Silicon PNP Darlington Power Transistors

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JMnic Product Specification

Silicon PNP Darlington Power Transistors 2SB1560

DESCRIPTION
・With TO-3PN package
・Complement to type 2SD2390

APPLICATIONS
・Audio ,regulator and general purpose

PINNING

PIN DESCRIPTION

1 Base

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta=℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -160 V

VCEO Collector-emitter voltage Open base -150 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -10 A

IB Base current 1 A

PC Collector power dissipation TC=25℃ 100 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


JMnic Product Specification

Silicon PNP Darlington Power Transistors 2SB1560

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -150 V

VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V

VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA -3.0 V

ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA

IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA

hFE DC current gain IC=-7A ; VCE=-4V 5000

Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF

fT Transition frequency IC=-2A ; VCE=-12V 50 MHz

Switching times

ton Turn-on time 0.8 μs

IC=-7A;RL=10Ω
ts Storage time IB1=- IB2=-7mA 3.0 μs
VCC=-70V

tf Fall time 1.2 μs

‹ hFE Classifications
O P Y

5000-12000 6500-20000 15000-30000

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JMnic Product Specification

Silicon PNP Darlington Power Transistors 2SB1560

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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JMnic Product Specification

Silicon PNP Darlington Power Transistors 2SB1560

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