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    2 Sa 1302

    Uploaded by

    Pur Wadi
    This document provides product specifications for the 2SA1302 silicon PNP power transistor. It describes the TO-3PL package, applications for power amplifiers and audio frequency amplifiers, and pin connections. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. It also lists typical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency. Dimension drawings show the outline of the TO-3PL package.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2 Sa 1302

    Uploaded by

    Pur Wadi
    9 views4 pages
    This document provides product specifications for the 2SA1302 silicon PNP power transistor. It describes the TO-3PL package, applications for power amplifiers and audio frequency amplifiers, and pin connections. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. It also lists typical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency. Dimension drawings show the outline of the TO-3PL package.

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    Data transistor

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    2sa1302

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    This document provides product specifications for the 2SA1302 silicon PNP power transistor. It describes the TO-3PL package, applications for power amplifiers and audio frequency amplifiers, and pin connections. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. It also lists typical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency. Dimension drawings show the outline of the TO-3PL package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    9 views4 pages

    2 Sa 1302

    Uploaded by

    Pur Wadi
    This document provides product specifications for the 2SA1302 silicon PNP power transistor. It describes the TO-3PL package, applications for power amplifiers and audio frequency amplifiers, and pin connections. Key specifications include maximum ratings for collector-base voltage, collector-emitter voltage, and collector current. It also lists typical characteristics such as collector-emitter saturation voltage, base-emitter voltage, current gain, and transition frequency. Dimension drawings show the outline of the TO-3PL package.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 4

    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1302

    DESCRIPTION
    ・With TO-3PL package
    ・Complement to type 2SC3281

    APPLICATIONS
    ・Power amplifier applications
    ・Recommended for 100W high fidelity audio
    frequency amplifier output stage

    PINNING

    PIN DESCRIPTION

    1 Emitter

    Collector;connected to
    2
    mounting base
    Fig.1 simplified outline (TO-3PL) and symbol
    3 Base

    Absolute maximum ratings(Ta=25℃)


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -200 V

    VCEO Collector-emitter voltage Open base -200 V

    VEBO Emitter-base voltage Open collector -5 V

    IC Collector current -15 A

    IB Base current -1.5 A

    PC Collector power dissipation TC=25℃ 150 W

    Tj Junction temperature 150 ℃

    Tstg Storage temperature -55~150 ℃


    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1302

    CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V

    VCEsat Collector-emitter saturation voltage IC=-8A; IB=-0.8A -2.5 V

    VBE Base-emitter voltage IC=-8A ; VCE=-5V -1.5 V

    ICBO Collector cut-off current VCB=-200V; IE=0 -5 μA

    IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA

    hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160

    hFE-2 DC current gain IC=-8A ; VCE=-5V 35

    fT Transition frequency IC=-1A ; VCE=-5V 25 MHz

    COB Collector output capacitance IE=0;f=1MHz;VCB=-10V 470 pF

    ‹ hFE-1 classifications

    R O

    55-110 80-160

    2
    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1302

    PACKAGE OUTLINE

    Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

    3
    JMnic Product Specification

    Silicon PNP Power Transistors 2SA1302

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