MCQ(EC)

DIODE
Q2. A crystal diode has forward resistance of the order of ……………
1. kΩ
2. Ω
3. MΩ
4. none of the above
Answer : 2
Q3. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is
………….. biased.
1. forward
2. reverse
3. either forward or reverse
4. none of the above
Answer : 1
Q4. The reverse current in a diode is of the order of ……………….
1. kA
2. mA
3. μA
4. A
Answer : 3
Q5. The forward voltage drop across a silicon diode is about
…………………
1. 2.5 V
2. 3 V
3. 10 V
4. 0.7 V
Answer : 4
Q6. A crystal diode is used as ……………
1. an amplifier
2. a rectifier
3. an oscillator
4. a voltage regulator
Answer : 2
Q7. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
1. the same as
2. more than
3. less than
 4. none of the above
Answer : 3
Q8. An ideal crystal diode is one which behaves as a perfect ……….. when
forward biased.
1. conductor
2. insulator
3. resistance material
4. none of the above
Answer : 1
Q9. The ratio of reverse resistance and forward resistance of a germanium
crystal diode is about ………….
1. 1 : 1
2. 100 : 1
3. 1000 : 1
4. 40,000 : 1
Answer : 4
Q 10. The leakage current in a crystal diode is due to …………….
1. minority carriers
2. majority carriers
3. junction capacitance
4. none of the above
Answer :1
Q11. If the temperature of a crystal diode increases, then leakage current
………..
1. remains the same
2. decreases
3. increases
4. becomes zero
Answer :3
Q12. The PIV rating of a crystal diode is ………….. that of equivalent
vacuum diode
1. the same as
2. lower than
3. more than
4. none of the above
Answer :2
Q13. If the doping level of a crystal diode is increased, the breakdown
voltage………….
 1. remains the same
2. is increased
3. is decreased
4. none of the above
Answer :3
Q14. The knee voltage of a crystal diode is approximately equal to
………….
1. applied voltage
2. breakdown voltage
3. forward voltage
4. barrier potential
Answer :4
Q15. When the graph between current through and voltage across a device
is a straight line, the device is referred to as ……………….
1. linear
2. active
3. nonlinear
4. passive
Answer :1
Q16. When the crystal current diode current is large, the bias is …………
1. forward
2. inverse
3. poor
4. reverse
Answer :1
Q17. A crystal diode is a …………… device
1. non-linear
2. bilateral
3. linear
4. none of the above
Answer :1
Q18. A crystal diode utilises …………….. characteristic for rectification
1. reverse
2. forward
3. forward or reverse
4. none of the above
Answer :2
Q19. When a crystal diode is used as a rectifier, the most important
consideration is ………..
1. forward characteristic
2. doping level
3. reverse characteristic
4. PIC rating
Answer :4
Q20. If the doping level in a crystal diode is increased, the width of
depletion layer………..
1. remains the same
2. is decreased
3. in increased
4. none of the above
Answer :3
Q21. A zener diode has ………..
1. one pn junction
2. two pn junctions
3. three pn junctions
4. none of the above
Answer :1
Q22. A zener diode is used as …………….
1. an amplifier
2. a voltage regulator
3. a rectifier
4. a multivibrator
Answer :2
Q23. The doping level in a zener diode is …………… that of a crystal diode
1. the same as
2. less than
3. more than
4. none of the above
Answer :3
Q24. A zener diode is always ………… connected.
1. reverse
2. forward
3. either reverse or forward
4. none of the above
Answer :1
Q25. A zener diode utilizes ……….. characteristics for its operation.
1. forward
2. reverse
3. both forward and reverse
4. none of the above
Answer :2
Q26. In the breakdown region, a zener didoe behaves like a ……………
source.
1. constant voltage
2. constant current
3. constant resistance
4. none of the above
Answer :1
27. A zener diode is destroyed if it…………..
1. is forward biased
2. is reverse biased
3. carrier more than rated current
4. none of the above
Answer :3
Q28. A series resistance is connected in the zener circuit to………..
1. properly reverse bias the zener
2. protect the zener
3. properly forward bias the zener
4. none of the above
Answer :2
A29. A zener diode is …………………. device
1. a non-linear
2. a linear
3. an amplifying
4. none of the above
Answer :1
Q30. A zener diode has ………….. breakdown voltage
1. undefined
2. sharp
3. zero
4. none of the above
Answer :2
Q31. ……………. rectifier has the lowest forward resistance
1. solid state
2. vacuum tube
3. gas tube
4. none of the above
Answer :1
Q32. Mains a.c. power is converrted into d.c. power for ……………..
1. lighting purposes
2. heaters
3. using in electronic equipment
4. none of the above
Answer :3
Q33. The disadvantage of a half-wave rectifier is that the……………….
1. components are expensive
2. diodes must have a higher power rating
3. output is difficult to filter
4. none of the above
Answer :3
Q34. If the a.c. input to a half-wave rectifier is an r.m.s value of 400/√2
volts, then diode PIV rating is ………………….
1. 400/√2 V
2. 400 V
3. 400 x √2 V
4. none of the above
Answer :2
Q35. The ripple factor of a half-wave rectifier is …………………
1. 2
2. 1.21
3. 2.5
4. 0.48
Answer :2
Q36. There is a need of transformer for ………………..
1. half-wave rectifier
2. centre-tap full-wave rectifier
3. bridge full-wave rectifier
4. none of the above
Answer :2
Q37. The PIV rating of each diode in a bridge rectifier is ………………
that of the equivalent centre-tap rectifier
1. one-half
2. the same as
3. twice
4. four times
Answer :1
Q38. For the same secondary voltage, the output voltage from a centre-tap
rectifier is ………… than that of bridge rectifier
1. twice
2. thrice
3. four time
4. one-half
Answer :4
Q39. If the PIV rating of a diode is exceeded, ………………
1. the diode conducts poorly
2. the diode is destroyed
3. the diode behaves like a zener diode
4. none of the above
Answer :2
Q40. A 10 V power supply would use …………………. as filter capacitor.
1. paper capacitor
2. mica capacitor
3. electrolytic capacitor
4. air capacitor
Answer :3
Q41. A 1,000 V power supply would use ……….. as a filter capacitor
1. paper capacitor
2. air capacitor
3. mica capacitor
4. electrolytic capacitor
Answer :1
Q42. The ……………….. filter circuit results in the best voltage regulation
1. choke input
2. capacitor input
3. resistance input
4. none of the above
Answer :1
Q43. A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-
down transformer has a turns ratio of 8:1, what is the peak load voltage?
Ignore diode drop.
1. 27.5 V
2. 86.5 V
3. 30 V
4. 42.5 V
Answer :4
Q44. The maximum efficiency of a half-wave rectifier is ………………..
1. 40.6 %
2. 81.2 %
3. 50 %
4. 25 %
Answer :1
Q45. The most widely used rectifier is ……………….
1. half-wave rectifier
2. centre-tap full-wave rectifier
3. bridge full-wave rectifier
4. none of the above
Answer :3
 TRANSISTOR

Q2. The number of depletion layers in a transistor is …………

1. four

2. three

3. one

4. two

Answer : 4

Q3. The base of a transistor is ………….. doped

1. heavily

2. moderately

3. lightly

4. none of the above

Answer : 3

Q4. The element that has the biggest size in a transistor is ………………..

1. collector

2. base

3. emitter

4. collector-base-junction

Answer : 1

Q5. In a pnp transistor, the current carriers are ………….

1. acceptor ions

2. donor ions

3. free electrons

4. holes

Answer : 4

Q6. The collector of a transistor is …………. doped

1. heavily

2. moderately

3. lightly
 4. none of the above

Answer : 2

Q7. A transistor is a …………… operated device

1. current

2. voltage

3. both voltage and current

4. none of the above

Answer : 1

Q8. In a npn transistor, ……………. are the minority carriers

1. free electrons

2. holes

3. donor ions

4. acceptor ions

Answer : 2

Q9. The emitter of a transistor is ………………… doped

1. lightly

2. heavily

3. moderately

4. none of the above

Answer : 2

Q10. In a transistor, the base current is about ………….. of emitter current

1. 25%

2. 20%

3. 35 %

4. 5%

Answer : 4

Q11. At the base-emitter junctions of a transistor, one finds ……………

1. a reverse bias

2. a wide depletion layer

 3. low resistance

4. none of the above

Answer : 3

Q12. The input impedance of a transistor is ………….

1. high

2. low

3. very high

4. almost zero

Answer : 2

Q13. Most of the majority carriers from the emitter ………………..

1. recombine in the base

2. recombine in the emitter

3. pass through the base region to the collector

4. none of the above

Answer :3

Q14. The current IB is …………

1. electron current

2. hole current

3. donor ion current

4. acceptor ion current

Answer : 1

Q15. In a transistor ………………..

IC = IE + IB

IB = IC + IE

IE = IC – IB

IE = IC + IB

Answer : 4

Q16. The value of α of a transistor is ……….

 more than 1
  less than 1

 1

 none of the above

Answer : 2

Q17. IC = αIE + ………….

1. IB

2. ICEO

3. ICBO

4. βIB

Answer : 3

Q18. The output impedance of a transistor is ……………..

1. high

2. zero

3. low

4. very low

Answer : 1

Q19. In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of β is …………

1. 100

2. 50

3. about 1

4. 200

Answer : 4

Q20. In a transistor if β = 100 and collector current is 10 mA, then IE is …………

1. 100 mA

2. 100.1 mA

3. 110 mA

4. none of the above

Answer : 2

Q21. The relation between β and α is …………..

 1. β = 1 / (1 – α )

2. β = (1 – α ) / α

3. β = α / (1 – α )

4. β = α / (1 + α )

Answer : 3

Q22. The value of β for a transistor is generally ………………..

1. 1

2. less than 1

3. between 20 and 500

4. above 500

Answer : 3

Q23. The most commonly used transistor arrangement is …………… arrangement

1. common emitter

2. common base

3. common collector

4. none of the above

Answer : 1

Q24. The input impedance of a transistor connected in …………….. arrangement is the highest

1. common emitter

2. common collector

3. common base

4. none of the above

Answer : 2

Q25. The output impedance of a transistor connected in ……………. arrangement is the highest

1. common emitter

2. common collector

3. common base

4. none of the above

Answer : 3
Q26. The phase difference between the input and output voltages in a common base arrangement is
…………….

1. 180o

2. 90o

3. 270o

4. 0o

Answer : 4

Q27. The power gain in a transistor connected in ……………. arrangement is the highest

1. common emitter

2. common base

3. common collector

4. none of the above

Answer : 1

Q28. The phase difference between the input and output voltages of a transistor connected in
common emitter arrangement is ………………

1. 0o

2. 180o

3. 90o

4. 270o

Answer : 2

Q29. The voltage gain in a transistor connected in ………………. arrangement is the highest

1. common base

2. common collector

3. common emitter

4. none of the above

Answer : 3

Q30. As the temperature of a transistor goes up, the base-emitter resistance ……………

1. decreases

2. increases
 3. remains the same

4. none of the above

Answer : 1

Q31. The voltage gain of a transistor connected in common collector arrangement is ………..

1. equal to 1

2. more than 10

3. more than 100

4. less than 1

Answer : 4

Q32. The phase difference between the input and output voltages of a transistor connected in
common collector arrangement is ………………

1. 180o

2. 0o

3. 90o

4. 270o

Answer : 2

Q33. IC = β IB + ………..

1. ICBO

2. IC

3. ICEO

4. αIE

Answer : 3

Q34. IC = [α / (1 – α )] IB + ………….

1. ICEO

2. ICBO

3. IC

4. (1 – α ) IB

Answer : 1

Q35. IC = [α / (1 – α )] IB + […….. / (1 – α )]
 1. ICBO

2. ICEO

3. IC

4. IE

Answer : 1

Q36. BC 147 transistor indicates that it is made of …………..

1. germanium

2. silicon

3. carbon

4. none of the above

Answer : 2

Q37. ICEO = (………) ICBO

1. β

2. 1 + α

3. 1 + β

4. none of the above

Answer : 3

Q38. A transistor is connected in CB mode. If it is not connected in CE mode with same bias voltages,
the values of IE, IB and IC will …………..

1. remain the same

2. increase

3. decrease

4. none of the above

Answer : 1

Q39. If the value of α is 0.9, then value of β is ………..

1. 9

2. 0.9

3. 900

4. 90
Answer : 4

Q40. In a transistor, signal is transferred from a …………… circuit

1. high resistance to low resistance

2. low resistance to high resistance

3. high resistance to high resistance

4. low resistance to low resistance

Answer : 2

Q41. The arrow in the symbol of a transistor indicates the direction of ………….

1. electron current in the emitter

2. electron current in the collector

3. hole current in the emitter

4. donor ion current

Answer : 3

Q42. The leakage current in CE arrangement is ……………. that in CB arrangement

1. more than

2. less than

3. the same as

4. none of the above

Answer : 1

Q43. A heat sink is generally used with a transistor to …………

1. increase the forward current
2. decrease the forward current
3. compensate for excessive doping
4. prevent excessive temperature rise
Answer : 4
Q44. The most commonly used semiconductor in the manufacture of a
transistor is ………….
1. germanium
2. silicon
3. carbon
4. none of the above
Answer : 2
Q45. The collector-base junction in a transistor has ……………..
1. forward bias at all times
2. reverse bias at all times
3. low resistance
4. none of the above
Answer : 2
Q46. When transistors are used in digital circuits they usually operate in
the ………….
1. active region
2. breakdown region
3. saturation and cutoff regions
4. linear region
Answer : 3
Q47. Three different Q points are shown on a dc load line. The upper Q
point represents the ………….
1. minimum current gain
2. intermediate current gain
3. maximum current gain
4. cutoff point
Answer : 3
Q48. A transistor has a of 250 and a base current, IB, of 20 A. The
collector current, IC, equals to …………….
1. 500 μA
2. 5 mA
3. 50 mA
4. 5 A
Answer : 2
Q49. A current ratio of IC/IE is usually less than one and is called …………
1. beta
2. theta
3. alpha
4. omega
Answer : 3
Q50. With the positive probe on an NPN base, an ohmmeter reading
between the other transistor terminals should be ……
1. open
2. infinite
3. low resistance
 4. high resistance
Answer : 3
Q51. In a CE configuration, an emitter resistor is used for ……
1. stabilization
2. ac signal bypass
3. collector bias
4. higher gain
Answer : 1
Q52. Voltage-divider bias provides ……….
1. an unstable Q point
2. a stable Q point
3. a Q point that easily varies with changes in the transistor’s current gain
4. a Q point that is stable and easily varies with changes in the transistor’s
current gain
Answer : 2
Q53. To operate properly, a transistor’s base-emitter junction must be
forward biased with reverse bias applied to which junction?
1. collector-emitter
2. base-collector
3. base-emitter
4. collector-base
Answer : 4
Q54. The ends of a load line drawn on a family of curves determine ……
1. saturation and cutoff
2. the operating point
3. the power curve
4. the amplification factor
Answer : 1
Q55. If VCC = +18 V, voltage-divider resistor R1 is 4.7 k , and R2 is 1500 ,
then the base bias voltage is ……….
1. 8.7 V
2. 4.35 V
3. 2.9 V
4. 0.7 V
Answer: 2
Q56. The C-B configuration is used to provide which type of gain?
1. voltage
2. current
 3. resistance
4. power
Answer : 1
Q57. The Q point on a load line may be used to determine …………
1. VC
2. VCC
3. VB
4. IC
Answer : 3
Q58. A transistor may be used as a switching device or as a ………….
1. fixed resistor
2. tuning device
3. rectifier
4. variable resistor
Answer : 4
Q59. If an input signal ranges from 20–40 A (microamps), with an output
signal ranging from .5–1.5 mA (milliamps), what is the ac beta?
1. 0.05
2. 20
3. 50
4. 500
Answer : 3
Q60. Beta’s current ratio is ……..
1. IC/IB
2. IC/IE
3. IB/IE
4. IE/IB
Answer: 1
Q61. A collector characteristic curve is a graph showing ………..
1. emitter current (IE) versus collector-emitter voltage (VCE) with (VBB) base
bias voltage held constant
2. collector current (IC) versus collector-emitter voltage (VCE) with (VBB) base
bias voltage held constant
3. collector current (IC) versus collector-emitter voltage (VC) with (VBB) base
bias voltage held constant
4. collector current (IC) versus collector-emitter voltage (VCC) with (VBB) base
bias voltage held constant
Answer: 2
Q62. With low-power transistor packages, the base terminal is usually the
……….
1. tab end
2. middle
3. right end
4. stud mount
Answer: 2
Q63. When a silicon diode is forward biased, VBE for a CE configuration is
……..
1. voltage-divider bias
2. 0.4 V
3. 0.7 V
4. emitter voltage
Answer: 3
Q64. What is the current gain for a common-base configuration where IE =
4.2 mA and IC = 4.0 mA?
1. 16.8
2. 1.05
3. 0.2
4. 0.95
Answer: 4
Q65. With a PNP circuit, the most positive voltage is probably …………
1. ground
2. VC
3. VBE
4. VCC
Answer: 1
Q66. If a 2 mV signal produces a 2 V output, what is the voltage gain?
1. 0.001
2. 0.004
3. 100
4. 1000
Answer: 4
Q67. Most of the electrons in the base of an NPN transistor flow …………
1. out of the base lead
2. into the collector
3. into the emitter
4. into the base supply
Answer: 2
Q68. In a transistor, collector current is controlled by ………..
1. collector voltage
2. base current
3. collector resistance
4. all of the above
Answer: 2
Q69. Total emitter current is …………
1. IE – IC
2. IC + IE
3. IB + IC
4. IB – IC
Answer: 3
Q70. Often a common-collector will be the last stage before the load; the
main function(s) of this stage is to ………….
1. provide voltage gain
2. provide phase inversion
3. provide a high-frequency path to improve the frequency response
4. buffer the voltage amplifiers from the low-resistance load and provide
impedance matching for maximum power transfer
Answer: 4

Q71. For a CC configuration to operate properly, the collector-base

junction should be reverse biased, while forward bias should be applied to
…………… junction.
1. collector-emitter
2. base-emitter
3. collector-base
4. cathode-anode
Answer: 1
Q72. The input/output relationship of the common-collector and common-
base amplifiers is ………..
1. 270 degrees
2. 180 degrees
3. 90 degrees
4. 0 degrees
Answer: 4
Q73. If a transistor operates at the middle of the dc load line, a decrease in
the current gain will move the Q point ………….
1. off the load line
2. nowhere
3. up
4. down
Answer: 4
Q74. Which is the higher gain provided by a CE configuration?
1. voltage
2. current
3. resistance
4. power
Answer: 4
Q75. What is the collector current for a CE configuration with a beta of
100 and a base current of 30 A?
1. 30 A
2. 0.3 A
3. 3 mA
4. 3 MA
Answer: 3