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    SRAM Study

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    achyuthgundrapally

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    © All Rights Reserved
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    SRAM Study

    Uploaded by

    achyuthgundrapally
    4 views2 pages

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    4 views2 pages

    SRAM Study

    Uploaded by

    achyuthgundrapally

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Static Random Access Memory (SRAM) is a type of semiconductor memory that uses

    bistable latching circuitry to store each bit. It is used for caches, small memory arrays, and
    as part of various hardware circuits due to its high speed and low power consumption
    relative to DRAM. Here is an overview of the full functionality of SRAM:

    1. Basic Operation

    SRAM is composed of an array of memory cells, each of which stores one bit of data. Each
    memory cell typically consists of six transistors (6T SRAM) or eight transistors (8T SRAM).
    The key operations are:

    ● Read Operation: Retrieves the stored data from a memory cell.


    ● Write Operation: Stores new data into a memory cell.

    2. Memory Cell Structure

    ● 6T SRAM Cell: The most common SRAM cell configuration uses six transistors: two
    for the cross-coupled inverters forming a bistable circuit (latch), and four for the
    access transistors that connect the latch to the bit lines during read and write
    operations.
    ● 8T SRAM Cell: This cell adds two more transistors to improve read stability and
    reduce power consumption, often used in low-power applications.

    3. Address Decoding

    ● Row Decoder: Selects the row (word line) in the memory array.
    ● Column Decoder: Selects the column (bit line) in the memory array.

    4. Read Operation Steps

    1. Precharge Bit Lines: The bit lines are precharged to a specific voltage, typically
    VDD/2, to prepare for sensing.
    2. Word Line Activation: The row decoder activates the word line, turning on the
    access transistors and connecting the memory cell to the bit lines.
    3. Bit Line Differential: The stored value in the cell creates a small voltage differential
    between the bit lines.
    4. Sense Amplifier: The sense amplifier detects the small differential and amplifies it to
    a full logic level (either 0 or 1).

    5. Write Operation Steps

    1. Word Line Activation: The row decoder activates the word line.
    2. Write Driver Activation: The write driver asserts the data to be written onto the bit
    lines.
    3. Cell Overwrite: The new data overwrites the existing data in the selected memory
    cell by changing the state of the cross-coupled inverters.

    6. Control Signals
    ● Chip Enable (CE): Activates the memory chip for read/write operations.
    ● Write Enable (WE): Indicates a write operation.
    ● Output Enable (OE): Controls the output drivers during a read operation.

    7. Timing Considerations

    ● Access Time: The time between the read command and the availability of valid data
    at the output.
    ● Cycle Time: The minimum time between successive read/write operations.
    ● Setup Time: The time before the clock edge that data must be stable.
    ● Hold Time: The time after the clock edge that data must remain stable.

    8. Power Consumption

    ● Static Power Consumption: Power consumed when the SRAM is not actively being
    read or written.
    ● Dynamic Power Consumption: Power consumed during read/write operations due
    to switching activities.

    9. Applications

    ● Cache Memory: In CPUs and GPUs for fast data access.


    ● Registers: In microprocessors and microcontrollers.
    ● Embedded Systems: Where high-speed and low power are critical.
    ● Networking: In routers and switches for buffering and storage.

    10. Advantages and Disadvantages

    ● Advantages: High speed, low power consumption, and simplicity in control.


    ● Disadvantages: Higher cost per bit and lower density compared to DRAM, making it
    less suitable for large-scale memory applications.

    11. SRAM Variants

    ● Asynchronous SRAM: Operates independently of the clock signal.


    ● Synchronous SRAM: Operates in sync with a clock signal, allowing for faster and
    more predictable operation.

    This comprehensive functionality and structure make SRAM a crucial component in modern
    electronic systems, particularly where speed and efficiency are paramount.

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