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    Experiment # 01.

    Uploaded by

    ManzoorKhan
    This document summarizes an experiment to study the switching characteristics of a silicon controlled rectifier (SCR) under DC test conditions. The experiment involves building a circuit with an SCR, power supply, and control unit. The SCR remains off until the breakover voltage is exceeded, at which point it begins conducting current. Applying a gate signal lowers the breakover voltage and allows the SCR to turn on. To turn the SCR off, the anode current must drop below the holding current threshold. The results and conclusions confirm that the SCR switches on with gate control and off by reducing anode current.

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    Experiment # 01.

    Uploaded by

    ManzoorKhan
    138 views2 pages
    This document summarizes an experiment to study the switching characteristics of a silicon controlled rectifier (SCR) under DC test conditions. The experiment involves building a circuit with an SCR, power supply, and control unit. The SCR remains off until the breakover voltage is exceeded, at which point it begins conducting current. Applying a gate signal lowers the breakover voltage and allows the SCR to turn on. To turn the SCR off, the anode current must drop below the holding current threshold. The results and conclusions confirm that the SCR switches on with gate control and off by reducing anode current.

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    This document summarizes an experiment to study the switching characteristics of a silicon controlled rectifier (SCR) under DC test conditions. The experiment involves building a circuit with an SCR, power supply, and control unit. The SCR remains off until the breakover voltage is exceeded, at which point it begins conducting current. Applying a gate signal lowers the breakover voltage and allows the SCR to turn on. To turn the SCR off, the anode current must drop below the holding current threshold. The results and conclusions confirm that the SCR switches on with gate control and off by reducing anode current.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    138 views2 pages

    Experiment # 01.

    Uploaded by

    ManzoorKhan
    This document summarizes an experiment to study the switching characteristics of a silicon controlled rectifier (SCR) under DC test conditions. The experiment involves building a circuit with an SCR, power supply, and control unit. The SCR remains off until the breakover voltage is exceeded, at which point it begins conducting current. Applying a gate signal lowers the breakover voltage and allows the SCR to turn on. To turn the SCR off, the anode current must drop below the holding current threshold. The results and conclusions confirm that the SCR switches on with gate control and off by reducing anode current.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 2

    EXPERIMENT # 01

    DC test of an SCR (Silicon Controled Rectifier)

    OBJECTIVE :
    Study the switching characteristics of an SCR under DC test conditions .
    APPARATUSES :

    Power electronics control unit PE 481 ,


    Single electronics LCR load unit PE 481,
    Single thyrister circuits PE 481A ,
    Power supply,
    Connecting wires , etc.

    CIRCUIT DIAGRAM :

    THEORY :

    Thyrister is used as a rectifying or switching device.It is also known as the silicon controlled rectifier (SCR).It
    has three terminals (anode,cathode and gate).It allows current in one direction(forward bias) and blocks in other
    direction(reversed bias).The breakover or turn-on voltage of an SCR can be adjusted by a current flowing into its gate
    lead. Breakover voltage drops when the gate current increases .The V-I characteristics of thyrister shows that

    A Thyrister turns on when the voltage applied to it exceeds Breakover voltage and currents exceeds latching value.
    Turns off when the anode current drops below the Holding current value.
    Blocks current flow in the reverse direction until the maximum reverse voltage is exceeded .

    PROCEDURE:

    Make the circuit as shown in the diagram .


    Apply variable DC voltage of range (-15V to +15V) to anode with respect to cathode.
    Apply a variable DC voltage of range (0V to +5V) to gate with respect to cathode .
    In the absence of gate current , the Thyrister will remain off with increase in anode voltage below breakdown
    voltage.
    When a voltage of 0.57V is applied across the gate w.r.t cathode ,the breakover occures .
    With the application of gate voltage ,the anode current becomes more than the latching current value and Thyrister
    starts conduction.
    Then remove the gate voltage ,the Thyrister will still remain ON.
    To Off the Thyrister ,anode voltage is removed,the current will drop below the holding currrent value and as a result
    the Thyrister will stop conduction.
    Give some time to the Thyrister to make it Off .
    If we again apply anode voltage immediately,it will not require gate voltage to make it ON.

    RESULTS:
    Vg = ; Ig = ; R = ..

    CONCLUSION:

    Thyrister will remain Off untill the breakover voltage is applied .


    To reduce breakover voltage ,gate signal is applied .
    Convntional Thyrister cant be made Off by gate signal .
    To make Thyrister Off ,anode current is droped below the holding current .

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