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    Introduction To Etching and Back-End Technology: BY K.Manikantta Reddy 14ECE2005

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    Manikanta Reddy Manu
    Etching is used to remove unwanted parts of a layer from a wafer. There are two main types of etching: isotropic, which removes material equally in all directions, and anisotropic, which removes material selectively in one direction. Etching can be wet or dry, with plasma and ion beam etching being dry methods. Metallization is used to form contacts and interconnects on chips using materials like aluminum and copper deposited through techniques such as evaporation and sputtering. Isolation methods are used to electrically isolate devices on chips and include junction isolation, mesa isolation, LOCOS, and trench isolation. Packaging protects and connects chips to be used in electronic devices.

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    Introduction To Etching and Back-End Technology: BY K.Manikantta Reddy 14ECE2005

    Uploaded by

    Manikanta Reddy Manu
    32 views10 pages
    Etching is used to remove unwanted parts of a layer from a wafer. There are two main types of etching: isotropic, which removes material equally in all directions, and anisotropic, which removes material selectively in one direction. Etching can be wet or dry, with plasma and ion beam etching being dry methods. Metallization is used to form contacts and interconnects on chips using materials like aluminum and copper deposited through techniques such as evaporation and sputtering. Isolation methods are used to electrically isolate devices on chips and include junction isolation, mesa isolation, LOCOS, and trench isolation. Packaging protects and connects chips to be used in electronic devices.

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    VLSI technology

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    Etching is used to remove unwanted parts of a layer from a wafer. There are two main types of etching: isotropic, which removes material equally in all directions, and anisotropic, which removes material selectively in one direction. Etching can be wet or dry, with plasma and ion beam etching being dry methods. Metallization is used to form contacts and interconnects on chips using materials like aluminum and copper deposited through techniques such as evaporation and sputtering. Isolation methods are used to electrically isolate devices on chips and include junction isolation, mesa isolation, LOCOS, and trench isolation. Packaging protects and connects chips to be used in electronic devices.

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    © All Rights Reserved
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    Download as pptx, pdf, or txt
    32 views10 pages

    Introduction To Etching and Back-End Technology: BY K.Manikantta Reddy 14ECE2005

    Uploaded by

    Manikanta Reddy Manu
    Etching is used to remove unwanted parts of a layer from a wafer. There are two main types of etching: isotropic, which removes material equally in all directions, and anisotropic, which removes material selectively in one direction. Etching can be wet or dry, with plasma and ion beam etching being dry methods. Metallization is used to form contacts and interconnects on chips using materials like aluminum and copper deposited through techniques such as evaporation and sputtering. Isolation methods are used to electrically isolate devices on chips and include junction isolation, mesa isolation, LOCOS, and trench isolation. Packaging protects and connects chips to be used in electronic devices.

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    You are on page 1of 10

    Introduction to

    Etching and Back-end


    Technology
    BY
    K.MANIKANTTA REDDY
    14ECE2005
    1

    ETCHING
    Removing unwanted parts of a layer from the wafer.

    Highly selective

    Perfectly anisotropic

    Poorly selective

    Isotropic

    ETCHING
    Etching
    Wet Reactive
    Dry
    Isotropic
    Anisotropic
    Plasma
    Ion
    milling
    Highion
    Pressure
    density
    etching

    Liftoff
    Etching of materials used in VLSI
    Etching induced damage and Cleaning

    References:
    Video lecture no.15, 17 : VLSI Technology by
    Santhiram Kal.
    Video lecture no.25, 26, 27, 28 : VLSI Technology by
    Nanditadas Gupta
    Chapter 11, Etching : Micro electronic fabrication by
    Campbell
    Chapter 9, Etching and Cleaning : VLSI fabrication
    principles by Gandhi

    METALLIZATION
    Materials for contacts and interconnects
    Different types of contacts : i. Schottky
    ii. Implanted ohmic
    iii. Alloyed
    Metallization techniques : a. Evaporation
    i. Filament
    ii. Flash
    iii. Electron beam
    b. Sputtering
    Metallization problems and failure mechanisms
    Silicides and copper metallization

    References:
    Video lecture no. 34-38 : VLSI Technology by Santhiram Kal
    Video lecture no. 30,31 : VLSI technology by Nanditadas Gupta

    Chapter 15, Metallization : Microelectronic fabrication by Campb

    Chapter 11, Device and circuit fabrication : VLSI fabrication princ


    Chapter 8, Deposited films

    by Gandhi

    ISOLATION
    Different types of Isolation methods : i. Junction Isolation
    ii. Mesa Isolation
    iii. Oxide Isolation
    iv. LOCOS methods
    v. Trench Isolation
    Planarization or Chemical mechanical Polishing

    References:
    Video lecture no. 39,40 : VLSI Technology by Santhiram
    Kal
    Video lecture no. 32,33 : VLSI technology by Nanditadas
    Gupta
    Chapter 15, Device Isolation : Microelectronic fabrication
    by Campbell
    Chapter 11, Device and circuit fabrication : VLSI
    fabrication principles
    by Gandhi
    Planarization : Wiki pedia

    PACKAGING
    References:
    Video lecture no. 46,47 : VLSI technology by
    Santhiram kal
    Integrated circuit packaging : Wiki pedia

    Thank You

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