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    MPSA94: PNP Silicon Planar High Voltage Transistor

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    Fernando Soto
    This document provides specifications for the MPSA94 PNP silicon planar high voltage transistor. It is not recommended for new designs and designers are instructed to use the ZTX758 transistor instead. Key specifications include supporting collector-emitter voltages up to -400V, a continuous collector current rating of -300mA, and power dissipation of up to 625mW at 25°C. Electrical characteristics include breakdown and saturation voltages as well as static forward current transfer ratios ranging from 40 to 300 depending on collector current levels.

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    MPSA94: PNP Silicon Planar High Voltage Transistor

    Uploaded by

    Fernando Soto
    34 views1 page
    This document provides specifications for the MPSA94 PNP silicon planar high voltage transistor. It is not recommended for new designs and designers are instructed to use the ZTX758 transistor instead. Key specifications include supporting collector-emitter voltages up to -400V, a continuous collector current rating of -300mA, and power dissipation of up to 625mW at 25°C. Electrical characteristics include breakdown and saturation voltages as well as static forward current transfer ratios ranging from 40 to 300 depending on collector current levels.

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    This document provides specifications for the MPSA94 PNP silicon planar high voltage transistor. It is not recommended for new designs and designers are instructed to use the ZTX758 transistor instead. Key specifications include supporting collector-emitter voltages up to -400V, a continuous collector current rating of -300mA, and power dissipation of up to 625mW at 25°C. Electrical characteristics include breakdown and saturation voltages as well as static forward current transfer ratios ranging from 40 to 300 depending on collector current levels.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views1 page

    MPSA94: PNP Silicon Planar High Voltage Transistor

    Uploaded by

    Fernando Soto
    This document provides specifications for the MPSA94 PNP silicon planar high voltage transistor. It is not recommended for new designs and designers are instructed to use the ZTX758 transistor instead. Key specifications include supporting collector-emitter voltages up to -400V, a continuous collector current rating of -300mA, and power dissipation of up to 625mW at 25°C. Electrical characteristics include breakdown and saturation voltages as well as static forward current transfer ratios ranging from 40 to 300 depending on collector current levels.

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    © All Rights Reserved
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    of 1

    Not Recommended for New Design

    Please Use ZTX758


    PNP SILICON PLANAR
    HIGH VOLTAGE TRANSISTOR MPSA94
    ISSUE 2 – MARCH 94
    FEATURES
    * High voltage

    APPLICATIONS
    * Telephone dialler circuit
    E
    B
    C

    TO92
    ABSOLUTE MAXIMUM RATINGS.
    PARAMETER SYMBOL VALUE UNIT
    Collector-Base Voltage VCBO -400 V
    Collector-Emitter Voltage VCEO -400 V
    Emitter-Base Voltage VEBO -6 V
    Continuous Collector Current IC -300 mA
    Power Dissipation at Tamb =25°C Ptot 625 mW
    Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

    ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).


    PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
    Collector-Base V(BR)CBO -400 V IC=-100µ A, IE=0
    Breakdown Voltage
    Collector-Emitter V(BR)CEO -400 V IC=-1mA, IB=0*
    Breakdown Voltage
    Collector-Emitter V(BR)CES -400 V IC=-100µ A, IE=0
    Breakdown Voltage
    Emitter-Base V(BR)EBO -6 V IE=-100µ A, IC=0
    Breakdown Voltage
    Collector Cut-Off ICBO -0.1 µA VCB=-400V, IE=0
    Current
    Collector Cut-Off ICES -500 nA VCE=-400V
    Current
    Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V, IC=0
    Collector-Emitter VCE(sat) -0.4 V IC=-1mA, IB=-0.1mA*
    Saturation Voltage -0.5 IC=-10mA, IB=-1mA*
    -0.75 IC=-50mA, IB=-5mA*
    Base-Emitter VBE(sat) -0.75 V IC=-10mA, IB=-1mA*
    Saturation Voltage
    Static Forward Current hFE 40 IC=-1mA, VCE=-10V*
    Transfer Ratio 50 300 IC=-10mA, VCE=-10V*
    45 IC=-50mA, VCE=-10V*
    40 IC=-100mA, VCE=-10V*
    *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

    3-86

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