DISCRETE SEMICONDUCTORS

DATA SHEET

M3D110

BC160; BC161
PNP medium power transistors
Product specification 1997 May 12
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

FEATURES PINNING
• High current (max. 1 A) PIN DESCRIPTION
• Low voltage (max. 60 V). 1 emitter
2 base
APPLICATIONS 3 collector, connected to case
• General purpose applications.

DESCRIPTION 1
handbook, halfpage
2 3
PNP medium power transistor in a TO-39 metal package.
NPN complements: BC140 and BC141. 2

3 1
MAM334

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter
BC160 − − −40 V
BC161 − − −60 V
VCES collector-emitter voltage open base
BC160 − − −40 V
BC161 − − −60 V
ICM peak collector current − − −1.5 A
Ptot total power dissipation Tcase ≤ 45 °C − − 3.7 W
hFE DC current gain IC = −100 mA; VCE = −1 V
BC160-10; BC161-10 63 100 160
BC160-16; BC161-16 100 160 250
fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 50 − − MHz

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Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC160 − −40 V
BC161 − −60 V
VCEO collector-emitter voltage open base
BC160 − −40 V
BC161 − −60 V
VEBO emitter-base voltage open collector − −5 V
IC collector current (DC) − −1 A
ICM peak collector current − −1.5 A
IBM peak base current − −200 mA
Ptot total power dissipation Tcase ≤ 45 °C − 3.7 W
Tstg storage temperature −65 +150 °C
Tj junction temperature − 175 °C
Tamb operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 200 K/W
Rth j-c thermal resistance from junction to case 35 K/W

1997 May 12 3
Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = −40 V − −10 −100 nA
IE = 0; VCB = −40 V; Tj = 150 °C − −10 −100 µA
IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA
hFE DC current gain IC = −100 µA; VCE = −1 V
BC160-10; BC161-10 − 80 −
BC160-16; BC161-16 − 120 −
hFE DC current gain IC = −100 mA; VCE = −1 V
BC160-10; BC161-10 63 100 160
BC160-16; BC161-16 100 160 250
hFE DC current gain IC = −1 A; VCE = −1 V
BC160-10; BC161-10 − 20 −
BC160-16; BC161-16 − 30 −
VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA − −0.6 −1 V
VBE base-emitter voltage IC = −1 A; VCE = −1 V − −1 −1.7 V
Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 30 pF
Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − − 180 pF
fT transition frequency IC = −50 mA; VCE = −10 V; 50 − − MHz
f = 100 MHz
Switching times (between 10% and 90% levels)
ton turn-on time ICon = −100 mA; IBon = −5 mA; − − 500 ns
toff turn-off time IBoff = 5 mA − − 650 ns

1997 May 12 4
Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

PACKAGE OUTLINE

Metal-can cylindrical single-ended package; 3 leads SOT5/11

seating plane
j α

B w M A M B M
1
b

k D1
2

A D A L

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A a b D D1 j k L w α

6.60 0.48 9.39 8.33 0.85 0.95 14.2

mm
6.35
5.08
0.41 9.08 8.18 0.75 0.75 0.2 45°
12.7

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT5/11 TO-39 97-04-11

1997 May 12 5
Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 May 12 6
Philips Semiconductors Product specification

PNP medium power transistors BC160; BC161

NOTES

1997 May 12 7
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© Philips Electronics N.V. 1997 SCA54

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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 12 Document order number: 9397 750 02281