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    Resistor Models in The Cadence Spectre: 1: Two Terminal Resistor (Resistor)

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    Manikanta Reddy Manu
    There are 3 resistor models in Cadence Spectre: 1) Two Terminal Resistor (resistor) which is the most commonly used simple resistor model, 2) Physical Resistor (phy_res) which models a resistor consisting of a linear resistor and two diodes, and 3) Diffusion Resistor Model (rdiff) which accurately models temperature, bias, and back-bias dependencies of diffusion resistors like NWell, N+, and P+. Each model has its own parameters and equations to calculate resistance, capacitance, noise, and temperature and bias dependencies.

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    Resistor Models in The Cadence Spectre: 1: Two Terminal Resistor (Resistor)

    Uploaded by

    Manikanta Reddy Manu
    738 views8 pages
    There are 3 resistor models in Cadence Spectre: 1) Two Terminal Resistor (resistor) which is the most commonly used simple resistor model, 2) Physical Resistor (phy_res) which models a resistor consisting of a linear resistor and two diodes, and 3) Diffusion Resistor Model (rdiff) which accurately models temperature, bias, and back-bias dependencies of diffusion resistors like NWell, N+, and P+. Each model has its own parameters and equations to calculate resistance, capacitance, noise, and temperature and bias dependencies.

    Original Description:

    RESISTOR MODELS OF CADENCE SPECTRE

    Original Title

    Resistor Models

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    © © All Rights Reserved

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    There are 3 resistor models in Cadence Spectre: 1) Two Terminal Resistor (resistor) which is the most commonly used simple resistor model, 2) Physical Resistor (phy_res) which models a resistor consisting of a linear resistor and two diodes, and 3) Diffusion Resistor Model (rdiff) which accurately models temperature, bias, and back-bias dependencies of diffusion resistors like NWell, N+, and P+. Each model has its own parameters and equations to calculate resistance, capacitance, noise, and temperature and bias dependencies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    738 views8 pages

    Resistor Models in The Cadence Spectre: 1: Two Terminal Resistor (Resistor)

    Uploaded by

    Manikanta Reddy Manu
    There are 3 resistor models in Cadence Spectre: 1) Two Terminal Resistor (resistor) which is the most commonly used simple resistor model, 2) Physical Resistor (phy_res) which models a resistor consisting of a linear resistor and two diodes, and 3) Diffusion Resistor Model (rdiff) which accurately models temperature, bias, and back-bias dependencies of diffusion resistors like NWell, N+, and P+. Each model has its own parameters and equations to calculate resistance, capacitance, noise, and temperature and bias dependencies.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

    Resistor models in the Cadence Spectre

    There are 3 resistor models in the Cadence Spectre simulator, they are:

    Two Terminal Resistor (resistor)

    Physical Resistor (phy_res)

    Diffusion Resistor Model (rdiff)

    The following information is derived from these sources:


    1: "Affirma Spectre Circuit Simulator Reference", pp 386-393, 404-406, 410-414,
    Product Version 4.4.6, June 2000. 1999 Cadence Design Systems, Inc. All rights
    reserved. Printed in the United States of America. Cadence Design Systems, Inc.
    2: "Affirma Spectre Circuit Simulator Device Model Equations", pp223-226, Product
    Version 4.4.6, February 2001 2001 Cadence Design Systems, Inc. All rights reserved.
    Printed in the United States of America. Cadence Design Systems, Inc.
    3: "HSPICE/SPICE Interface & SPICE 2G6 Reference Manual", pp47-48, Product
    Version 4.4.6, October 2001. 1990-2001 Cadence Design Systems, Inc. All rights
    reserved. Printed in the United States of America. Cadence Design Systems, Inc.

    1: Two Terminal Resistor (resistor)


    Description
    It is the normally used resistor model in Spectre. Such a component can be stated in the
    following two ways:
    without model:
    r1 (1 2) resistor r=1.2K m=2

    with model:
    r1 (1 2) resmod l=8u w=1u

    where, parameters r and m in the first statement, l and w in the second statement are
    called as instance parameters.
    If the instance value R(inst) is not given, use the default resistance R(model) in the
    model definition. If R(model) is not given too, the R(inst) can be calculated by:
    R(inst) = Rsh * L / (W - 2 * etch)
    The nonlinearity of resistor is calculated by:
    R(V) = R(inst) / (1 + c1 * V + c2 * V ^ 2 + ...).

    where ck is the kth entry in the coefficient vector.


    The value of the resistor as a function of the temperature is given by:
    R(T) = R(tnom) * [1 + tc1 * (T - tnom) + tc2 * (T - tnom)^2]
    where
    T = trise(inst) + temp or T = trise(model) + temp

    Sample Model Statement


    model resmod resistor rsh=150 l=2u w=2u etch=0.05u tc1=0.1 tnom=27 kf=1

    where, rsh, l, w and etc are called as model parameters.

    Instance parameters
    r ( W)
    l (m)
    w (m)
    m=1
    scale=1
    Resform

    tc1=0 1/C
    -2
    tc2=0 C
    trise (C)
    isnoisy=yes

    Resistance.
    Resistor length.
    Resistor width.
    Multiplicity factor.
    Scale factor.
    Use the resistance form for this instance.
    Default is yes if r<thresh. Possible values
    are no or yes.
    Linear temperature coefficient.
    Quadratic temperature coefficient.
    Temperature rise from ambient.
    Should resistor generate noise. Possible
    values are no or yes.

    Model parameters
    Resistance parameters
    r= W
    rsh= W/sqr
    thresh=1.0e-3 W,
    Resistor Size Parameters
    l= m
    w=1e-6 m
    etch=0 m
    etchl=0 m
    scaler=1
    Temperature Effects Parameters
    tc1=0 1/C
    -2
    tc2=0 C
    tnom (C)
    trise=0 C
    Nonlinearity Coefficients
    coeffs=[...]

    Default resistance.
    Sheet resistance.
    Resistances smaller than this will use the
    resistance form as opposed to the standard
    conductance form.
    Default resistor length.
    Default resistor width.
    Width narrowing due to etching per side.
    Length narrowing due to etching per side.
    Resistance scaling factor.
    Linear temperature coefficient.
    Quadratic temperature coefficient.
    Parameters measurement temperature. Default
    set by options.
    Default temperature rise from ambient.
    Vector of polynomial conductance coefficients.

    Noise Model Parameters


    kf=0
    af=2

    Flicker (1/f) noise coefficient.


    Flicker (1/f) noise exponent.

    Note: some parameters have the same name in statements and model definitions. If both of them
    are given, the values appear at the instance statements have the priority.

    2: Physical Resistor (phy_res)


    Description
    A physical resistor consists of a linear resistor (tied between t1 and t2) and two diodes
    (tied between t1-t0 and t2-t0). It is shown in the following figure. The diodes are junction
    diodes. Under normal operation, the two diodes are reverse biased, but the parameter
    subtype can reverse the direction of the diodes. If you do not specify t0, ground is
    assumed. The instance parameters always override model parameters. If you do not
    specify the instance resistance value, it is calculated from the model parameters.

    subtype = n

    subtype = p

    Thermal noise =

    Flicker noise =

    4kT
    R
    KF ( Ir AF )
    f

    A
    Hz

    A
    Hz

    If R(inst) is not given and R(model) is given


    R(inst) = R(model)
    Otherwise,
    R(inst) = Rsh * (L - 2 * etchl) / (W - 2 * etch)

    subtype = poly

    If the polynomial coefficients vector (coeffs=[c1 c2 ...]) is specified, the nonlinear


    resistance is
    R(V) = R(inst) / (1 + c1 * V + c2 * V2 + ...)
    where
    V = V(t1) - V(t2)
    Here V is the controlling voltage across the resistor. It is also the controlling voltage
    when the model parameter polyarg is set to diff. In this form, the physical resistor is
    symmetric with respect to V(t1) and V(t2). The branch current as a function of the applied
    voltage is given by
    I(V) = (V / R(inst)) * (1 + 1/2 * c1 * V + 1/3 * c2 * V2 + ...)
    where ck is the kth entry in the coefficient vector.
    If the model parameter polyarg is set to sum, the controlling voltage is defined as
    Vsum = ( (V(t1) - V(t0)) + (V(t2) - V(t0)) )/2
    Here, Vsum is the controlling voltage between the resistor and the substrate, t0. In this
    case, the device becomes asymmetric with respect to V(t1) and V(t2). The branch
    current as a function of the applied voltage for this case is given by
    I(V) = (V / R(inst)) * (1 + c1 * Vsum + c2 * Vsum2 + ...)
    The large-signal conductance is given by
    G(V) = (1 + c1 * Vsum + c2 * Vsum2 + ...) / R(inst)
    The resistance as a function of temperature is given by
    R(T) = R(tnom) * [1 + tc1 * (T - tnom) + tc2 * (T - tnom)2]
    where
    T = trise(inst) + temp
    if trise(inst) is not given
    T = trise(model) + temp
    If you do not specify the junction leakage current (is) and js is specified, the leakage
    current is calculated from js and the device dimensions.
    is = js * 0.5 * (L - 2 * etchl) * (W - 2 * etch)
    If you specify the instance capacitance or the linear model capacitance, linear capacitors
    are used between t1-t0 and t2-t0. Otherwise, nonlinear junction capacitors are used and
    the zerobias capacitance values are calculated from the model parameters.
    If C(inst) is not given and C(model) is given,
    C(inst) = C(model)
    Otherwise,

    C(inst) = 0.5*Cj *(L -2*etchlc)*(W -2*etchc)+Cjsw*(W+L-2*etchc-2*etchlc)


    If the capacitance is nonlinear, the temperature model for the junction capacitance is
    used. Otherwise, the following equation is used.
    C(T) = C(tnom) * [1 + tc1c * (T - tnom) + tc2c * (T - tnom)2].

    Sample Instance Statement


    res1 (net9 vcc) resphy l=1e-3 w=2e-6

    Sample Model Statement


    model resphy phy_res rsh=85 tc1=1.53e-3 tc2=4.67e-7 etch=0 cj=1.33e-3
    cjsw=3.15e-10 tc1c=9.26e-4

    Instance Parameters
    r ( W)
    c (F)
    l (m)
    w (m)
    region=normal
    tc1=0 1/C
    -2
    tc2=0 C
    tc1c=0 1/C
    tc2c=0 C

    -2

    trise (C)
    m=1

    Resistance.
    Linear capacitance.
    Line length.
    Line width.
    Estimated operating region. Possible values
    are normal or breakdown.
    Linear temperature coefficient of resistor.
    Quadratic temperature coefficient of resistor.
    Linear temperature coefficient of linear
    capacitor.
    Quadratic temperature coefficient of linear
    capacitor.
    Temperature rise from ambient.
    Multiplicity factor.

    Model Parameters
    Substrate Type Parameters
    subtype=p
    Resistance Parameters
    r=(W), Default resistance.
    rsh=(W)/sqr
    minr=0.1(W),Minimum resistance.
    coeffs=[...]
    polyarg=diff
    Temperature Effects Parameters
    tc1=0 1/C
    -2
    tc2=0 C
    -2
    tc1c=0 C
    tc2c=0 C
    tnom (C)

    -2

    Substrate type. Possible values are n p or


    poly.

    Sheet resistance.
    Vector of polynomial conductance coefficients.
    Polynomial model argument type. Possible
    values are sum or diff.
    Linear temperature coefficient of resistor.
    Quadratic temperature coefficient of resistor.
    Linear temperature coefficient of linear
    capacitor.
    Quadratic temperature coefficient of linear
    capacitor.
    Parameters measurement temperature. Default

    trise=0 C
    Junction Diode Model Parameters
    is (A)
    2
    js=0 A/m
    n=1
    eg=1.11 V
    xti=3
    imelt=`imaxA'
    jmelt=`jmeltA/m'

    imax=1 A
    jmax=1e8 A/m

    dskip=yes

    bvj= V
    Junction Capacitance Model Parameters
    c=0 F
    cj=0 F/m2
    cjsw=0 F/m
    mj=1/2
    mjsw=1/3
    pb=0.8 V
    pbsw=0.8 V
    fc=0.5
    fcsw=0.5
    tt=0 s
    Device Size Parameters
    l= m
    w=1e-6 m
    etch=0 m
    etchl=0 m
    etchc=etch m
    etchlc=etchl m
    scaler=1
    scalec=1
    Noise Model Parameters
    kf=0
    af=1

    set by options.
    Temperature rise from ambient.
    Saturation current.
    Saturation current density.
    Emission coefficient.
    Band gap.
    Saturation current temperature exponent.
    Explosion current. diode is linearized beyond
    this current to aid convergence.
    Explosion current density. diode is linearized
    beyond this current to aid convergence.
    Maximum current. currents above this limit
    generate a warning.
    Maximum current density. currents above this
    limit generate a warning.
    Use simple piece-wise linear model for diode
    currents below 0.1*iabstol. Possible values
    are no or yes.
    Junction reverse breakdown voltage.
    Default linear capacitance.
    Zero-bias junction bottom capacitance density.
    Zero-bias
    junction
    sidewall
    capacitance
    density.
    Junction bottom grading coefficient.
    Junction sidewall grading coefficient.
    Junction bottom built-in potential.
    Junction sidewall built-in potential.
    Junction
    bottom
    capacitor
    forward-bias
    threshold.
    Junction sidewall capacitor forward-bias
    threshold.
    Transit time.
    Default line length.
    Default line width.
    Narrowing due to etching.
    Length reduction due to etching.
    Narrowing due to etching for capacitances.
    Length reduction due to etching
    capacitances.
    Resistance scaling factor.
    Capacitance scaling factor.
    Flicker (1/f) noise coefficient.
    Flicker (1/f) noise exponent.

    3: Diffusion Resistor Model (rdiff)


    Description

    for

    The rdiff model is a diffusion resistor model, which accurately models the
    temperature, applied bias and back-bias dependencies of NWell, N+, and P+ resistors. It
    is described in the paper MODEL FOR DIFFUSION RESISTORS (NWell, N+, P+) USED
    IN CMOS IC DESIGNS by M.J.B.Bolt, FASELEC Process Development Group, PDG93029, Modified 3rd May 1995.
    Sample Instance Statement
    r2 (1 2 0) rdsn l=9u w=2u nb=0 m=1
    Sample Model Statement
    model rdsn rdiff level=1 tr=27 dta=0 rshr=2.5e3 wtol=0.22u
    rint=3.5u swvp=13.4u power=2 tcr1=1.5e-3 tcr2=1e-5 vpr=40
    Instance Parameters
    l=1.0 scale m
    w=1.0 scale m
    nb=0.0
    m=1.0

    Drawn length of resistor. Must be greater than


    zero. Scale set by option scale.
    Drawn width of resistor. Must be greater than
    zero. Scale set by option scale.
    Number of bends in the resistor. Must be
    greater than or equal to zero.
    Multiplicity factor. Must be greater than zero.

    Model Parameters
    level=1.0
    tr (C)
    tref (C)
    tnom (C)
    dta=0 K
    trise=0 K
    rshr=1.0e+3 W/sqr
    wtol=0.0 m
    tcr1=0.0 1/K
    tcr2=0.0 1/K2
    vpr=100.0 V
    swvp=0.0 V/m
    power=1.5
    vdr=1.0 V
    rint=0.0 . m
    tcrint1=0.0 1/K

    Level of this model. Must be 1.


    Reference temperature. Default set by option
    tnom.
    Alias of tr. Default set by option tnom.
    Alias of tr. Default set by option tnom.
    Temperature offset of the device.
    Alias of dta.
    Sheet resistance at reference temperature.
    Must be greater than zero.
    Offset between the drawn and effective resistor
    width.
    Linear temperature coefficient of the resistor.
    Quadratic temperature coefficient of the
    resistor.
    Reference Pinch-off voltage.
    Coefficient of the width dependence of vp.
    Voltage exponent. Must be greater than zero.
    Diffusion voltage at reference temperature.
    Interface resistance at reference temperature.
    Linear temperature coefficient of the interface
    resistor.

    4: SPICE resistor model in Cadence


    Cadence also has an interface with SPICE simulator. The resistor model of the SPICE
    simulator in Cadence is a simple one as listed below.

    General form
    RXXXXXXX N1 N2 VALUE <TC=TC1,<TC2>>
    N1 and N2 are the two element nodes. VALUE is the resistance (in ohms) and may be
    positive or negative but not zero. TC1 and TC2 are the (optional) temperature
    coefficients; if not specified, zero is assumed for both. The value of the resistor as a
    function of temperature is given by:
    value(TEMP)=value(TNOM)*(1+TC1*(TEMP-TNOM)+TC2*(TEMP-TNOM)**2))
    Examples
    R1 1 2 100
    RC1 12 17 1K TC=0.001,0.015

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