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    3DD13002 Fluorecente Compacta

    Uploaded by

    Wanderley Moreira
    This document provides specifications for the 3DD13002/3DD13002B plastic-encapsulated NPN transistor from Jiangsu Changjiang Electronics Technology Co., Ltd. Key specifications include a maximum power dissipation of 900mW at 25°C, collector currents of 1A for the 3DD13002 and 0.8A for the 3DD13002B, and an operating and storage temperature range of -55°C to +150°C. Electrical characteristics include a collector-base breakdown voltage of 600V, transition frequency of 5MHz, and fall time of 0.5μs.

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    3DD13002 Fluorecente Compacta

    Uploaded by

    Wanderley Moreira
    9 views1 page
    This document provides specifications for the 3DD13002/3DD13002B plastic-encapsulated NPN transistor from Jiangsu Changjiang Electronics Technology Co., Ltd. Key specifications include a maximum power dissipation of 900mW at 25°C, collector currents of 1A for the 3DD13002 and 0.8A for the 3DD13002B, and an operating and storage temperature range of -55°C to +150°C. Electrical characteristics include a collector-base breakdown voltage of 600V, transition frequency of 5MHz, and fall time of 0.5μs.

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    This document provides specifications for the 3DD13002/3DD13002B plastic-encapsulated NPN transistor from Jiangsu Changjiang Electronics Technology Co., Ltd. Key specifications include a maximum power dissipation of 900mW at 25°C, collector currents of 1A for the 3DD13002 and 0.8A for the 3DD13002B, and an operating and storage temperature range of -55°C to +150°C. Electrical characteristics include a collector-base breakdown voltage of 600V, transition frequency of 5MHz, and fall time of 0.5μs.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views1 page

    3DD13002 Fluorecente Compacta

    Uploaded by

    Wanderley Moreira
    This document provides specifications for the 3DD13002/3DD13002B plastic-encapsulated NPN transistor from Jiangsu Changjiang Electronics Technology Co., Ltd. Key specifications include a maximum power dissipation of 900mW at 25°C, collector currents of 1A for the 3DD13002 and 0.8A for the 3DD13002B, and an operating and storage temperature range of -55°C to +150°C. Electrical characteristics include a collector-base breakdown voltage of 600V, transition frequency of 5MHz, and fall time of 0.5μs.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

    , LTD

    TO-92 Plastic-Encapsulate Transistors

    3DD13002/ 3DD13002B TRANSISTOR (NPN)


    TO-92

    FEATURE
    Power dissipation 1. EMITTER

    PCM: 900 mW (Tamb=25℃) 2. COLLECTOR

    Collector current 3. BASE


    ICM: 3DD13002: 1 A
    3DD13002B: 0.8 A 1 2 3

    Collector-base voltage
    V(BR)CBO: 600 V
    Operating and storage junction temperature range

    TJ, Tstg: -55℃ to +150℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 600 V

    Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA, IB=0 400 V

    Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V

    Collector cut-off current ICBO VCB= 600V, IE=0 100 µA

    Emitter cut-off current IEBO VEB= 6V, IC=0 100 µA

    hFE(1) VCE= 10V, IC= 200 mA 9 40

    hFE(2) VCE= 10V, IC= 10 mA 6

    Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40 mA 0.5 V

    Base-emitter saturation voltage VBE(sat) IC=200mA, IB=40 mA 1.1 V

    VCE=10V, Ic=100mA
    Transition frequency fT 5 MHz
    f =1MHz

    Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs

    VCC=100V
    Storage time ts 2.5 µs

    CLASSIFICATION OF hFE(1)
    Range 9-15 15-20 20-25 25-30 30-35 35-40

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