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    Semiconductor 2N3904SC: Technical Data

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    This document provides specifications for the 2N3904SC semiconductor, an epitaxial planar NPN transistor for general and switching applications. It has low leakage current and excellent DC current gain linearity. Key ratings and characteristics include a maximum collector-emitter voltage of 40V, DC current gain of 150-250, and saturation voltage below 0.3V. The 2N3904SC is complementary to the 2N3906SC transistor.

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    Semiconductor 2N3904SC: Technical Data

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    Tama Classic
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    This document provides specifications for the 2N3904SC semiconductor, an epitaxial planar NPN transistor for general and switching applications. It has low leakage current and excellent DC current gain linearity. Key ratings and characteristics include a maximum collector-emitter voltage of 40V, DC current gain of 150-250, and saturation voltage below 0.3V. The 2N3904SC is complementary to the 2N3906SC transistor.

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    This document provides specifications for the 2N3904SC semiconductor, an epitaxial planar NPN transistor for general and switching applications. It has low leakage current and excellent DC current gain linearity. Key ratings and characteristics include a maximum collector-emitter voltage of 40V, DC current gain of 150-250, and saturation voltage below 0.3V. The 2N3904SC is complementary to the 2N3906SC transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    43 views3 pages

    Semiconductor 2N3904SC: Technical Data

    Uploaded by

    Tama Classic
    This document provides specifications for the 2N3904SC semiconductor, an epitaxial planar NPN transistor for general and switching applications. It has low leakage current and excellent DC current gain linearity. Key ratings and characteristics include a maximum collector-emitter voltage of 40V, DC current gain of 150-250, and saturation voltage below 0.3V. The 2N3904SC is complementary to the 2N3906SC transistor.

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    of 3

    SEMICONDUCTOR 2N3904SC

    TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

    GENERAL PURPOSE APPLICATION.


    SWITCHING APPLICATION.

    FEATURES
    ・Low Leakage Current
    : ICEX=50nA(Max.), IBL=50nA(Max.)
    @VCE=30V, VEB=3V.
    ・Excellent DC Current Gain Linearity.
    ・Low Saturation Voltage
    : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
    ・Complementary to 2N3906SC.

    MAXIMUM RATING (Ta=25℃)


    CHARACTERISTIC SYMBOL RATING UNIT
    Collector-Base Voltage VCBO 60 V
    Collector-Emitter Voltage VCEO 40 V
    Emitter-Base Voltage VEBO 6 V
    Collector Current IC 200 mA
    Base Current IB 50 mA
    Collector Power Dissipation PC * 350 mW
    Junction Temperature Tj 150 ℃
    Storage Temperature Range Tstg -55～150 ℃
    * PC : Package Mounted On 99.5% Alumina 10×8×0.6㎜)

    2015. 5. 12 Revision No : 0 1/3


    2N3904SC

    ELECTRICAL CHARACTERISTICS (Ta=25℃)


    CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
    Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA
    Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA
    Emitter Cut-off Current IEBO VEB=3V, IC=0 - - 100 nA
    Collector-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0 60 - - V
    Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V
    Emitter-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0 6.0 - - V
    DC Current Gain * hFE VCE=1V, IC=10mA 150 - 250
    Collector-Emitter Saturation Voltage * VCE(sat) IC=50mA, IB=5mA - - 0.3 V
    Base-Emitter Saturation Voltage * VBE(sat) IC=50mA, IB=5mA - - 0.95 V
    Transition Frequency fT VCE=20V, IC=10mA, f=100MHz 250 - - MHz

    Delay Time td - - 35

    Rise Time tr - - 35

    Switching Time nS

    Storage Time tstg - - 200

    Fall Time tf - - 50

    * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.

    2015. 5. 12 Revision No : 0 2/3


    2N3904SC

    2015. 5. 12 Revision No : 0 3/3

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