MMBF170

N-CHANNEL ENHANCEMENT MODE MOSFET

Features Mechanical Data

 Low On-Resistance  Case: SOT23
 Low Gate Threshold Voltage  Case Material: Molded Plastic. UL Flammability Classification
 Low Input Capacitance Rating 94V-0
 Fast Switching Speed  Moisture Sensitivity: Level 1 per J-STD-020
 Low Input/Output Leakage  Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208
 Halogen and Antimony Free. “Green” Device (Note 3)  Terminal Connections: See Diagram
 Qualified to AEC-Q101 Standards for High Reliability  Weight: 0.008 grams (approximate)

D
SOT23

S G S

Top View Equivalent Circuit Top View

Ordering Information (Note 4)

Part Number Case Packaging
MMBF170-7-F SOT23 3000/Tape & Reel
MMBF170-13-F SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

K6Z = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2014)
M = Month (ex: 9 = September)

Chengdu A/T Site Shanghai A/T Site

Date Code Key

Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

MMBF170 1 of 5 May 2014

Document number: DS30104 Rev. 14 - 2 www.diodes.com © Diodes Incorporated
 MMBF170

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS  1.0MΩ VDGR 60 V
Gate-Source Voltage Continuous 20
VGSS V
Pulsed 40
Drain Current (Note 5) Continuous 500
ID mA
Pulsed 800

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
300 mW
Total Power Dissipation (Note 5) PD
1.80 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 K/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current IDSS   1.0 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS   10 nA VGS = 15V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V VDS = VGS, ID = 250μA
  5.0 VGS = 10V, ID = 200mA
Static Drain-Source On-Resistance RDS (ON) Ω
  5.3 VGS = 4.5V, ID = 50mA
Forward Transconductance gFS 80   mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss  22 40 pF
Output Capacitance Coss  11 30 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss  2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Time ton   10 ns VDD = 25V, ID = 0.5A,
Turn-Off Time toff   10 ns VGS = 10V, RGEN = 50Ω
Notes: 5. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.

MMBF170 2 of 5 May 2014

Document number: DS30104 Rev. 14 - 2 www.diodes.com © Diodes Incorporated
 MMBF170

1.0 7

6
ID, DRAIN-SOURCE CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE
0.8
5

RDS(ON), NORMALIZED
0.6
4

0.4 3

2
0.2
1

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Fig. 1 On-Region Characteristics Fig. 2 On-Resistance vs. Drain Current

2.0 6
DRAIN-SOURCE ON-RESISTANCE

DRAIN-SOURCE ON-RESISTANCE
5
1.5
RDS(ON), NORMALIZED

RDS(ON), NORMALIZED
4

1.0 3

2
0.5
1

0 0
-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18
Tj, JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs. Junction Temperature Fig. 4 On-Resistance vs. Gate-Source Voltage

400

350
PD, POWER DISSIPATION (mW)

300

250

200

150

100

50

0
0 2550 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature

MMBF170 3 of 5 May 2014

Document number: DS30104 Rev. 14 - 2 www.diodes.com © Diodes Incorporated
 MMBF170

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
B C C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K M
K1 K 0.903 1.10 1.00
D K1 - - 0.400
J F L L 0.45 0.61 0.55
G
M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Z
C Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
X E

MMBF170 4 of 5 May 2014

Document number: DS30104 Rev. 14 - 2 www.diodes.com © Diodes Incorporated
 MMBF170

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Copyright © 2014, Diodes Incorporated

www.diodes.com

MMBF170 5 of 5 May 2014

Document number: DS30104 Rev. 14 - 2 www.diodes.com © Diodes Incorporated