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    6t Sram

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    Rekha Kumari
    This document discusses a term paper on 6T SRAM. It begins with an introduction to SRAM and its components. It then provides the circuit diagram and explains the theory and working of 6T SRAM. The advantages include simple and less area consumed design, high density, and fast response time. Disadvantages include relatively large size compared to other memory technologies. The document concludes that 6T SRAM remains important for its high speed and low power consumption, making it suitable for many applications.

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    6t Sram

    Uploaded by

    Rekha Kumari
    158 views13 pages
    This document discusses a term paper on 6T SRAM. It begins with an introduction to SRAM and its components. It then provides the circuit diagram and explains the theory and working of 6T SRAM. The advantages include simple and less area consumed design, high density, and fast response time. Disadvantages include relatively large size compared to other memory technologies. The document concludes that 6T SRAM remains important for its high speed and low power consumption, making it suitable for many applications.

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    About 6 T sram it's working principle with advantage and disadvantage

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    6t sram ppt

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    This document discusses a term paper on 6T SRAM. It begins with an introduction to SRAM and its components. It then provides the circuit diagram and explains the theory and working of 6T SRAM. The advantages include simple and less area consumed design, high density, and fast response time. Disadvantages include relatively large size compared to other memory technologies. The document concludes that 6T SRAM remains important for its high speed and low power consumption, making it suitable for many applications.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    158 views13 pages

    6t Sram

    Uploaded by

    Rekha Kumari
    This document discusses a term paper on 6T SRAM. It begins with an introduction to SRAM and its components. It then provides the circuit diagram and explains the theory and working of 6T SRAM. The advantages include simple and less area consumed design, high density, and fast response time. Disadvantages include relatively large size compared to other memory technologies. The document concludes that 6T SRAM remains important for its high speed and low power consumption, making it suitable for many applications.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 13

    Term paper Leading to Thesis on 6T SRAM

    Department Of Electronics & Communication


    Engineering
    Bhagalpur College Of Engineering, Bhagalpur
    Presented By
    Anu Kumari
    Reg No. - 21141108003
    Content
     Introduction
     Components

     Circuit diagram

     Theory and working

     Advantages and Disadvantages

     Future scope

     Conclusion

    1
    Introduction

    • It is a type of semiconductor that stores digital data in


    a static form.
    • Read stability and write stability are major concerns
    • 60% - 70 % area of chip is consumed by memory
    • SRAM cells are constructed using a combination of
    transition arranged in flip flop configuration.
    RAM (RANDOM ACCESS MEMORY)
    • SHORT TERM MEMORY
    • VOLATILE MEMORY
    • FASTER ACCESS TO DATA

    • TYPES OF RAM –

    1. SRAM ( STATIC RANDOM ACCESS MEMORY )


    2. DRAM ( DYNAMIC RANDOM ACCESS
    MEMORY)
    DIFFERENCE
    SRAM DRAM
    • Requires less memory • Requires more time
    • Access time is more
    • Needs to be refreshed
    • Access time is low • Slower access time
    • Do not refresh • Less power consumption
    • Faster access time • Used in main memory
    • More power
    consumption
    • Used in cache
    memory
    Evolution
    1st generation SRAM ( 1960)
    2nd generation SRAM( 1970 )

    3rd generation SRAM (1990)

    4th generation SRAM (2000)

    5th generation SRAM (2005)

    6
    Components

    • 6 transistor
    2 access transistor
    • Word line
    • Pre charge
    capacitor
    • Bit line

    Circuit design Of 6T SRAM


    Working principle
    • 2 inverters are connected in back to back connection
    • The output of the 1st inverter is connected to the input of 2nd
    inverter and vice versa
    • S RAM performs 3 operations –
    1. Hold
    2. Read
    3. Write
    • Whenever the two access pass transistor of the word line are in
    off state then the bit line and bit line bar are also in off
    condition , hence memory cell is in hold state
    • If both the bit and bit bar lines act as input then write operator
    can be performed
    • If both the bit and bit bar lines acts as outputs then the read
    operation can be performed
    Advantages
    • Simple and less area consumed design
    • Can be used in high density chip
    • Non- volatile need not to refresh
    • Faster response ( compared to other memory )

    Disadvantage
    • Relatively large size comapredto other memory
    technology
    • Costly
    FUTURE SCOPE
    • Artificial intelligence - Cache memory .

    • Autonomous vehicles - Used to reduce power


    consumption.

    • IoT - Reduce response time and delays.

    • High performance computing – access time less ,


    less power consumption .
    Conclusion
    Despite its limitations, 6T SRAM remains an important
    memory cell in modern digital circuits. Its high speed and
    low power consumption make it ideal for many
    applications, and its reliability and stability have been
    proven in many years of use. As technology continues to
    advance, new memory cells may emerge that offer even
    better performance, but for now, 6T SRAM remains an
    important building block in many digital systems.
    References
    [1]. H. Tran, “Demonstration of 5T SRAM and 6T Dual Port RAM Cell Arrays, Symposium
    on VLSI Circuits, pp. Demonstration Dual-Port Arrays,” 74-79, Jun. 2005.
    [2]. V. De and S. Borkar, “Technology and design challenges for low power and high
    performance”, International Symposium Low Power Electronics and Design, pp.167- 170,
    2000.
    [3]. S. Borkar, “Technology trends and design challenges for microprocessor
    design”,ESSIRC, pp. 10-18, Sep. 1995.
    [4]. S. Narendra, S. Borkar, V. De, D. Antoniadis, and A. Chandrakasan, “Scaling of stack
    effect and its application for leakage reduction,” in Proc. IEEE/ACM International
    Symposium on Low Power Electronics and Design, pp. 175– g y g 182, Aug.2006.
    [5].T. Floyd, “Digital Fundamentals”, Prentice Hall, ninth edition, 2007.
    [6]. J. M. Rabaey, A. Chandrakasan, [6] J M Rabaey A Chandrakasan and B Nikolic “Digital
    Integrated Circuits: A Design Perspective”, Prentice Hall B. Nikolic, Digital Perspective
    series in electronics and VLSI, Prentice Hall,second edition, 2006.
    n ks!
    T ha

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