HINDUSTHAN COLLEGE OF ARTS AND SCIENCE

COIMBATORE
DEPARTMENT OF ELECTRONICS

SUBJECT: SEMICONDUCTOR DEVICES

CODE: 17ELU03

UNIT: I ATOMIC STRUCTURE AND SEMICONDUCTOR PHYSICS

1. Orbits in which electrons move according to Bohr are__________.

A. Elliptical
B. Cylindrical
C. Circular
D. Oval

ANSWER:C

2. A semiconductor is formed by _________ bonds.

A. Covalent
B. Electrovalent
C. Co-ordinate
D. None of the above

ANSWER: A

3. Energy of each orbit is________.

A. Changed
B. Fixed
C. Not same
D. Effected

ANSWER: B

4. When an electron jumps from its orbit to another orbit, energy

is__________.

A. Emitted only
B. Absorbed only
C. Emitted and absorbed
D. No effect

ANSWER: C

5. Energy gap is overlapped between Valence band and conduction band

in__________.

A. Conductors
B. Insulators
C. Semiconductors
D. Super semiconductors

ANSWER: A

6. Valence electrons in germanium are present in____________.

A. 3rd shell
B. 4th shell
C. 5th shell
 D. 6th shell

ANSWER: B

7. Holes in n-type materials are called__________.

A. Majority carriers
B. Medium carriers
C. Minority carriers
D. Zero carriers

ANSWER: C

8. Which of following is not a trivalent impurity atom?

A. Boron
B. Indium
C. Gallium
D. Phosphorous

ANSWER: D

9. Impurity are added to increase holes in intrinsic silicon are called

___________.

A. Bivalent impurities
B. Pentavalent impurities
C. Trivalent impurities
D. Divalent impurities

ANSWER: C

10. In case of pure insulators, covalent band is__________.

A. Full
B. Empty
C. Semi filled
D. Similar to conduction band

ANSWER: B

11. Semiconductor material doped with pentavalent impurity is

called___________.

A. N-type
B. P-type
C. Neutral-type
D. Intrinsic-type

ANSWER: A

12. In p-type material, minority carriers are_____________.

A. Holes
B. Neutrons
C. Protons
D. Electrons

ANSWER: D

13. By doping, trivalent electrons give up a hole called ______________.

A. Donor
 B. Acceptor
C. Combiner
D. Generator

ANSWER: A

14. In a semiconductor, current conduction is due to _____________.

A. Only holes
B. Only free electrons
C. Holes and free electrons
D. None of the above

ANSWER: C

15. Semiconductor at 0 K temperatures behaves as____________.

A. Insulator
B. Conductor
C. Semiconductor
D. Superconductor

ANSWER: A

16. A semiconductor has___________ temperature coefficient of resistance.

A. Positive
B. Zero
C. Negative
D. High

ANSWER: C

17. In an intrinsic semiconductor, the number of free electrons __________.

A. Not equal the number of holes

B. Is greater than the number of holes
C. Is less than the number of holes
D. Equals the number of holes

ANSWER: D

18. The battery connections required to forward bias a pn junction are

___________.

A. +ve terminal to p and –ve terminal to n

B. -ve terminal to p and +ve terminal to n
C. -ve terminal to p and –ve terminal to n
D. None of the above

ANSWER: A

19. A reverse biased pn junction has __________.

A. Very narrow depletion layer

B. Almost no current
C. Very low resistance
D. Large current flow

ANSWER: B

20. The leakage current across a pn junction is due to _________.

 A. Minority carriers
B. Majority carriers
C. Junction capacitance
D. Resistance

ANSWER: A

21. In the depletion region of a pn junction, there is a shortage of

_________.

A. Acceptor ions
B. Holes and electrons
C. Donor ions
D. Holes

ANSWER: B

22. The leakage current in a pn junction is of the order of ____________.

A. Aa
B. mA
C. kA
D. µA

ANSWER: D

23. The knee voltage (cut in voltage) of Si diode is ___________.

A. 0.2 V
B. 0.7 V
C. 0.8 V
D. 1.0 V

ANSWER: B

24. Diode characteristic curve is a plot between _________.

A. Current and time

B. Voltage and time
C. Voltage and current
D. Both a and b

ANSWER: C

25. PIV is particular importance in _________.

A. Rectifier service
B. Filter service
C. Blocking service
D. Freewheeling service

ANSWER: A

UNIT: II SEMICONDUCTOR DIODES

1. A Zener diode has _________.

A. Two pn junction
B. One pn junctions
C. Three pn junctions
D. None of the above
 ANSWER: B

2. A Zener diode utilizes __________characteristics for its operation.

A. Forward
B. Reverse
C. Both forward and reverse
D. None of the above

ANSWER: B

3. In the breakdown region, a Zener diode behaves like a____________source.

A. Constant voltage
B. Constant current
C. Constant resistance
D. None of the above

ANSWER: A

4. Tunnel diode consists of depletion region which is __________________.

A. Narrow
B. Wide
C. Of infinite ratio
D. Overlapped to n region

ANSWER: A

5. Tunnel diode exhibits special characteristics known as _______________.

A. Positive resistance
B. Positive reactance
C. Negative resistance
D. Negative reactance

ANSWER: C

6. Schottky diodes are used primarily in high-frequency & fast-switching

applications ______.

B. False

ANSWER: A

7. In varactor diodes, junction capacitance varies with the amount of

forward-bias voltage
_______.

A. True
B. False

ANSWER: B

8. The varactor is usually ______________.

A. Unbiased
B. Reverse biased
C. Forward biased
D. In the breakdown region

ANSWER: B
 9. The PIN diode has __________.

A. An intrinsic layer between heavily doped P and N layers

B. An P layer between heavily doped P and N junction
C. An N layer between heavily doped P and N junction
D. None of the above

ANSWER: A

10. The PIN diode works as rectifier at _____________.

A. High frequency
B. Low frequency
C. All frequencies
D. None of these

ANSWER: B

11. The main material used in the construction of PIN diodes is

____________.

A. GaAs
B. Se
C. Ge
D. Si

ANSWER: B

12. In semiconductors upon increasing temperature, conductivity

______________.

A. Decreases
B. Increases
C. Remains constant
D. Haphazard

ANSWER: B

13. In NTC thermistor on increasing temperature, resistance ______________.

A. Increases
B. Remains constant
C. Decreases
D. Behaves abruptly

ANSWER: C

14. PTC stands for _______________.

A. Positive temperature coefficient

B. Positive thermal coefficient
C. Past temperature coefficient
D. Past temperature constant

ANSWER: A

15. _________ diode is used in a tuning circuit.

A. A LED.
B. A Schottky diode
C. A Gunn diode
D. A varactor

ANSWER: D
16. The Schottky diode is used in ___________.

A. In high-power circuits.
B. In circuits requiring negative resistance.
C. In very fast-switching circuits.
D. In power supply rectifiers

ANSWER: C

17. Diode which uses graded doping is ______________.

A. Step recovery Diode

B. Tunnel Diode
C. PIN Diode
D. LED

ANSWER: A

18. The negative resistance in a Gunn diode is because of ___________.

A. High voltage gradient which causes the avalanche breakdown

B. Electron transfer to a less mobile energy level
C. Electron transfer to a more mobile energy level
D. Tunneling across the junction

ANSWER: B

19. The minority carrier storage time in the Schottky diode is _________.

A. 0.15 ms
B. Infinite
C. Zero
D. None of the above

ANSWER: C

20. When forward biased, LED emits light because of ____________.

A. Recombination of carriers
B. Light generated in breaking the covalent bonds
C. Light produced by collisions
D. All of the above reasons

ANSWER: A

21. The advantage of LED is ___________.

A. Long life
B. Fast on-off switching
C. Low operating voltage
D. All of the above

ANSWER: D

22. The Gunn effect is also known as __________.

A. Transient avalanche effect

B. Auto electronic effect
C. Transfer transient effect
D. Transferred electron effect

ANSWER: D
 23. The Gunn diode has_____________.

A. A single P-N junction

B. Three P-N junction
C. No P-N junction
D. Two P-N junction

ANSWER: A

24. Which one is based on forward biased PN junction?

A. Photo diode
B. LED
C. Photo voltaic cell
D. Both a and b

ANSWER: B

25. Color of light emitted by LED depends on _____________.

A. Its forward bias

B. Its reverse bias
C. Forward current
D. Semiconductor material

ANSWER: D

UNIT: III TRANSISTORS

1. A transistor has ____________.

A. One pn junction
B. Two pn junctions
C. Three pn junctions
D. Four pn junctions

ANSWER: B

2. When Si NPN transistor in inactive, the base to emitter voltage is equal

to ________.

A. 0.6
B. 0.4
C. 1.4
D. 0.88

ANSWER: A

3. The most commonly used transistor arrangement is _________arrangement.

A. Common base
B. Common emitter
C. Common collector
D. None of the above

ANSWER: B

4. The phase difference between the input and output voltages in a CB

arrangement is ________.

A. 180o
B. 90o
 C. 270o
D. 0o

ANSWER: D

5. The phase difference between the input and output voltages in a CE

arrangement is _______.

A. 0o
B. 180o
C. 90o
D. 270o

ANSWER: B

6. In a CE configuration, an emitter resistor is used for _________.

A. Stabilization
B. Ac signal bypass
C. Collector bias
D. Higher gain

ANSWER: A

7. The ends of a load line drawn on a family of curves determine

____________.

A. The power curve

B. The operating point
C. Saturation and cutoff
D. The amplification factor

ANSWER: C

8. When a silicon diode is forward biased, VBE for a CE configuration is

____________?

A. Voltage-divider bias
B. 0.7 V
C. 0.4 V
D. Emitter voltage

ANSWER: C

9. A transistor may be used as a switching device or as a __________.

A. Fixed resistor
B. Tuning device
C. Rectifier
D. Variable resistor

ANSWER: D

10. Total emitter current is ___________.

A. IE – IC
B. IC + IE
C. IB + IC
D.IB – IC

ANSWER: C

11. Voltage-divider bias provides ____________.

 A. An unstable Q point
B. A stable Q point
C. A Q point that easily varies with changes in the transistor’s current
gain
D. A Q point that is stable and easily varies with changes in the
transistor’s current gain

ANSWER: B

12. Beta’s current ratio is ___________.

A. IC/IB
B. IC/IE
C. IB/IE
D. IE/IB

ANSWER: A

13. A current ratio of IC/IE is usually less than one and is

called__________.

A. Beta
B. Theta
C. Alpha
D. Omega

ANSWER: C

14. Three different Q points are shown on a dc load line. The upper Q point
represents _______.

A. Minimum current gain

B. Intermediate current gain
C. Maximum current gain
D. Cutoff point

ANSWER: C

15. The leakage current in CE arrangement is __________that in CB

arrangement.

A. More than
B. Less than
C. The same as
D. None of the above

ANSWER: A

16. The base of a transistor is __________ doped.

A. Heavily
B. Moderately
C. Lightly
D. None of the above

ANSWER: C

17. Transistor biasing is done to keep ___________ in the circuit.

A. Proper direct current

B. Proper alternating current
C. The base current small
D. Collector current small
 ANSWER: A

18. If biasing is not done in an amplifier circuit, it results in

_____________.

A. Decrease in the base current

B. Unfaithful amplification
C. Excessive collector bias
D. None of the above

ANSWER: B

19. The disadvantage of base resistor method of transistor biasing is that it

__________.

A. Is complicated
B. Is sensitive to changes in ß
C. Provides high stability
D. None of the above

ANSWER: B

20. The operating point is also called the __________.

A. Cut off point

B. Quiescent point
C. Saturation point
D. None of the above

ANSWER: A

21. The purpose of resistance in the emitter circuit of a transistor

amplifier is to ___________.

A. Limit the maximum emitter current

B. Provide base-emitter bias
C. Limit the change in emitter current
D. None of the above

ANSWER: C

22. The value of VBE __________.

A. Depends upon IC to moderate extent

B. Is almost independent of IC
C. Is strongly dependant on IC
D. None of the above

ANSWER: B

23. Which is the higher gain provided by a CE configuration______________?

A. Voltage
B. Current
C. Resistance
D. Power

ANSWER: D

24. If a 2 mV signal produces a 2 V output, what is the voltage

gain____________.

A. 0.001
B. 0.004
C. 1000
D. 100

Answer: C

25. The C-B configuration is used to provide which type of

gain______________.

A. Voltage
B. Current
C. Resistance
D. Power

Answer: A

UNIT: IV FIELD EFFECT TRANSISTORS

1. A JFET has three terminals, namely __________.

A. Cathode, anode, grid

B. Emitter, base, collector
C. Source, gate, drain
D. None of the above

Answer: C

2. A JFET is also called ___________transistor.

A. Unipolar
B. Bipolar
C. Unjunction
D. None of the above

Answer: A

3. The gate of a JFET is ______ biased.

A. Forward
B. Reverse
C. Reverse as well as forward
D. None of the above

Answer: B

4. In a p-channel JFET, the charge carriers are _____________.

A. Electrons
B. Photons
C. Both electrons and holes
D. Holes

Answer: D

5. If the reverse bias on the gate of a JFET is increased, then width of the
conducting channel ______________.

A. Is decreased
B. Is increased
 C. Remains the same
D. None of the above

Answer: A

6. The input impedance of a JFET is __________ that of an ordinary

transistor.

A. Equal to
B. Less than
C. More than
D. Constant

Answer: C

7. In a JFET, when drain voltage is equal to pinch-off voltage, the

depletion layers _________.

A. Less gap
B. Have large gap
C. Have moderate gap
D. Almost touch each other

Answer: D

8. In a JFET, IDSS is known as_____________.

A. Drain to source current

B. Drain to source current with gate shorted
C. Drain to source current with gate open
D. None of the above

Answer: B

9. ___________ has the lowest noise-level.

A. Triode
B. Ordinary transistor
C. Tetrode
D. JFET

Answer: D

10. A MOSFET is sometimes called _________ JFET.

A. Many gate
B. Open gate
C. Insulated gate
D. Shorted gate

Answer: C

11. Which of the following devices has the highest input

impedance___________?

A. JFET
B. MOSFET
C. Crystal diode
D. Ordinary transistor

Answer: B

12. A MOSFET uses the electric field of a __________ to control the channel
current.
 A. Capacitor
B. Battery
C. Generator
D. Resistor

Answer: A

13. The input impedance of a MOSFET is of the order of __________.

A. Ω ?
B. A few hundred Ω ?
C. kΩ?
D. Several MΩ?

Answer: D

14. The constant-current region of a JFET lies between _____________.

A. Cut off and saturation

B. Cut off and pinch-off
C. o and IDSS
D. Pinch-off and breakdown

Answer: D

15. A MOSFET differs from a JFET mainly because ___________.

A. Of power rating
B. The MOSFET has two gates
C. The JFET has a pn junction
D. None of the above

Answer: C

16. A N-channel D-MOSFET with a positive VGS is operating in _____________.

A. The depletion-mode
B. The enhancement-mode
C. Cut off
D. Saturation

Answer: B

17. When an input signal reduces the channel size, the process is
called_____________.

A. Enhancement
B. Substrate connecting
C. Gate charge
D. Depletion

Answer: D

18. The depletion N-channel MOSFET ______________.

A. Can be operated as a JFET with zero gate voltage

B. Can be operated as an enhancement MOSFET by applying +ve bias to gate
C. Can be operated as an enhancement MOSFET by applying -ve bias to gate
D. Cannot be operated as an enhancement MOSFET

Answer: B
 19.The MOSFET stands for________________.

A. Metal oxidized selenium FET

B. Metal oxide surface FET
C. Metal oxide semiconductor FET
D. Metal of surface FET

Answer: C

20.In MOSFETs N-channel is more preferred than P-channel

because_____________.

A. It is cheaper
B. It is faster
C. It has better drive capability
D. It has better noise immunity

Answer: B

21.The enhancement N-channel MOSFET_____________.

A. Cannot be operated as an enhancement MOSFET

B. Can be operated as a JFET with zero gate voltage
C. Can be operated as an enhancement MOSFET by applying -ve bias to gate
D. Can be operated as an enhancement MOSFET by applying +ve bias to gate

Answer: A

22. How will electrons flow through a p-channel JFET___________?

A. From source to drain

B. From source to gate
C. From drain to gate
D. From drain to source

Answer: D

23. Which component is considered to be an "OFF" device___________?

A. Transistor
B. JFET
C. E-MOSFET
D. D-MOSFET

Answer: C

24.An enhancement-type MOSFET or E-MOSFET can be turned on when the channel

is Depleted.

A. True
B. False

Answer: B

25. A D-MOSFET cannot be biased using zero biasing.

A. True
B. False

Answer: B

UNIT: V THYRISTORS
 1. An SCR is turned off by ___________.

A. Reducing anode voltage to zero

B. Reducing gate voltage to zero
C. Reverse biasing the gate
D. None of the above

Answer: A

2. If latching current of a thyristor is 10 mA then its holding current

should be____________.

A. 0.0005A
B. 0.0007A
C. 0.02A
D. 0.002 A

Answer: A

3. An SCR has__________PN junctions.

A. Two
B. Three
C. Four
D. None of the above

Answer: B

4. An SCR is a __________ triggered device.

A. Voltage
B. Current
C. Voltage as well as current
D. None of the above

Answer: B

5. In a UJT, the p-type emitter is__________doped.

A. Lightly
B. Heavily
C. Moderately
D. None of the above

Answer: B

6. A UJT is sometimes called __________diode.

A. Low resistance
B. High resistance
C. Single-base
D. Double-base

Answer: D

7. Which of the following is a four-layer diode with an anode gate and a

cathode gate_________.

A. SCS
B. SCR
C. SBS
D. SUS
 Answer: A

8. The silicon-controlled switch (SCS) is similar in construction to the

______________.

A. TRIAC
B. DIAC
C. SCR
D. 4-Layer diode

Answer: C

9. An SCR combines the feature of ___________.

A. Rectifier and resistance

B. Rectifier and capacitor
C. Rectifier and transistor
D. Rectifier and inductor

Answer: C

10. An effect that reduces the possibility of accidental triggering of the

SCS__________.

A. Miller effect
B. Rate effect
C. End effect
D. Flywheel effect

Answer: B

11. Which device exhibits negative resistance region_________.

A. Diac
B. Triac
C. Transistor
D. UJT

Answer: D

12. A Triac has three terminals are ____________.

A. Drain, source, gate

B. Two main terminal and a gate terminal
C. Cathode, anode, gate
D. None of the above

Answer : B

13. A Triac is equivalent to two SCRs ____________.

A. In parallel
B. In series
C. In inverse-parallel
D. None of the above

Answer : C

14. A Triac is a ________ switch.

A. Bidirectional
B. Unidirectional
C. Mechanical
D. None of the above
 Answer : A

15. A Diac has _________ terminals.

A. Five
B. Two
C. Four
D. Six

Answer : B

16. A Diac has _________ pn junctions.

A. Four
B. Two
C. Three
D. One

Answer : B

17. The device that does not have the gate terminal is _________.

A. Triac
B. FET
C. SCR
D. Diac

Answer : D

18. The normal way to turn on a diac is by_____________.

A. Gate current
B. Gate voltage
C. Breakover voltage
D None of the above

Answer : C

19. When the emitter terminal of a UJT is open, the resistance between the
base terminals is generally ______.

A. High
B. Low
C. Extremely low
D. None of the above

Answer: A

20. The SCS is turned on with the cathode gate, and turned off with the anode
gate.

A. True
B. False

Answer: B

21. UJTs can only be used to trigger Triacs, not SCRs.

A. True
B. False

Answer: B
 22. The SUS is also known as a Shockley diode.

A. True
B. False

Answer: B

23. When a UJT is turned ON, the resistance between emitter terminal and
lower base terminal _____________.

A. Remains the same

B. Is decreased
C. Is increased
D. None of the above

Answer: B

24. A UJT is sometimes called __________ diode.

A. Low resistance
B. High resistance
C. Single-base
D. Double-base

Answer: D

25. The Triac is similar to an SCR, but it provides conduction for both
halves of the ac wave.

A. True
B. False

Answer: A