Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters and inverters, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 1.5 A
ICM Collector current peak value - 3 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 50 W
VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - 1.0 V
hFE IC = 1.0 A; VCE = 5 V - 25
tfi Fall time (Inductive) IC = 1.0 A; IBON = 0.2 A - 150 ns

PINNING - SOT533 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
1 base

2 collector
b
3 emitter
tab collector 1 2 3

Top view MBK915 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector to emitter voltage VBE = 0 V - 700 V
VCEO Collector to emitter voltage (open base) - 400 V
VCBO Collector to base voltage (open emitter) - 700 V
IC Collector current (DC) - 1.5 A
ICM Collector current peak value - 3 A
IB Base current (DC) - 0.75 A
IBM Base current peak value - 1.5 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 50 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - 2.5 K/W
Rth j-a Junction to ambient in free air 70 - K/W

September 1999 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICES,ICBO Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 5.0 mA
Tj = 125 ˚C
ICEO Collector cut-off current 1 VCEO = VCEOMmax (400V) - - 0.1 mA
IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - - 1 mA
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; 400 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - - 1.2 V
hFE DC current gain IC = 100mA; VCE = 5 V 8 - 40
hFE IC = 1.0 A; VCE = 5 V 5 - 25

DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) ICon = 1.0 A; IBon = -IBoff = 0.2 A;
RL = 75 ohms; VBB2 = 4V;
ton Turn-on time - 0.9 µs
ts Turn-off storage time - 4.0 µs
tf Turn-off fall time - 0.7 µs
Switching times (inductive load) ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH;
-VBB = 5 V
ts Turn-off storage time - 2 µs
tf Turn-off fall time - 100 ns
Switching times (inductive load) ICon = 1.0 A; IBon = 0.2 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
ts Turn-off storage time - 4 µs
tf Turn-off fall time - 150 ns

1 Measured with half sine-wave voltage (curve tracer).

September 1999 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

! 10
Zth j-mb / (K/W)
+ 50v
100-200R
D=

0.5
1

Horizontal 0.2
0.1
Oscilloscope
0.05
Vertical 0.1
0.02 tp tp
PD D=
T
300R 1R 0
6V t
30-60 Hz T
0.01
10us 1ms 0.1s 10ms
Fig.1. Test circuit for VCEOsust. t/s
Fig.4. Transient thermal impedance.
Zth j-lead = f(t); parameter D = tp/T

HFE
IC / mA 30

125 C

20

15

-40 C

10 25 C
250

VCE = 1V
5

100

10
0
VCE / V min

VCEOsust
1
Fig.2. Oscilloscope display for VCEOsust. 0.001 0.01 0.1
IC/A
1 2 3 5

Fig.5. Typical DC current gain. hFE = f(IC)

parameter VCE

HFE
PD% Normalised Power Derating 30
120 125 C

110
100
-40 C
90 25 C

80 10

70
VCE = 5V
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 1
0.001 0.01 0.1 1 2 3 5
Tmb / C IC/A

Fig.3. Normalised power dissipation. Fig.6. Typical DC current gain. hFE = f(IC)
PD% = 100⋅PD/PD 25˚C = f (Tmb) parameter VCE

September 1999 3 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

VCEsat VOLTAGE/V VBEsat VOLTAGE/V

2 1.5

1.4

1.3 IC/IB = 3
1.5 125 C
1.2

1.1

-40 C
1 IC/IB = 3 1

25 C
0.9
25 C

0.8

0.5

0.7
125 C

0.6
-40 C
0 0.5
0.01 0.1 1 2 0.01 0.1 1 2
IC, COLLECTOR CURRENT/A IC, COLLECTOR CURRENT/A

Fig.7. Collector-Emitter saturation voltage. Fig.8. Base-Emitter saturation voltage.

Solid Lines = typ values, IC/IB = 3 Solid Lines = typ values, IC/IB = 3

VCC ICon
90 %

IC

LC
10 %

ts tf t
IBon LB toff
T.U.T. IB IBon

-VBB
t

-IBoff

Fig.9. Test circuit inductive load. Fig.10. Switching times waveforms with inductive load.
VCC = 300 V; -VBE = 5 V, LC = 200 µH; LB = 1 µH

VCC ICon
90 % 90 %

IC
RL 10 %

VIM ts
RB ton tf
toff
0 T.U.T.
IBon
IB
tp
10 %
T tr 30ns

-IBoff
Fig.11. Test circuit resistive load. VIM = -6 to +8 V Fig.12. Switching times waveforms with resistive load.
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.

September 1999 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

IC/A
VCC 2.5

2.25

1.75

LC 1.5

1.25
VCL(RBSOAR)
1
PROBE POINT
IBon LB 0.75
-9V

-5V
-3V
0.5
-1V

-VBB T.U.T. 0.25

0
0 100 200 300 400 500 600 700 800
VCEclamp/V

Fig.13. Test Circuit for the RBSOA test. Fig.14. Reverse bias safe operating area Tj ≤ Tjmax
Vcl ≤ 700V; Vcc = 150V; LB = 1µH; Lc = 200µH for -VBE = 9V, 5V,3V & 1V

September 1999 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

MECHANICAL DATA
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533

E A
E1 A1

D1
mounting
base

1 2 3

e1 b w M c
e

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT A A1 b c D D1 E E1 e e1 L Q

mm 2.38 0.89 0.89 0.56 7.28 1.06 6.73 5.36 9.8 1.00
4.57 2.285
2.22 0.71 0.71 0.46 6.94 0.96 6.47 5.26 9.4 1.10

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT533 TO-251 99-02-18

Fig.15. SOT533 surface mounting package. Pin 2 connected to mounting base.

September 1999 6 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor PHE13003AU

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1999 7 Rev 1.000