Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook Pcs

TPC8401
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (UMOSII)
TPC8401
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PCs
Unit: mm
Low drainsource ON resistance

: P Channel RDS (ON) = 27 m (typ.)
N Channel RDS (ON) = 14 m (typ.)
High forward transfer admittance
: P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 8 S (typ.)
Low leakage current
: P Channel IDSS = 10 A (VDS = 30 V)
N Channel IDSS = 10 A (VDS = 30 V)
Enhancementmode
: P Channel Vth = 0.8~ 2.0 V (VDS = 10 V, ID = 1mA)
N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)
Maximum Ratings (Ta = 25C)

Characteristics
Symbol
Rating
P Channel N Channel
Unit
Drain-source voltage
VDSS
30
30
Drain-gate voltage (RGS = 20 k)
VDGR
30
30
Gate-source voltage
VGSS
20
20
Drain current
DC
(Note 1)
ID
4.5
Pulse
(Note 1)
IDP
18
24
PD (1)
1.5
1.5
PD (2)
1.0
1.0
PD (1)
0.75
0.75
PD (2)
0.45
0.45
Drain power Single-device operation

(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
JEDEC
JEITA
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)

A
Circuit Configuration
W
26.3
(Note 4a)
46.8
(Note 4b)
Single pulse avalanche energy
EAS
Avalanche current
IAR
Repetitive avalanche energy

Single-device value at operation
(Note 2a, 3b, 5)
EAR
0.10
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
55~150
4.5
mJ
A
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
2002-05-17
TPC8401
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient

(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient

(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Symbol
Max
Rth (ch-a) (1)
83.3
Rth (ch-a) (2)
125
Unit
C/W
Rth (ch-a) (1)
167
Rth (ch-a) (2)
278
Marking
TPC8401
Type
Note 1: Please use devices on condition that the channel temperature is below 150C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 25.4 0.8
(unit: mm)
FR-4
25.4 25.4 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4:
a) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 4.5 A
b) VDD = 24 V, Tch = 25C (Initial), L = 1.0 mH, RG = 25 , IAR = 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: on lower left of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2002-05-17
TPC8401
P-ch
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 16 V, VDS = 0 V
10
Drain cutOFF current
IDSS
VDS = 30 V, VGS = 0 V
10
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V (BR) DSX
ID = 10 mA, VGS = 20 V
15
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
RDS (ON)
VGS = 4 V, ID = 2.2 A
51
65
RDS (ON)
VGS = 10 V, ID = 2.2 A
25
35
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.2 A
3.5
Input capacitance
Ciss
970
Reverse transfer capacitance
Crss
180
Output capacitance
Coss
370
tr
17
ton
20
tf
75
toff
160
Qg
28
12
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Rise time
TurnON time
VDS = 10 V, VGS = 0 V, f = 1 MHz
V
V
m
S
pF
ns
Switching time
Fall time
TurnOFF time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge 1
Qgs1
Gatedrain (miller) charge
Qgd
VDD 24 V, VGS = 10 V, ID = 4.5 A
nC
SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
18
1.2
VDSF
IDR = 4.5 A, VGS = 0 V
2002-05-17
TPC8401
N-ch
Electrical Characteristics (Ta = 25C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 16 V, VDS = 0 V
10
Drain cutOFF current
IDSS
VDS = 30 V, VGS = 0 V
10
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V (BR) DSX
ID = 10 mA, VGS = 20 V
15
VDS = 10 V, ID = 1 mA
0.8
2.5
RDS (ON)
VGS = 4 V, ID = 3 A
21
32
RDS (ON)
VGS = 10 V, ID = 3 A
14
21
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
Input capacitance
Ciss
1700
260
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Vth
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
Output capacitance
Coss
380
tr
10
ton
20
Rise time
TurnON time
V
V
m
S
pF
ns
Switching time
Fall time
TurnOFF time
Total gate charge (Gatesource
plus gatedrain)
tf
35
toff
120
Qg
40
28
12
Gatesource charge 1
Qgs1
Gatedrain (miller) charge
Qgd
VDD 24 V, VGS = 10 V, ID = 6 A
nC
SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
24
1.2
VDSF
IDR = 6 A, VGS = 0 V
2002-05-17
TPC8401
P-ch
DRAIN POWER DISSIPATION PD
(W)
PD Ta
2.0
1.5
(1)
(2)
1.0
(3)
0.5
0
0
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

(NOTE 2a)
(1) SINGLE-DEVICE OPERATION (NOTE 3a)
(2) SINGLE-DEVICE VALUE AT DUAL OPERATION
(NOTE 3b)
DEVICE MOUNTED ON A GLASS-EPOXY
BOARD (b)
(NOTE 2b)
(3) SINGLE-DEVICE OPERATION
(NOTE 3a)
(4) SINGLE-DEVICE VALUE AT DUAL
OPERATION
(NOTE 3b)
t = 10 s
(4)
50
100
150
200
AMBIENT TEMPERATURE Ta (C)
2002-05-17
TPC8401
P-ch
(W)
PD Ta
2.0
1.5
(1)
(2)
1.0
(3)
0.5
0
0

(NOTE 2a)
(NOTE 3a)
(NOTE 3b)
BOARD (b)
(NOTE 2b)
(NOTE 3a)
OPERATION
(NOTE 3b)
t = 10 s
(4)
50
100
150
200
2002-05-17
TPC8401
P-ch
2002-05-17
TPC8401
N-ch
2002-05-17
TPC8401
N-ch
(W)
PD Ta
2.0
1.5
(1)
(2)
1.0
(3)
0.5
0
0

(NOTE 2a)
(NOTE 3a)
(NOTE 3b)
BOARD (b)
(NOTE 2b)
(NOTE 3a)
OPERATION
(NOTE 3b)
t = 10 s
(4)
50
100
150
200
2002-05-17
TPC8401
N-ch
10
2002-05-17
TPC8401
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
11
2002-05-17

Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook Pcs

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TPC8401

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (UMOSII)

Low drainsource ON resistance

Maximum Ratings (Ta = 25C)

Drain-gate voltage (RGS = 20 k)

Drain power Single-device operation

Weight: 0.080 g (typ.)

Single pulse avalanche energy

Repetitive avalanche energy

Storage temperature range

Thermal resistance, channel to ambient

Thermal resistance, channel to ambient

Rth (ch-a) (1)

Rth (ch-a) (2)

Rth (ch-a) (2)

b) Device mounted on a glass-epoxy board (b)

Gate leakage current

Drain cutOFF current

Forward transfer admittance

Reverse transfer capacitance

VDS = 10 V, VGS = 0 V, f = 1 MHz

Gatedrain (miller) charge

VDD 24 V, VGS = 10 V, ID = 4.5 A

SourceDrain Ratings and Characteristics (Ta = 25C)

Forward voltage (diode)

IDR = 4.5 A, VGS = 0 V

Gate leakage current

Drain cutOFF current

Forward transfer admittance

VDS = 10 V, VGS = 0 V, f = 1 MHz

Reverse transfer capacitance

Gatedrain (miller) charge

SourceDrain Ratings and Characteristics (Ta = 25C)

Forward voltage (diode)

DRAIN POWER DISSIPATION PD

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

AMBIENT TEMPERATURE Ta (C)

DRAIN POWER DISSIPATION PD

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

AMBIENT TEMPERATURE Ta (C)

DRAIN POWER DISSIPATION PD

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a)

AMBIENT TEMPERATURE Ta (C)

RESTRICTIONS ON PRODUCT USE

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