOGIES CO., LTD 5 of 6


    www.unisonic.com.tw QW-R502-541.E
    2N7002K Power MOSFET

     TYPICAL CHARACTERISTICS (Cont.)

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
    parameters) listed in products specifications of any and all UTC products described or contained herein.
    UTC products are not designed for use in life support appliances, devices or systems where malfunction
    of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
    part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
    make changes to information published in this document, including without limitation specifications and
    product descriptions, at any time and without notice. This document supersedes and replaces all
    information supplied prior to the publication hereof.

    UNISONIC TECHNOLOGIES CO., LTD 6 of 6


    www.unisonic.com.tw QW-R502-541.E

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