3 Pin Cases SMD Codes 2024 Sample

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SMD-codes DATABOOK

3 - pins
SMD-codes.
3-pin cases active SMD
semiconductor components
marking codes.

• 47.000 semiconductor components SMD-codes:


• Diodes, Transistors, Integrated circuits
• Case pin assignment
• Pinout
• Marking style
• Schematic diagram
• Additional SMD info
• Case drawings
• Manufacturers

2024-2025 EDITION

http://www.turuta.md
Eugeniu Turuta Martin Turuta

SMD-codes.
3-pin cases active SMD semiconductor components
marking codes.

DATABOOK

Chisinau, Toronto, 2024-2025


http://www.turuta.md
CONTENTS

Abbreviation ........................................................................................................ 3

Section 1. 3-pin cases SMD semiconductor components ................................... 6

Section 2. Conventional case drawing. ................................................................ 667

Section 3. Pinout (table) ...................................................................................... 669

Section 4. SMD-codes marking style .................................................................. 682

Section 5. SMD-codes marking atribute .............................................................. 686

Section 6. Additional production data info ............................................................ 692

Section 7. Case drawings ................................................................................... 699

Section 8. Sample schematic diagram ................................................................ 703

Section 9. Manufacturers name, logo and web page URL .................................... 705
Introduction

At earlier eighties began a trend to replace a traditional through-hole technique with the surface mounted
technology (SMT) using surface mounted devices (SMD). The SMT, although intended in principle for automatic
manufacturing only expand more and more, even into a hobby world. This trend will continue, because many new
components are available in SMD versions only. The SMT technique opens advantages and new applications through
miniaturising of the components and increasing of reliability. The industry standard unfortunately allows that most of
the SMD components does not have a clear description. Since a tiny size of the components, they are labelled with
one, two or more character or graphic SMD code. Thus it is necessary to take into account that the colour and (or)
placing of alphanumeric or graphic symbols are also important. Therefore a sure identification of the components is
impossible without appropriate technical documentation. Moreover the polarity and pin - outs of different components
could be not identified without data sheets.AA0001
Identifying the manufacturers type number of an SMD device from the package code can be a difficult task.
Unfortunately, each device code is not necessarily unique.
For various manufacturers it is possible to place different devices in the same case with the same SMD-code.
For example, with a 6H SMD-code in a SOT-23 case might be either a npn-transistor BC818 (CDIL) or a capacitance-
diode FMMV2104 (Zetex) or a n-channel jFET transistor MMBF5486 (Motorola) or a pnp-digital transistor MUN2131
(Motorola) or a pnp-digital transistor UN2117 (Panasonic) or a CMOS-integrated circuit- voltage detector with reset
output R3131N36EA (Ricoh). Even the same manufacturer may use the same code for different devices.
To identify a particular SMD device, is necessary to identify the manufacturer, package type and note the SMD
code printed on the device.
The identification of the manufacturer is possible only if on the case are printed the manufacturer’s logos, but it
not always happens. Besides, sometimes, it is possible to determine the manufacturer with indirect tags. Many
recent ON Semiconductor devices have a small superscript letter after the device code, such as SAC (this smaller
letter is merely a month of manufacture code). Infineon devices usually have a lower case 's' (ATs, LOs). NXP
(Philips) devices usually have a lower case 'p' (AHp, Z1p, pB0) or '-' (DQ-, -ZS) for the devices made in Hong Kong,
't' (tT9, Y7t) for the devices made in Malaysia, “W” (WT9, Y7W) for the devices made in China. In section 19 are
submitted the logos of the SMD devices manufacturers.
The package type is another problem for the identification of SMD devices. The different manufacturers can
designate identical cases concerning by the various standards (or concerning by the internal system). Besides, the
various cases can have an identical kind (form) and differ only by sizes. This distinction of sizes so it is not enough,
that can be is measured only by special measuring devices.
Compliance with the name and type of cases from different manufacturers is solved by applying in the column
“Case” an equivalent type name for equivalent cases.
In addition to SMD-code, uper case may be put padding alpha-numeric information (usually by another font or
size of characters, also may be by other arrangement). Relationship position of the SMD-code and padding informa-
tion have defined as style and show in the column “Style”
In the following tables sections the SMD semiconductor components - irrelevant as to whether it is dealing with
transistors, diodes, integrated circuits etc. are placed in separate tables according to numbers of terminals and (or)
type of cases and are listed in alpha-numeric order by SMD-codes.

Column 1 (“SMD-Code”) LDR-IC LED driver integrated circuit


Lin-IC Linear integrated circuit
Column 2 (“Type”) LVR-IC Linear voltage regulator integrated circuit
The type designations correspond to those of the re- LVR/Vdet-IC Linear voltage regulator/Voltage detector
spective manufacturer documentations.
combined integrated circuit
Column 3 (“Function”) MMIC Monolithic Microwave Integrated Circuit
Short definition of the semiconductor component. -MOSFET Metal-Oxide-Semiconductor FET
Used abbreviations: -MESFET MEtal-Semiconductor FET
BM-IC Battery Management integrated circuit n- n-channel junction transistor
BR Bridge Rectifier n/p- n-channel and p-channel transistors area
C-diode Capacitance diode (varactor, varicap) Op-IC Operational amplifier integrated circuit
CMOS-Log CMOS logic integrated circuit p- p-channel junction transistor
Comp-IC Voltage comparator integrated circuit PDS-IC Power distrubution switch integrated cir-
DC/DC-IC DC/DC voltage converter integrated circuit cuit
ESDP-diode ElectroStatic Discharge Protection diode PHEMT Pseudomorphic high electron mobility
ESD-Prot ElectroStatic Discharge Protection thyris- transistors
tor PIN-diode Diode with a wide, undoped intrinsic semi-
-FET Field Effect Transistor conductor region
HEMT High electron mobility transistors PSW-IC Power Switch IC
H-IC Hall-effect sensor integrated circuit Si-diode Silicon diode
HSPS-IC High-side power switch integrated circuit SiGe-diode Silicon/Germanium diode
IGBT Insulated Gate Bipolar Transistor Si-npn Silicon npn transistor
IGBT+Di Insulated Gate Bipolar Transistor with Si-n/p Silicon npn and pnp transistors area
antiparallel diode Si-npn-Darl Silicon npn Darlington transistor
2 - pins
SECTION 1
3-pin case SMD semiconductor components
SMD
code Type Function Case Style Short description Atr A.d. Pin Sch Mnf

- ELM7548CEB Vdet-IC SC-70 3d 4.8V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
- ELM7548NEB Vdet-IC SC-70 3d 4.8V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
# ELM7541CEB Vdet-IC SC-70 3d 4.1V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
# ELM7541NEB Vdet-IC SC-70 3d 4.1V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
* ELM7546CEB Vdet-IC SC-70 3d 4.6V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
* ELM7546NEB Vdet-IC SC-70 3d 4.6V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
* ELM7547NEB Vdet-IC SC-70 3d 4.7V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
.038 MC1038 n-MOSFET SC-89-3 3a GP, 20V, 750mA, 300mW, 0.24Ω(600mA), 3.8/252us - - 16fh - Mep
/ ELM7554CEB Vdet-IC SC-70 3d 5.4V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
/ ELM7554NEB Vdet-IC SC-70 3d 5.4V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
+ ELM7547CEB Vdet-IC SC-70 3d 4.7V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
+FZVC LM4040CEM3-5.0/V+T Vref-IC SOT-23 3a uPower, Precision, Shunt, 5.00V±0.5% - - 16dk RF1 Max
+P2 BFR92A Si-npn SOT-23 3a UHF-A-Band, 20V, 25mA, 300mW, B>40, >5GHz - - 16ta - Vs
+P5 BFR92AR Si-npn SOT-23 3a UHF-A-Band, 20V, 25mA, 300mW, B>40, >5GHz - - 16te - Vs
+R2 BFR93A Si-npn SOT-23 3a UHF-A-Band, 15V, 30mA, 300mW, B>40, >5GHz - - 16ta - Sil
+R5 BFR93AR Si-npn SOT-23 3a UHF-A-Band, 15V, 30mA, 300mW, B>40, >5GHz - - 16te - Sil
< ELM7553CEB Vdet-IC SC-70 3d 5.3V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
< ELM7553NEB Vdet-IC SC-70 3d 5.3V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
= ELM7544CEB Vdet-IC SC-70 3d 4.4V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
= ELM7544NEB Vdet-IC SC-70 3d 4.4V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
> ELM7549CEB Vdet-IC SC-70 3d 4.9V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
> ELM7549NEB Vdet-IC SC-70 3d 4.9V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
0 AX6904IA Vdet-IC SC-70-3L 3be 4.25V±1.5%, +Reset PPO - 27 16vdb VD7 Axl
0. ELM7552CEB Vdet-IC SC-70 3d 5.2V±2%, +Reset PPO B23a 23 16vdb VD7 Elm
0. ELM7552NEB Vdet-IC SC-70 3d 5.2V±2%, +Reset ODO B23a 06 16vdb VD6 Elm
00 AP8822C-40GA Vdet-IC SOT-23 3ba 4.0V±2%, -Reset PPO, Rdt=200ms, H-free B05e - 16vdc VD7 Anw
00 AP8822C-40GT Vdet-IC SC-70 3ba 4.0V±2%, -Reset PPO, Rdt=200ms, H-free B05e - 16vdc VD7 Anw
00 AP8822C-40PA Vdet-IC SOT-23 3ba 4.0V±2%, -Reset PPO, Rdt=200ms B05 - 16vdc VD7 Anw
00 AP8822C-40PT Vdet-IC SC-70 3ba 4.0V±2%, -Reset PPO, Rdt=200ms B05 - 16vdc VD7 Anw
00 EC95810C40B1N Vdet-IC SOT-23-3L 3dd 4.0V±2%, -Reset PPO, Rdt=200ms B38 24 16vdc VD7 Ecm
00 EC95810C40C1N Vdet-IC SC-70-3L 3dd 4.0V±2%, -Reset PPO, Rdt=200ms B38 24 16vdc VD7 Ecm
00 ELM7510CBB Vdet-IC SOT-23 3d 1.0V±2%, +Reset PPO B23 23 16vdb VD7 Elm
00 ELM7510NBB Vdet-IC SOT-23 3d 1.0V±2%, +Reset ODO B23 06 16vdb VD6 Elm
00 ST7400 n-MOSFET SOT-323 3bc Sw, 30V, 2.8A, 1.25W, 77 mΩ(2.8A), 2.5/20ns - - 16fh - Sta
005 SSTPAD5 Si-diode SOT-23 3a Dual, Low-leakage, 10mA, 350mW, Vf<1.5V(5mA), Ir=5pA, 2pF - - 16fj - Six
01 AP8822C-41GA Vdet-IC SOT-23 3ba 4.1V±2%, -Reset PPO, Rdt=200ms, H-free B05e - 16vdc VD7 Anw
01 AP8822C-41GT Vdet-IC SC-70 3ba 4.1V±2%, -Reset PPO, Rdt=200ms, H-free B05e - 16vdc VD7 Anw
01 AP8822C-41PA Vdet-IC SOT-23 3ba 4.1V±2%, -Reset PPO, Rdt=200ms B05 - 16vdc VD7 Anw
01 AP8822C-41PT Vdet-IC SC-70 3ba 4.1V±2%, -Reset PPO, Rdt=200ms B05 - 16vdc VD7 Anw
01 EC95810C41B1N Vdet-IC SOT-23-3L 3dd 4.1V±2%, -Reset PPO, Rdt=200ms B38 24 16vdc VD7 Ecm
01 EC95810C41C1N Vdet-IC SC-70-3L 3dd 4.1V±2%, -Reset PPO, Rdt=200ms B38 24 16vdc VD7 Ecm
01 ELM7511CBB Vdet-IC SOT-23 3d 1.1V±2%, +Reset PPO B23 23 16vdb VD7 Elm
01 ELM7511NBB Vdet-IC SOT-23 3d 1.1V±2%, +Reset ODO B23 06 16vdb VD6 Elm
01 GF2301 p-MOSFET-e SOT-23 3a GP, 20V, 2.3A, 1.25W, Rds=95mΩ(2.3A), 5/95ns - - 16fh - Gse
01 PDTA143EE Si-pnp-Digi SOT-416 3a Sw, 50V, 100mA, 150mW, R1/R2=4.7k/4.7k - - 16ta - Nxp
01 PDTA143EK Si-pnp-Digi SC-59 3f Sw, 50V, 100mA, 250mW, R1/R2=4.7k/4.7k B43 - 16ta - Nxp
010 SO918R Si-npn SOT-23 3a VHF/UHF, 15V, 50mA, B>20, 600MHz - - 16te - Ste
010 SSTPAD10 Si-diode SOT-23 3a Dual, Low-leakage, 10mA, 350mW, Vf<1.5V(5mA), Ir=10pA, 2pF - - 16fj - Six
01A APR3001-15A Vdet-IC SOT-23 3b 1.5V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01A RA101C Si-pnp-Digi SOT-23 3a Sw, 50V, 100mA, 200mW, 250MHz, R1/R2=47k/47k - - 16ta - San
01B APR3001-17A Vdet-IC SOT-23 3b 1.75V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01C APR3001-23A Vdet-IC SOT-23 3b 2.32V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01C RC101C Si-npn-Digi SOT-23 3a Sw, 50V, 100mA, 200mW, 250MHz, R1/R2=47k/47k - - 16ta - San
01D APR3001-26A Vdet-IC SOT-23 3b 2.63V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01E APR3001-29A Vdet-IC SOT-23 3b 2.93V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01F APR3001-30A Vdet-IC SOT-23 3b 3.08V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01G APR3001-39A Vdet-IC SOT-23 3b 3.9V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01H APR3001-43A Vdet-IC SOT-23 3b 4.38V±1.5%, -Reset PPO - - 16vdb VD7 Anp
01J APR3001-46A Vdet-IC SOT-23 3b 4.63V±1.5%, -Reset PPO - - 16vdb VD7 Anp
02 2N7002 n-MOSFET SOT-23 3ba TMOS, 60V, 115mA, 225mW, <7.5Ω(500mA), 20/40ns B19 14 16fh - Frm
02 2N7002 n-MOSFET SOT-23 3ba TMOS, 60V, 115mA, 225mW, <7.5Ω(500mA), 20/40ns B19b 14 16fh - Sec
02 2N7002 n-MOSFET SOT-23 3ba TMOS, 60V, 115mA, 225mW, <7.5Ω(500mA), 20/40ns, H-free B19a 14 16fh - Frm
02 AP8822C-42GA Vdet-IC SOT-23 3ba 4.2V±2%, -Reset PPO, Rdt=200ms, H-free B05e - 16vdc VD7 Anw
02 AP8822C-42GT Vdet-IC SC-70 3ba 4.2V±2%, -Reset PPO, Rdt=200ms, H-free B05e - 16vdc VD7 Anw
02 AP8822C-42PA Vdet-IC SOT-23 3ba 4.2V±2%, -Reset PPO, Rdt=200ms B05 - 16vdc VD7 Anw
02 AP8822C-42PT Vdet-IC SC-70 3ba 4.2V±2%, -Reset PPO, Rdt=200ms B05 - 16vdc VD7 Anw
02 BSX39 Si-npn SOT-23 3a Sw, Driver, 45V, 0.2A, <12/18ns - - 16te - Mot
02 EC95810C42B1N Vdet-IC SOT-23-3L 3dd 4.2V±2%, -Reset PPO, Rdt=200ms B38 24 16vdc VD7 Ecm
02 EC95810C42C1N Vdet-IC SC-70-3L 3dd 4.2V±2%, -Reset PPO, Rdt=200ms B38 24 16vdc VD7 Ecm
02 ELM7512CBB Vdet-IC SOT-23 3d 1.2V±2%, +Reset PPO B23 23 16vdb VD7 Elm
7
SMD
code Type Function Case Style Short description Atr A.d. Pin Sch Mnf

ZVp PDTD114EU Si-npn-Digi SOT-323 3a Sw, 50V, 500mA, 300mW, R1/R2=10k/10k - - 16ta - NxH
ZVt PDTD114EU Si-npn-Digi SOT-323 3a Sw, 50V, 500mA, 300mW, R1/R2=10k/10k - - 16ta - NxM
ZVW PDTD114EU Si-npn-Digi SOT-323 3a Sw, 50V, 500mA, 300mW, R1/R2=10k/10k - - 16ta - NxC
ZW 55GN01CA Si-pnp CP 3a RF, 20V, 70mA, 200mW, B=100..180, 4.5GHz - - 16ta - Ons
ZW CZMK9V1 Z-diode SOT-23 3a Dual, 9.1V±5%, Izt=5mA, 300mW - - 16dg - Cdi
ZW TZT9V1CW Z-diode SOT-23 3a Dual, 8.5..9.6V, Izt=5mA, Zzt=15Ω, 300mW - - 16dg - Ttr
ZWA KN4403S Si-pnp SOT-23 3f GP, Sw, 40V, 600mA, 350mW, B=100..300, 250MHz - - 16ta - Kec
ZX CZMK10 Z-diode SOT-23 3a Dual, 10V±5%, Izt=5mA, 300mW - - 16dg - Cdi
ZX TZT10CW Z-diode SOT-23 3a Dual, 9.4..10.6V, Izt=5mA, Zzt=20Ω, 300mW - - 16dg - Ttr
ZY 2SA1182-Y Si-pnp SC-59 3a AF, 35V, 500mA, 150mW, B=120..240, 200MHz - - 16ta - Tos
ZY 2SA1588-Y Si-pnp SC-70 3a AF-Drv, Sw, 35V, 500mA, 100mW, B=120..240, 200MHz - - 16ta - Tos
ZY 2SC4047 Si-npn-Digi CP 3a Sw, 50V, 100mA, 200mW, 250MHz, B>70, R1/R2=10k/47k - - 16ta - San
ZY CZMK11 Z-diode SOT-23 3a Dual, 11V±5%, Izt=5mA, 300mW - - 16dg - Cdi
ZY KTA2015-Y Si-pnp USM 3f AF, Sw, 35V, 500mA, 100mW, B=120..240, 200MHz - - 16ta - Kec
ZY TZT11CW Z-diode SOT-23 3a Dual, 10.4..11.6V, Izt=5mA, Zzt=20Ω, 300mW - - 16dg - Ttr
ZY- 2SK3000 n-MOSFET SOT-23 3a V-MOS, LogL, 40V, 1A, <0.5Ω(0.45A), In, Rgate - - 16fh - Ren
ZZ CZMK12 Z-diode SOT-23 3a Dual, 12V±5%, Izt=5mA, 300mW - - 16dg - Cdi
ZZ TZT12CW Z-diode SOT-23 3a Dual, 11.4..12.7V, Izt=5mA, Zzt=25Ω, 300mW - - 16dg - Ttr
ZZ- 2SK2980 n-MOSFET MPAK 3a V-MOS, LogL, 30V, 1A, <0.28Ω(0.5A) B09 - 16fh - Ren
ZZ1 2BZX84C4V7A Z-diode SOT-23 3a 4.4..5.0V, Zzt=80Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ1 CMPZDA4V7 Z-diode SOT-23 3a Dual, 4.7V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ2 2BZX84C5V1A Z-diode SOT-23 3a 4.8..5.4V, Zzt=60Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ2 CMPZDA5V1 Z-diode SOT-23 3a Dual, 5.1V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ3 2BZX84C5V6A Z-diode SOT-23 3a 5.2..6.0V, Zzt=40Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ3 CMPZDA5V6 Z-diode SOT-23 3a Dual, 5.6V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ4 2BZX84C6V2A Z-diode SOT-23 3a 5.8..6.6V, Zzt=10Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ4 CMPZDA6V2 Z-diode SOT-23 3a Dual, 6.2V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ5 2BZX84C6V8A Z-diode SOT-23 3a 6.4..7.2V, Zzt=15Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ5 CMPZDA6V8 Z-diode SOT-23 3a Dual, 6.8V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ6 2BZX84C7V5A Z-diode SOT-23 3a 7.0..7.9V, Zzt=15Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ6 CMPZDA7V5 Z-diode SOT-23 3a Dual, 7.5V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ7 2BZX84C8V2A Z-diode SOT-23 3a 7.7..8.7V, Zzt=15Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ7 CMPZDA8V2 Z-diode SOT-23 3a Dual, 8.2V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ8 2BZX84C9V1A Z-diode SOT-23 3a 8.5..9.6V, Zzt=15Ω, Izt=5mA, 225mW B14 - 16dc - Dic
ZZ8 CMPZDA9V1 Z-diode SOT-23 3a Dual, 9.1V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZ9 2BZX84C10A Z-diode SOT-23 3a 9.4..10.6V, Zzt=20Ω, Izt=5mA, 225mW - - 16dc - Dic
ZZ9 CMPZDA10V Z-diode SOT-23 3a Dual, 10V±2.5%, If=10mA, 350mW - - 16df - Cen
ZZL UM810ADP Vdet-IC SC-70-3 3ca 2.1V±1%, +Reset PPO - - 16vdc VD7 Uns
ZZM UM810AEP Vdet-IC SC-70-3 3ca 2.0V±1%, +Reset PPO - - 16vdc VD7 Uns
ZZR HWD809REX Vdet-IC SC-70 3a 2.63V±2%, -Reset PPO - - 16vdc VD7 Csm
ZZY UM810ZP Vdet-IC SC-70-3 3ca 2.32V±1%, +Reset PPO - - 16vdc VD7 Uns

666
SECTION 2
Conventional case drawings. Pin assignment

667
16 18 19 76

88 121 122 139

668
PIN 1 PIN2 PIN3 PIN4 PIN5 PIN6 PIN7 PIN8

SECTION 3
Pinout (table)

669
PIN 1 PIN2 PIN3 PIN4 PIN5 PIN6 PIN7 PIN8
a0 GND Output Vcc +Input -Input - - -
a1 GND GND Input GND GND Vcc/Output - -
a2 N/C Anode Cathode N/C Adjust - - -
a3 CE GND Vinput Voutput Adjust N/C - -
a4 CE Vinput Voutput Switch GND Feedback - -
a5 No data. See datash. See sch - - - - -
a7 CE GND SSC Vinput Voutput - - -
a8 Test GND Tdet N/C Vcc - - -
a9 Tdet GND Test Vcc - - - -
aa Input GND Vcc/Output GND - - - -
aa* A1=CE/MODE A3=Voutput B2=Lx C1=Vinput C3=GND - - -
ab Input GND GND Output GND Vcc - -
ab* A1=CE/MODE A3=Feedb. B2=Lx C1=Vinput C3=GND - - -
ac Vcc GND Input GND GND Output GND GND
ac* A1-CE A2=Vinput B1=GND B2=Voutput - - - -
ad Input GND Vcc Output GND - - -
ae Input Vcc GND Output GND GND - -
af N/C Vinput N/C GND N/C Voutput N/C N/C
ag Contact Contact N/C - - - - -
ah Emitter Emitter Base Emitter Emitter Collector - -
ai GND Vcc Input Output - - - -
aj GND Vcc/Vout GND Input - - - -
ak N/C Cathode Anode - - - - -
am Vcc/Output GND Input GND - - - -
an Output GND Input Vcc GND - - -
ao Cath.(Anode) N/C Cath.(Anode) An.(Cath.) - - - -
ap Cathode N/C Cathode Anode - - - -
aq Contact N/C Contact - - - - -
ar Contact Contact - - - - - -
as Emitter Emitter N/C Base Collector Collector Collector Collector
at Cathode Gate Anode - - - - -
au CE SS Voutput Vinput GND Vbias - -
av Vbias GND Vinput Voutput SS CE - -
aw CE Ilim Voutput Vinput GND Vbias - -
ax Vbias GND Vinput Voutput Ilim CE - -
ax* A1=CE1 A2=Voutput1 B1=GND B2=Vinput C1=CE2 C2=Voutput2 - -
ay* A1=Voutput2 A2=Vcc A3=Voutput1 B1=CE2 B2=GND B3=CE1 - -
az Vinput N/C Voutput N/C N/C N/C GND CE
b0 IN1 POS Vin Vout CE GND IN2 NEG
b1 Terminal Gate Terminal - - - - -
ba Anode/Cath. Anode/Cath. - - - - - -
ba* A1=GND A2=Voutput B1=CE B2=Vinput - - - -
bb Cathode1 Cathode2 Cathode3 Anode3 Anode2 Anode1 - -
bb* A1=GND A2=CE B1=Voutput B2=Vinput - - - -
bc* A1=Vinput A2=Voutput B1=CE B2=GND - - - -
bd Cathode Cathode Anode - - - - -
bd* A1=GND A2=Vcc B1=Reset B2=MR - - - -
be* A1=CE A3=Cb B2=GND C1=Voutput C3=Vinput - - -
bf* A1=Output L A2=GND A3=Output R B1=Input L B3=Input R C1=Shutdown C2=Vcc C3=Cext
bg Cathode1 Cathode2 Anode2 N/C Anode1 - - -
bg* A1=Voutput A2=Vinput B1=Adj B2=CE C1=GND C2=Vbias - -
bh Anode1 Com. Cath. Anode2 Anode3 Anode4 - - -
bh* A1=GND A3=CE B2=Cb C1=Voutput C3=Vinput - - -
bi Anode Cathode Anode Anode Cathode Anode - -
bj* A1=Voutput A2=Vinput B2=GND C1=CE C2= Vbias - - -
bk* A1=Voutput A2=Vinput B1=GND B2=CE
bm1 N/C Cout Dout GND V+ V- - -
bm2 V- V+ GND Dout Cout - - -
bn OVP Vinput CE A GND N/C Feedback Switching P GND
bp Cathode Cathode Anode Anode Cathode Cathode - -
bq GND Voutput Lx - - - - -
br GND Voutput Ext - - - - -
670
SECTION 4
3-pin cases SMD-code marking style

682
3a 3aa 3ab 3ac

3ad 3ae 3af 3ag

3ah 3ai 3aj 3b

3ba 3bb 3bc 3bd

3be 3bf 3bg 3bh

3bi 3bj 3c 3ca

683
SECTION 5
3-pin cases SMD-code atribute

686
B01 B02 B02a B04

B04a B04b B04c B04d

B04e B04f B04g B04h

B05 B05a B05b B05c

B05d B05e B05f B05g

B05h B05i B05j B05k

687
SECTION 6
Additional production data info

692
Besides SMD code, the manufacturers can place additional information such as internal production lot number,
traceability code, data of production, assembly location etc. The adittional info is an arbitral position and arbitral
content (depending of the manufacturer) and can be alphanumeric symbol (symbols) or graphic symbol.
Below we present some additional info.

Lot number.
Marking example:
Manufacturer: Elm (ELM Technology Corporation):
Rules 1 (for ODO voltage detectors)
Symbol 1 - A to Z(I, O, X excepted) <0A <A0
Symbol 2 - 0 to 9
Rules 2 (for PPO voltage detectors) SMD-code SMD-code
Symbol 1 - 0 to 9 (ELM7553CEB) Lot number (ELM7553NEB) Lot number
Symbol 2 - A to Z(I, O, X excepted) Marking example:

Manufacturer: Tor (Torex Semiconductor LTD):


VBA01
01~09, 0A~0Z, 11~9Z, A1~A9, AA~AZ, B1~ZZ repeated,
(G, I, J, O, Q, W excluded.) * No character inversion used. SMD-code
(XC9227D1ACM) Lot number

Production data

Manufacturer: Anw (Anwell Semiconductor Corp.)


Dot above product code: Lot Code: Dot under product code: Year Code:

1 • 17 • • 2003
2 • 18 • • 2004 •
3 • • 19 • • • 2005 • •
4 • 20 • • 2006 • •
5 • • 21 • • • 2007 •
6 • • 22 • • • 2008 • •
7 • • • 23 • • • • 2009 • •
8 • 24 • • 2010 • • •
9 • • 25 • • •
10 • • 26 • • • Marking example:
11 • • • 27 • • • •
12 • • 28 • • • 0033V
13 • • • 29 • • • • Lot code- 24
14 • • • 30 • • • • SMD-code
15 • • • • 31 • • • • • (AP8800-33PV) Year code- 2007
16 •
Manufacturer: Ape (Advanced Power Electronics Corp.) Marking example:
Code Year
YY 2004, 2008, 2012
YY 2003, 2007, 2011 RRAYY
YY 2002, 2006, 2010
YY 2001, 2005, 2009 SMD-code Data code
(APE8838AY) (year 2011)
Manufacturer: Axl (AXElite Technology Co., Ltd)
Code Year Code Week Marking example:
7 2007 A...Z 1...26
8 2008 a...z 27...52
9 2009 LAAa
A 2010
B 2011 SMD-code Data code
C 2012 (AX6604ACA) (year 2010, week 27)

Manufacturer: Di (Diodes Inc.)


Y : Year : 0~9XXX
W : Week : A~Z : 1~26 week; a~z : 27~52 week; z represents 52 and 53 week

693
SECTION 7
Case drawings

699
1-2S1A
1-1Q1A 1-2S1B
2-1L1A 1-2S1C 2-1B1A 2-1E1A

2-2H1A
2-2H1B 2-2HA1A 2-2U1A 2-3S1A

3-LLMM 3MM 3-TUSMM 3-USMM

2025 CMPAK
CP CPA EM3 Minit3-F1
CPH3 MCP3 Mini3-G1 SC-59A EMT3

EMT3F fSM
F5T ESM SOT-1123 MCP SC-75
MCPH3 SON1408-3 SOT-923 MPAK SC-75A

SC-70
SC-59 SC-70-3
MFPAK NMini3-R1-B SMT3 SC-70-3L
700
SECTION 8
Sample schematic diagram

703
DC2 RF1 RF2
DC5

VD6 VD7 VD9 VD10

VR20

VR1 VR2

704
SECTION 9
Manufacturers name, logo and web page URL

705
Aat- Advanced Analog Technology
http://www.aatech.com.tw/index.aspx

Abl- ABLIC Inc.


https://www.ablicinc.com/en/semicon/

Ad- Analog Devices


http://www.analog.com

Adt- ADDtek
http://www.addmtek.com/Index.htm

Afs- Analog Future Chip Co., Ltd.


http://www.afsemi.com/

Agi- Agilent Technologies


www.semiconductor.agilent.com

Aic- Analog Integrations Corporation


http://www.analog.com.tw

Ali- Alliance Semiconductor


http://www.alsc.com

All- Allegro MicroSystems Inc.


http://www.allegromicro.com

Alt- Aolittel Technology Co., Ltd


http://www.aolittel.com

Ame- AME, Inc.


www.ame.com.tw

Ams- AMOS Technology Limited


http://www.amos-tech.com

Amz- Amazing Microelectronic


http://www.amazingIC.com

Ana- Anachip Corp.


www.anachip.com.tw

Anb- Anbon Semiconductor Co., Ltd.


http://www.anbonsemi.com

Anp- Anpec Electronics Corp.


www.anpec.com.tw

Ans- AnaSem Inc.


http://www.anasem.net/

Ant- Advanced Analogic Technologies, Inc.


http://www.analogictech.com

Anv- Anova Technologies Co. Ltd


http://anova-semi.com/

Anw- Anwell Semiconductor Corp.


http://www.ansc.com.tw/

Aom- Alpha & Omega Semiconductor


http://www.aosmd.com/
706
Yea- Yeashin.Technologogy Co., Ltd
http://www.yeashin.com/

Yen- Yenyo Technology Co., Ltd.


http://www.yenyo.com.tw/

Ynt- Yint Electronics Co., Ltd.


http://www.yint.com.cn

Zbo- Zibo Micro Commercial Components Corp.


http://www.zbmcc.com/en/

Zbs- Zhide Electronics Co., Ltd


http://www.senocn.com/

Zhd- Zibo Seno Electronic Engineering Co., Ltd.


http://www.cz-zhide.com/

Zlg- Zilog, Inc.


http://www.zilog.com/

Zow- Zowie Technology Corporation


http://www.zowie.com.tw/

Zx- Zetex plc.


http://www.zetex.com

722
© 2024-2025 Copyright Eugeniu Turuta
© 2024-2025 Copyright Martin Turuta
Toronto, © 2024-2025 edition
Chisinau, © 2024-2025 edition

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