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    Transistor Datasheet MMBT3906 200ma 40V PNP 36 SMD (ST)

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    Frame Josh
    The document provides data on the MMBT3906 small signal PNP transistor, including its applications, internal schematic, absolute maximum ratings, thermal data, electrical characteristics, and mechanical dimensions. It details specifications for the transistor in a SOT-23 plastic package.

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    © All Rights Reserved
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    Transistor Datasheet MMBT3906 200ma 40V PNP 36 SMD (ST)

    Uploaded by

    Frame Josh
    74 views4 pages
    The document provides data on the MMBT3906 small signal PNP transistor, including its applications, internal schematic, absolute maximum ratings, thermal data, electrical characteristics, and mechanical dimensions. It details specifications for the transistor in a SOT-23 plastic package.

    Original Title

    Transistor Datasheet MMBT3906 200mA 40V PNP 36 SMD[ST]

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    The document provides data on the MMBT3906 small signal PNP transistor, including its applications, internal schematic, absolute maximum ratings, thermal data, electrical characteristics, and mechanical dimensions. It details specifications for the transistor in a SOT-23 plastic package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    74 views4 pages

    Transistor Datasheet MMBT3906 200ma 40V PNP 36 SMD (ST)

    Uploaded by

    Frame Josh
    The document provides data on the MMBT3906 small signal PNP transistor, including its applications, internal schematic, absolute maximum ratings, thermal data, electrical characteristics, and mechanical dimensions. It details specifications for the transistor in a SOT-23 plastic package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    ® MMBT3906

    SMALL SIGNAL PNP TRANSISTOR


    PRELIMINARY DATA

    Type Marking
    MMBT3906 36

    ■ SILICON EPITAXIAL PLANAR PNP


    TRANSISTOR
    ■ MINIATURE SOT-23 PLASTIC PACKAGE
    FOR SURFACE MOUNTING CIRCUITS
    ■ TAPE AND REEL PACKING
    ■ THE NPN COMPLEMENTARY TYPE IS
    MMBT3904

    APPLICATIONS
    ■ WELL SUITABLE FOR PORTABLE SOT-23
    EQUIPMENT
    ■ SMALL LOAD SWITCH TRANSISTOR WITH

    HIGH GAIN AND LOW SATURATION


    VOLTAGE

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V CBO Collector-Base Voltage (I E = 0) -60 V
    V CEO Collector-Emitter Voltage (I B = 0) -40 V
    V EBO Emitter-Base Voltage (I C = 0) -6 V
    IC Collector Current -200 mA
    o
    P tot Total Dissipation at T C = 25 C 350 mW
    o
    T stg Storage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C

    June 2002 1/4


    MMBT3906

    THERMAL DATA

    R thj-amb • Thermal Resistance Junction-Ambient Max 357.1 o


    C/W
    2
    • Device mounted on a PCB area of 1 cm

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CEX Collector Cut-off V CE = -30 V -50 nA
    Current (V BE = 3 V)
    I BEX Collector Cut-off V CE = -30 V -50 nA
    Current (V BE = 3 V)
    V (BR)CEO ∗ Collector-Emitter I C = -1 mA -40 V
    Breakdown Voltage
    (I B = 0)
    V (BR)CBO Collector-Base I C = -10 µA -60 V
    Breakdown Voltage
    (I E = 0)
    V (BR)EBO Emitter-Base I E = -10 µA -6 V
    Breakdown Voltage
    (I C = 0)
    V CE(sat) ∗ Collector-Emitter I C = -10 mA I B = -1 mA -0.25 V
    Saturation Voltage I C = -50 mA I B = -5 mA -0.4 V
    V BE(sat) ∗ Base-Emitter I C = -10 mA I B = -1 mA -0.85 V
    Saturation Voltage I C = -50 mA I B = -5 mA -0.65 -0.95 V
    h FE ∗ DC Current Gain IC = -0.1 mA V CE = -1 V 60
    IC = -1 mA V CE = -1 V 80
    IC = -10 mA V CE = -1 V 100 300
    IC = -50 mA V CE = -1 V 60
    IC = -100 mA V CE = -1 V 30
    fT Transition Frequency I C = -10mA V CE = -20 V f = 100MHz 250 MHz
    NF Noise Figure V CE = -5 V I C = -0.1 mA f = 10 Hz 4 dB
    to 15.7 KHz R G = 1 KΩ
    C CBO Collector-Base IE = 0 V CB = -5 V f = 100 KHz 6 pF
    Capacitance
    C EBO Emitter-Base IC = 0 VEB = -0.5 V f = 100 KHz 25 pF
    Capacitance
    td Delay Time I C = -10 mA I B = -1 mA 35 ns
    V CC = -3V
    tr Rise Time 35 ns
    ts Storage Time I C = -10 mA I B1 = -I B2 = -1 mA 225 ns
    V CC = -3V
    tf Fall Time 72 ns
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

    2/4
    MMBT3906

    SOT-23 MECHANICAL DATA

    mm mils
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 0.85 1.1 33.4 43.3

    B 0.65 0.95 25.6 37.4

    C 1.20 1.4 47.2 55.1

    D 2.80 3 110.2 118

    E 0.95 1.05 37.4 41.3

    F 1.9 2.05 74.8 80.7

    G 2.1 2.5 82.6 98.4

    H 0.38 0.48 14.9 18.8

    L 0.3 0.6 11.8 23.6

    M 0 0.1 0 3.9

    N 0.3 0.65 11.8 25.6

    O 0.09 0.17 3.5 6.7

    0044616/B

    3/4
    MMBT3906

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

    © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

    http://www.st.com

    4/4

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