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    2 SD 1669

    Uploaded by

    Luis Alberto Baca Vaccaro
    This document provides product specifications for the Inchange Semiconductor 2SD1669 silicon NPN power transistor. It has a TO-220F package and is intended for use in applications requiring high current switching such as relay drivers, inverters, and converters. Key specifications include an absolute maximum collector current of 12A, collector-emitter saturation voltage below 0.4V, DC current gain between 70-280, and transition frequency above 10MHz. Switching times are also provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2 SD 1669

    Uploaded by

    Luis Alberto Baca Vaccaro
    72 views3 pages
    This document provides product specifications for the Inchange Semiconductor 2SD1669 silicon NPN power transistor. It has a TO-220F package and is intended for use in applications requiring high current switching such as relay drivers, inverters, and converters. Key specifications include an absolute maximum collector current of 12A, collector-emitter saturation voltage below 0.4V, DC current gain between 70-280, and transition frequency above 10MHz. Switching times are also provided.

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    Transistor b1669

    Original Title

    2sd1669

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    This document provides product specifications for the Inchange Semiconductor 2SD1669 silicon NPN power transistor. It has a TO-220F package and is intended for use in applications requiring high current switching such as relay drivers, inverters, and converters. Key specifications include an absolute maximum collector current of 12A, collector-emitter saturation voltage below 0.4V, DC current gain between 70-280, and transition frequency above 10MHz. Switching times are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    72 views3 pages

    2 SD 1669

    Uploaded by

    Luis Alberto Baca Vaccaro
    This document provides product specifications for the Inchange Semiconductor 2SD1669 silicon NPN power transistor. It has a TO-220F package and is intended for use in applications requiring high current switching such as relay drivers, inverters, and converters. Key specifications include an absolute maximum collector current of 12A, collector-emitter saturation voltage below 0.4V, DC current gain between 70-280, and transition frequency above 10MHz. Switching times are also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD1669

    DESCRIPTION
    ・With TO-220F package
    ・Complement to type 2SB1136
    ・Low collector saturation voltage
    ・Wide safe operating area

    APPLICATIONS
    ・For relay drivers,high-speed inverters,
    converters,and other general high-current
    switching applications

    PINNING

    PIN DESCRIPTION

    1 Base

    2 Collector
    Fig.1 simplified outline (TO-220F) and symbol
    3 Emitter

    T O R
    导体 D UC
    半 N
    固电 IC O
    Absolute maximum ratings (Ta=25℃)
    SYMBOL

    E
    PARAMETER
    S EM CONDITIONS VALUE UNIT

    A NG
    H
    VCBO Collector-base voltage Open emitter 60 V

    VCEO

    VEBO
    INC
    Collector-emitter voltage

    Emitter-base voltage
    Open base

    Open collector
    50

    6
    V

    IC Collector current 12 A

    ICM Collector current-peak 15 A

    Ta=25℃ 2
    PC Collector dissipation W
    TC=25℃ 30

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD1669

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V

    V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V

    V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V

    VCEsat Collector-emitter saturation voltage IC=6A ;IB=0.6A 0.4 V

    ICBO Collector cut-off current VCB=40V ;IE=0 100 μA

    IEBO Emitter cut-off current VEB=4V; IC=0 100 μA

    hFE-1 DC current gain IC=1A ; VCE=2V 70 280

    hFE-2 DC current gain IC=5A ; VCE=2V 30

    TOR
    fT Transition frequency IC=1A ; VCE=5V 10 MHz

    导体 D U C
    半 ON
    固电
    Switching times

    M I C
    E SE
    ton Turn-on time 0.10 μs

    A NG IC=2.0A;IB1=-IB2=0.2A

    H
    ts Storage time 1.20 μs

    INC
    VCC=20V;RL=4Ω

    tf Fall time 0.05 μs

    ‹ hFE-1 Classifications

    Q R S

    70-140 100-200 140-280

    2
    Inchange Semiconductor Product Specification

    Silicon NPN Power Transistors 2SD1669

    PACKAGE OUTLINE

    T O R
    导体 D UC
    半 N
    固电 EM IC O
    E S
    H A NG
    IN C
    Fig.2 Outline dimensions

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