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    2SA1006B

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    isaiasva
    This document provides product specifications for SavantIC Semiconductor's silicon PNP power transistors models 2SA1006, 2SA1006A, and 2SA1006B. The transistors are in a TO-220 package and are intended for applications such as audio frequency and high frequency power amplifiers. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Typical values are given for characteristics such as saturation voltage, current gain, output capacitance, and transition frequency. Dimension drawings of the TO-220 package are also included.

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    2SA1006B

    Uploaded by

    isaiasva
    110 views5 pages
    This document provides product specifications for SavantIC Semiconductor's silicon PNP power transistors models 2SA1006, 2SA1006A, and 2SA1006B. The transistors are in a TO-220 package and are intended for applications such as audio frequency and high frequency power amplifiers. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Typical values are given for characteristics such as saturation voltage, current gain, output capacitance, and transition frequency. Dimension drawings of the TO-220 package are also included.

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    SavantIC Semiconductor

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    This document provides product specifications for SavantIC Semiconductor's silicon PNP power transistors models 2SA1006, 2SA1006A, and 2SA1006B. The transistors are in a TO-220 package and are intended for applications such as audio frequency and high frequency power amplifiers. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Typical values are given for characteristics such as saturation voltage, current gain, output capacitance, and transition frequency. Dimension drawings of the TO-220 package are also included.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    110 views5 pages

    2SA1006B

    Uploaded by

    isaiasva
    This document provides product specifications for SavantIC Semiconductor's silicon PNP power transistors models 2SA1006, 2SA1006A, and 2SA1006B. The transistors are in a TO-220 package and are intended for applications such as audio frequency and high frequency power amplifiers. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. Typical values are given for characteristics such as saturation voltage, current gain, output capacitance, and transition frequency. Dimension drawings of the TO-220 package are also included.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B

    DESCRIPTION ·

    ·With TO-220 package


    ·Complement to type 2SC2336,
    2SC2336A,2SC2336B

    APPLICATIONS
    ·Audio frequency power amplifier
    ·High frequency power amplifier

    PINNING

    PIN DESCRIPTION

    1 Emitter
    Collector;connected to
    2 Fig.1 simplified outline (TO-220) and symbol
    mounting base
    3 Base

    Absolute maximum ratings(Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    2SA1006 -180

    VCBO 2SA1006A Open emitter -200 V


    Collector-base voltage
    2SA1006B -250

    2SA1006 -180

    VCEO 2SA1006A Open base -200 V


    Collector-emitter voltage
    2SA1006B -250

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -1.5 A

    ICM Collector current-Peak -3.0 A

    Ta=25 1.5
    PT Total power dissipation W
    TC=25 25

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 V

    VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V

    ICBO Collector cut-off current VCB=-150V ;IE=0 -1 µA

    IEBO Emitter cut-off current VEB=-3V; IC=0 -1 µA

    hFE-1 DC current gain IC=-5mA ; VCE=-5V 30

    hFE-2 DC current gain IC=-150mA ; VCE=-5V 60 320

    Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 45 pF

    fT Transition frequency IC=-100mA ; VCE=10V 80 MHz

    hFE-2 Classifications

    R Q P

    60-120 100-200 160-320

    2
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B

    PACKAGE OUTLINE

    Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)

    3
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B

    4
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B

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