BSS8402DW

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID  Low On-Resistance
Device BVDSS RDS(ON) Max
TA = +25°C  Low Gate Threshold Voltage
Q1 60V 13.5Ω @ VGS = 10V 115mA  Low Input Capacitance
Q2 -50V 10Ω @ VGS = -5V -130mA  Fast Switching Speed
 Low Input/Output Leakage
 Complementary Pair
Description  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This MOSFET has been designed to minimize the on-state resistance  Halogen and Antimony Free. “Green” Device (Note 3)
(RDS(ON)) and yet maintain superior switching performance, making it  Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.  PPAP Capable (Note 4)

Applications Mechanical Data

 General Purpose Interfacing Switch  Case: SOT363
 Power Management Functions  Case Material: Molded Plastic. “Green” Molding Compound. UL
 Analog Switch Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
 Terminal Connections: See Diagram
 Weight: 0.006 grams (Approximate)

SOT363
D1 G2 S2

Q1 Q2

S1 G1 D2

Top View
Top View Internal Schematic

Ordering Information (Note 5)

Part Number Compliance Case Packaging
BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel
BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel
BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel
BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

KNP = Product Type Marking Code

YM or YM= Date Code Marking
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)

Date Code Key

Year 2003 2004 2005 2006 ~ 2018 2019 2020 2021 2022 2023 2024 2025 2026
Code P R S T ~ F G H I J K L M N

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

BSS8402DW 1 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

Maximum Ratings – Total Device (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Maximum Ratings N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS  1.0MΩ VDGR 60 V
Gate-Source Voltage Continuous ±20
VGSS V
Pulsed ±40
Drain Current (Note 6) Continuous 115
Continuous @ +100°C ID 73 mA
Pulsed 800

Maximum Ratings P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS  20KΩ VDGR -50 V
Gate-Source Voltage Continuous VGSS 20 V
Drain Current (Note 6) Continuous ID -130 mA
Note: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated’s suggested pad layout document,
which can be found on our website at http://www.diodes.com/package-outlines.html.

BSS8402DW 2 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

Electrical Characteristics N-CHANNEL – Q1, 2N7002 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C 1.0
IDSS   µA VDS = 60V, VGS = 0V
@ TC = +125°C 500
Gate-Body Leakage IGSS   ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) 1.0  2.5 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C 3.2 7.5 VGS = 5.0V, ID = 0.05A
RDS(ON)  Ω
@ TJ = +125°C 4.4 13.5 VGS = 10V, ID = 0.5A
On-State Drain Current ID(ON) 0.5 1.0  A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80   mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss  22 50 pF
Output Capacitance Coss  11 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss  2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON)  7.0 20 ns VDD = 30V, ID = 0.2A,
Turn-Off Delay Time tD(OFF)  11 20 ns RL = 150Ω, VGEN = 10V, RGEN = 25Ω

Electrical Characteristics P-CHANNEL – Q2, BSS84 Section (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS -50   V VGS = 0V, ID = -250µA
  -1 µA VDS = -50V, VGS = 0V, TJ = +25°C
Zero Gate Voltage Drain Current IDSS   -2 µA VDS = -50V, VGS = 0V, TJ = +125°C
  -100 nA VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage IGSS   10 nA VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(TH) -0.8  -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS(ON)   10 Ω VGS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05   S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss   45 pF
Output Capacitance Coss   25 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss   12 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON)  10  ns VDD = -30V, ID = -0.27A,
Turn-Off Delay Time tD(OFF)  18  ns RGEN = 50Ω, VGS = -10V

Note: 7. Short duration pulse test used to minimize self-heating effect.

BSS8402DW 3 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

N-CHANNEL – 2N7002 Section

1.0 7
Tj = 25°C

6
ID, DRAIN-SOURCE CURRENT (A)

RDS(ON), STATIC DRAIN-SOURCE

0.8
5

ON-RESISTANCE ()
0.6
4

0.4 3

2
0.2
1

0 0
0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0
VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1 On-Region Characteristics Figure 2 On-Resistance vs. Drain Current
3.0 6
RDS(ON), STATIC DRAIN-SOURCE

RDS(ON), STATIC DRAIN-SOURCE 5

2.5
ON-RESISTANCE ()

ON-RESISTANCE ()

2.0 3

2
1.5

VGS = 10V, 1
ID = 200mA

1.0 0
-55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3 On-Resistance vs. Junction Temperature Figure 4 On-Resistance vs. Gate-Source Voltage

10 250
VDS = 10V
9
VGS, GATE-SOURCE CURRENT (V)

PD, POWER DISSIPATION (mW)

8 200

6 150

4 100

2 50

0 0
0 0.2 0.4 0.6 0.8 1 0
25 50 75 100 125 150 175 200
ID, DRAIN CURRENT (A) TA, AMBIENT TEMPERATURE (°C)
Figure 5 Typical Transfer Characteristics Figure 6 Max Power Dissipation vs. Ambient Temperature

BSS8402DW 4 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW
1000 2
)V

VGS(TH), GATE THRESHOLD VOLTAGE (V)

(
)A E
IDSS, DRAIN LEAKAGE CURRENT (nA)

G 1.8
n A
( T
T L
N TA = 150°C O
E V
R 100 1.6
R D
U L
C O
H
E S
G E 1.4
A TA = 125°C R
K H
A TA = 85°C T
E E
L T 1.2
N 10 A
AI G
R TA = 25°C , )H
D
,S
T
( 1
S
S G
D V
I
1 0.8
5 10 15 20 25 30 35 40 45 50 55 60 -25 -50 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 8 Gate Threshold Variation vs. Junction Temperature
Figure 7 Typical Drain-Source Leakage Current vs. Voltage

P-CHANNEL – BSS84 Section

-600 -1.0
TA = 25°C
ID, DRAIN-SOURCE CURRENT (mA)

-500
-0.8
ID, DRAIN CURRENT (A)

-400
-0.6

-300

-0.4
-200

-0.2
-100

0 -0.0
0 -1 -2 -3 -4 -5 0 -1 -2 -3 -4 -5 -6 -7 -8
V DS, DRAIN-SOURCE
VDS, DRAIN-SOURCE (V) (V)
VOLTAGE V GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 9 Drain-Source Current vs. Drain-Source Voltage Figure 10 Drain Current vs. Gate-Source Voltage

10 15
VGS = -10V
9 ID = -0.13A
RDS(ON), STATIC DRAIN-SOURCE

8 12
RDS, ON-RESISTANCE ()
ON-RESISTANCE ( )

6 9

4 6

2 3
TA = 125°C
1
TA = 25 °C
0 0
0 -1 -2 -3 -4 -5 -50 -25 0 25 50 75 100 125 150
VGS, GATE
VGS, GATE TO SOURCE
TO SOURCE (V) (V)
VOLTAGE TJ, JUNCTION TEMPERATURE (癈 (°C))
Figure 11 On-Resistance vs. Gate-Source Voltage Figure 12 On-Resistance vs. Junction Temperature
BSS8402DW 5 of 8 March 2018
Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW
25.0 1000

)A

-IDSS, DRAIN LEAKAGE CURRENT (nA)

20.0 n
(
T
RDS, ON-RESISTANCE ()

VGS = -3.5V N TA = 150°C

VGS = -3V E
R
R 100
15.0 U
C
VGS = -5V E
G TA = 125°C
VGS = -4V A
K
10.0 VGS = -6V A
E TA = 85°C
L
N 10
IA
R TA = 25°C
5.0 D
VGS = -8V ,S
S
VGS = -10V D
I-
0.0
-0.0 -0.2 -0.4 -0.6 -0.8 1.0 1
5 10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT (A)
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 13 On-Resistance vs. Drain Current
Figure 14 Typical Drain-Source Leakage Current vs. Voltage
2
)V
-VGS(TH), GATE THRESHOLD VOLTAGE (V)

(
E
G 1.8
A
T
L
O
V 1.6
D
L
O
H
S 1.4
E
R
H
T
E 1.2
T
A
G
, )H
T 1
(
S
G
V
-
0.8
-50 -25 0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 15 Gate Threshold Variation vs. Junction Temperature

BSS8402DW 6 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363

E E1
SOT363
Dim Min Max Typ
A1 0.00 0.10 0.05
A2 0.90 1.00 0.95
b 0.10 0.30 0.25
F
c 0.10 0.22 0.11
b D 1.80 2.20 2.15
E 2.00 2.20 2.10
E1 1.15 1.35 1.30
D
e 0.650 BSC
F 0.40 0.45 0.425
L 0.25 0.40 0.30
A2
a 0° 8° --
All Dimensions in mm

c a
e L
A1

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363

Value
Dimensions
(in mm)
C 0.650
Y1 G G 1.300
X 0.420
Y 0.600
Y1 2.500
Y

BSS8402DW 7 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
 BSS8402DW

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2018, Diodes Incorporated

www.diodes.com

BSS8402DW 8 of 8 March 2018

Document number: DS30380 Rev. 22 - 2 www.diodes.com © Diodes Incorporated
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Diodes Incorporated:
BSS8402DW-7-F