Biasing: By: Mohit Goel

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Biasing

By: Mohit Goel


Answer: C
Answer: A
Operating point represents …………..
1.Values of IC and VCE when signal is applied
2.The magnitude of signal
3.Zero signal values of IC and VCE
4.None of the above
Answer: C
If biasing is not done in an amplifier circuit, it results in
……………
1.Decrease in the base current
2.Unfaithful amplification
3.Excessive collector bias
4.None of the above
Answer: B
The circuit that provides the best stabilization of operating point is …………
1.Base resistor bias
2.Collector feedback bias
3.Potential divider bias
4.None of the above
Answer: C
The point of intersection of d.c. and a.c. load lines represents …………..
1.Operating point
2.Current gain
3.Voltage gain
4.None of the above
Answer: A
An ideal value of stability factor is …………..
1.100
2.200
3.More than 200
4.1
Answer: D
The disadvantage of base resistor method of transistor biasing is that it …………
1.Is complicated
2.Is sensitive to changes in ß
3.Provides high stability
4.None of the above
Answer: B
The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA,
then IC will change by …………
1.100 µA
2.25 µA
3.20 µA
4.50 µA
Answer: D
The operating point is also called the ………….
1.Cut off point
2.Quiescent point
3.Saturation point
4.None of the above
Answer: B
For proper amplification by a transistor circuit, the operating point should be located at the ………….. of the
d.c. load line
1.The end point
2.Middle
3.The maximum current point
4.None of the above
Answer: B
Thermal runaway occurs when ……….
1.Collector is reverse biased
2.Transistor is not biased
3.Emitter is forward biased
4.Junction capacitance is high
Answer: B
Thermal runaway is_________
a) an uncontrolled positive feedback
b) a controlled positive feedback
c) an uncontrolled negative feedback
d) a controlled negative feedback
Answer: A
The thermal runway is avoided in a self bias because_________
a) of its independence on β
b) of the positive feedback produced by the emitter resistor
c) of the negative feedback produced by the emitter resistor
d) of its dependence on β
Answer: C
When the collector current is increased in a transistor_________
a) the reverse current is increased
b) the temperature is increased
c) collisions of electrons decrease
d) the emitter does not emit electrons
Answer: B
When the power dissipation increases in a transistor, the thermal
resistance_________
a) increases
b) cannot be predicted
c) decreases
d) remains same
Answer: C
The phenomenon of thermal runaway occurs due to maximum and simultanous increase in
power dissipation and _________ beyond safe operating value which ultimately results in
causing damage to transistor.

a. Collector Current
b. Emitter Current
c. Base Current
d. All of the above
Answer: A
Answer: D

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