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    2SB596

    Uploaded by

    nugroho_budi
    This document provides product specifications for the Inchange Semiconductor 2SB596 silicon PNP power transistor. It includes descriptions of the device, its applications in audio power amplifiers from 20-25W, pinout details, absolute maximum ratings, electrical characteristics, and package outline dimensions. The transistor has a TO-220C package and is well-suited for linear power amplifier applications requiring good hFE linearity from 0.5-3A collector currents.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SB596

    Uploaded by

    nugroho_budi
    80 views4 pages
    This document provides product specifications for the Inchange Semiconductor 2SB596 silicon PNP power transistor. It includes descriptions of the device, its applications in audio power amplifiers from 20-25W, pinout details, absolute maximum ratings, electrical characteristics, and package outline dimensions. The transistor has a TO-220C package and is well-suited for linear power amplifier applications requiring good hFE linearity from 0.5-3A collector currents.

    Original Description:

    Datasheet Transistor

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    This document provides product specifications for the Inchange Semiconductor 2SB596 silicon PNP power transistor. It includes descriptions of the device, its applications in audio power amplifiers from 20-25W, pinout details, absolute maximum ratings, electrical characteristics, and package outline dimensions. The transistor has a TO-220C package and is well-suited for linear power amplifier applications requiring good hFE linearity from 0.5-3A collector currents.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    80 views4 pages

    2SB596

    Uploaded by

    nugroho_budi
    This document provides product specifications for the Inchange Semiconductor 2SB596 silicon PNP power transistor. It includes descriptions of the device, its applications in audio power amplifiers from 20-25W, pinout details, absolute maximum ratings, electrical characteristics, and package outline dimensions. The transistor has a TO-220C package and is well-suited for linear power amplifier applications requiring good hFE linearity from 0.5-3A collector currents.

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    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB596

    DESCRIPTION ・
    ・With TO-220C package
    ・Complement to type 2SD526
    ・Good linearity of hFE

    APPLICATIONS
    ・Power amplifier applications
    ・Recommend for 20～25W high fidelity
    audio frequency amplifier output stage

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base

    导体
    3 Base

    电 半 T O R
    固
    Absolute maximum ratings(Tc=25℃)
    N D UC
    IC O
    E M
    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    GE S
    N
    VCBO Collector-base voltage Open emitter -80 V

    H A
    INC
    VCEO Collector-emitter voltage Open base -80 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -4 A

    IE Emitter current -4 A

    IB Base current -3 A

    PC Collector power dissipation TC=25℃ 30 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB596

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V

    V(BR)EBO Emitter-base breakdown votage IE=-10mA; IC=0 -5 V

    VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A -1.7 V

    VBE Base-emitter on voltage IC=-3A ; VCE=-5V -1.5 V

    ICBO Collector cut-off current VCB=-80V; IE=0 -30 μA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA

    hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 240

    导体
    hFE-2 DC current gain IC=-3A ; VCE=-5V 15

    电 半 T O R
    固 D UC
    fT Transition frequency IC=-0.5A ; VCE=-5V 3 MHz

    IC ON
    E M
    COB Output capacitance IE=0; VCB=-10V;f=1MHz 130 pF

    GE S
    ‹
    H A N
    INC
    hFE-1 classifications

    R O Y

    40-80 70-140 120-240

    2
    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB596

    PACKAGE OUTLINE

    半 导体 O R
    固 电 UC T
    ON D
    E M IC
    GE S
    H A N
    INC Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

    3
    Inchange Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB596

    半 导体 O R
    固 电 UC T
    ON D
    E M IC
    GE S
    H A N
    INC

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