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    Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

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    Ruben Mapalo
    The 2SA1263N is a silicon PNP power transistor in a TO-3P(I) package. It is designed for power amplifier applications and complements the 2SC3180N transistor. Key specifications include a collector current rating of -6A, voltage ratings of -80V for collector-base and collector-emitter voltages, and power dissipation of 60W at a junction temperature of 150°C. It provides DC current gains of 55-160 at -1A collector current and 35 at -3A collector current.

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    Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Ruben Mapalo
    29 views4 pages
    The 2SA1263N is a silicon PNP power transistor in a TO-3P(I) package. It is designed for power amplifier applications and complements the 2SC3180N transistor. Key specifications include a collector current rating of -6A, voltage ratings of -80V for collector-base and collector-emitter voltages, and power dissipation of 60W at a junction temperature of 150°C. It provides DC current gains of 55-160 at -1A collector current and 35 at -3A collector current.

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    Data Sheet

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    The 2SA1263N is a silicon PNP power transistor in a TO-3P(I) package. It is designed for power amplifier applications and complements the 2SC3180N transistor. Key specifications include a collector current rating of -6A, voltage ratings of -80V for collector-base and collector-emitter voltages, and power dissipation of 60W at a junction temperature of 150°C. It provides DC current gains of 55-160 at -1A collector current and 35 at -3A collector current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views4 pages

    Silicon PNP Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    Ruben Mapalo
    The 2SA1263N is a silicon PNP power transistor in a TO-3P(I) package. It is designed for power amplifier applications and complements the 2SC3180N transistor. Key specifications include a collector current rating of -6A, voltage ratings of -80V for collector-base and collector-emitter voltages, and power dissipation of 60W at a junction temperature of 150°C. It provides DC current gains of 55-160 at -1A collector current and 35 at -3A collector current.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1263N

    DESCRIPTION
    ·With TO-3P(I) package
    ·Complement to type 2SC3180N
    ·2SA1263 with short pin

    APPLICATIONS
    ·Power amplifier applications

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3P(I)) and symbol
    3 Base

    Absolute maximum ratings(Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -80 V

    VCEO Collector-emitter voltage Open base -80 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -6 A

    IB B Base current -0.6 A

    PT Total power dissipation TC=25℃ 60 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1263N

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -80 V

    VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 -2.0 V

    VBE Base-emitter on voltage IC=-3A ; VCE=-5V -0.95 -1.5 V

    ICBO Collector cut-off current VCB=-80V; IE=0 -5 μA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA

    hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160

    hFE-2 DC current gain IC=-3A ; VCE=-5V 35

    fT Transition frequency IC=-1A ; VCE=-5V 30 MHz

    Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 290 pF

    ‹ hFE-1 Classifications
    R O

    55-110 80-160

    2
    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1263N

    PACKAGE OUTLINE

    Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

    3
    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1263N

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