Week 2 Thyristors

THYRISTORS
THYRISTOR
• A thyristor is a four-layer device with alternating P-type and N-type
semiconductors (P-N-P-N).
• In its most basic form, a thyristor has three terminals: anode (positive
terminal), cathode (negative terminal), and gate (control terminal). The
gate controls the flow of current between the anode and cathode.
• The primary function of a thyristor is to control electric power and current
by acting as a switch. For such a small and lightweight component, it
offers adequate protection to circuits with large voltages and currents (up
to 6000 V, 4500 A).
THYRISTOR
• The device acts as a switch and remains off until the forward voltage reaches
a certain value; then it turns on and conducts. Conduction continues until the
current is reduced below a specified value
THYRISTOR
SHOCKLEY DIODE
• The 4-layer diode (also known
as Shockley diode and SUS) is
a type of thyristor, which is a
class of devices constructed of
four semiconductor layers.
SHOCKLEY DIODE
• Holding Current Once the 4-layer
diode is conducting (in the on
state), it will continue to conduct
until the anode current is reduced
below a specified level, called the
holding current, IH
• Switching Current The value of

the anode current at the point
where the device switches from the
forward-blocking region (off) to
the forward-conduction region
(on) is called the switching
current, IS. This value of current is
always less than the holding
current, IH
• Working principle and application
• https://youtu.be/oJ8DCgYBXpA
• Shockley Diode Working Principle - Inst Tools (
instrumentationtools.com)
SHOCKLEY
DIODE
SILICON CONTROLLED RECTIFIER (SCR)
• Like the 4-layer diode, the SCR has two possible states of operation. In the
off state, it acts ideally as an open circuit between the anode and the cathode;
actually, rather than an open, there is a very high resistance.
• In the on state, the SCR acts ideally as a short from the anode to the cathode;
actually, there is a small on (forward) resistance.
• The LASCR operates as an SCR except it is triggered by light
SILICON CONTROLLED
RECTIFIER (SCR)
• Four layer device
• 3 junction
• 3 terminal
*If pulse is applied at the gate IG : Q2 is on providing current at base of Q1, thus providing current at collector of Q1, back to base of Q2
*This will be a regenerative process, so device “latches” and stays ON
*Gate controls VBF
TURNING THE SCR ON

TURNING THE SCR OFF
• When the gate returns to 0 V after the trigger pulse is removed, the SCR
cannot turn off; it stays in the forward-conduction region.
• The anode current must drop below the value of the holding current, in order
for turn-off to occur
• There are two basic methods for turning off an SCR:

• anode current interruption
• forced commutation.
ANODE CURRENT INTERRUPTION
• The anode current can be interrupted by either a

momentary series or parallel switching
arrangement, as shown
• The series switch in part (a) simply reduces the
anode current to zero and causes the SCR to turn
off. The parallel switch in part (b) routes part of
the total current away from the SCR, thereby
reducing the anode current to a value less than IH
FORCE COMMUTATION
• This method basically requires momentarily forcing
current through the SCR in the direction opposite to the
forward conduction so that the net forward current is
reduced below the holding value.
• While the SCR is conducting, the switch is open and is
charged to the supply voltage through , as shown in part
(a).
• To turn off the SCR, the switch is closed, placing the
capacitor across the SCR and forcing current through it
opposite to the forward current, as shown in part (b).
• Typically, turn-off times for SCRs range from a few
microseconds up to about 30 microseconds
• https://youtu.be/9h7_vDUE908
• https://youtu.be/VzkBCG3iUpk
• Turning off SCR
• https://youtu.be/0cuCHQSgdKo
SCR
SCR CHARACTERISTICS AND RATINGS
• Forward-breakover voltage, This is the voltage at which the SCR enters the
forward-conduction region. The value of is maximum when and is designated
When the gate current in increased, decreases and is designated and so on,
for increasing steps in gate current and so on).
• Holding current, This is the value of anode current below which the SCR
switches from the forward-conduction region to the forward-blocking region.
The value increases with decreasing values of and is maximum for IG IG = 0
• Gate trigger current, This is the value of gate current necessary to switch
the SCR from the forward-blocking region to the forward-conduction region
under specified conditions.
• Average forward current, This is the maximum continuous anode current
(dc) that the device can withstand in the conduction state under specified
conditions
• Forward-conduction region This region corresponds to the on condition of
the SCR where there is forward current from cathode to anode through the
very low resistance (approximate short) of the SCR.
• Forward-blocking and reverse-blocking regions These regions correspond
to the off condition of the SCR where the forward current from cathode to
anode is blocked by the effective open circuit of the SCR
• Reverse-breakdown voltage, This parameter specifies the value of reverse
voltage from cathode to anode at which the device breaks into the avalanche
region and begins to conduct heavily (the same as in a pn junction diode).
THE LIGHT-ACTIVATED SCR (LASCR)
• The light-activated silicon-controlled rectifier (LASCR) is a four-layer
semiconductor device (thyristor) that operates essentially as does the conventional
SCR except that it can also be light-triggered
• LASCR conducts current in one direction when activated by a sufficient amount of
light and continues to conduct until the current falls below a specified value
• The LASCR is most sensitive to light when the gate terminal is open. If necessary,
a resistor from the gate to the cathode can be used to reduce the sensitivity
• https://youtu.be/cBHPtZ5bDSM
LASCR
SAMPLE PROBLEMS
Determine the gate trigger current and the anode current when the switch, SW1, is momentarily
closed. Assume VAK = 0.2 V and VGK = 0.7 V
DIAC AND TRIAC
• Both the diac and the triac are types of thyristors that can conduct current in both
directions (bilateral).
• The difference between the two devices is that a diac has two terminals, while a triac has
a third terminal, which is the gate for triggering.
• The diac functions basically like two parallel 4-layer diodes turned in opposite
directions.
• The triac functions basically like two parallel SCRs turned in opposite directions with a
common gate terminal.
DIAC
• A diac is a two-terminal four-layer

semiconductor device (thyristor) that can conduct
current in either direction when activated.
• Notice that there are two terminals, labelled A1

and A2.
• The top and bottom layers contain both n and p

materials.
• The right side of the stack can be regarded as a
pnpn structure with the same characteristics as a
four-layer diode
• The left side is an inverted four-layer diode
having an npnp structure.
DIAC
FB RB RB FB
DIAC
TRIAC
• A triac is like a diac with a gate terminal.
• A triac can be turned on by a pulse of gate current and does not
require the breakover voltage to initiate conduction, as does
the diac.
• Basically, a triac can be thought of simply as two SCRs
connected in parallel and in opposite directions with a common
gate terminal.
• Unlike the SCR, the triac can conduct current in either
direction when it is triggered on, depending on the polarity of
the voltage across its and A terminals.
TRIAC
• https://youtu.be/R3C69On9RVI
• https://youtu.be/rIMexAWE6Cc
DIAC AND
TRIAC
SILICON-CONTROLLED SWITCH (SCS)
• The silicon-controlled switch (SCS) is similar in construction to the SCR.

• The SCS, however, has two gate terminals, the cathode gate and the anode
gate.
• The SCS can be turned on and off using either gate terminal. Remember that
the SCR can be only turned on using its gate terminal.
• Normally, the SCS is available in power ratings lower than those of the SCR.
SILICON
CONTROLLED
SWITCH
• An SCS (silicon-controlled switch) is a
four-terminal thyristor that has two
gate terminals that are used to trigger
the device on and off.
SILICON
CONTROLLED
SWITCH
• The SCS can also be turned on with a negative
pulse on the anode gate, as indicated in Figure (a).
This drives Q1 into conduction which, in turn,
provides base current for Q2. Once is on, it
provides a path for Q1 base current, thus sustaining
the on state.
• To turn the SCS off, a positive pulse is applied to
the anode gate. This reverse-biases the base-emitter
junction of Q1 and turns it off. , in turn, cuts off and
the SCS ceases conduction, as shown in Figure.
The device can also be turned off with a negative
pulse on the cathode gate, as indicated in part (b).
The SCS typically has a faster turn-off time than
the SCR
SILICON
CONTROLLED
SWITCH
• Figure shows two switching
methods to reduce the anode
current below the holding
value. In each case, the bipolar
junction transistor (BJT) acts as
a switch to interrupt the anode
current.
SUMMARY
REFERENCES
• Basic Types of Thyristors and Applications - Electronics-Lab.com
• Shockley Diode Working Principle - Inst Tools (instrumentationtools.com)
• Electronic Devices by Floyd 9th edition

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THYRISTORS

• Switching Current The value of

*Gate controls VBF

TURNING THE SCR ON

• There are two basic methods for turning off an SCR:

• The anode current can be interrupted by either a

• A diac is a two-terminal four-layer

• Notice that there are two terminals, labelled A1

• The top and bottom layers contain both n and p

• The silicon-controlled switch (SCS) is similar in construction to the SCR.

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