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    PLQ1 Datasheet STM

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    asam youssef

    Copyright:

    © All Rights Reserved
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    PLQ1 Datasheet STM

    Uploaded by

    asam youssef
    3 views5 pages

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    PLQ1-datasheet-stm

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    3 views5 pages

    PLQ1 Datasheet STM

    Uploaded by

    asam youssef

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 5

    PLQ 08

    PLQ 1

    FAST RECOVERY RECTIFIER DIODES

    VERY FAST FORWARD AND REVERSE


    RECOVERY DIODES

    SUITABLE APPLICATION
    SWTCHING POWER TRANSISTORS DRIVER
    CI R CU I T S ( SERI E S DI O D ES IN
    ANTISATURATION CLAMP SPEED UP DIODE
    IN DISCRETE DARLINGTON...) F 126
    (Plastic)
    THYRISTORS GATE DRIVER CIRCUITS
    HIGH FREQUENCY RECTIFICATION

    ABSOLUTE RATINGS (limiting values)


    Symbol Parameter Value Unit
    IFRM Repetive Peak Forward Current tp ≤ 20µs 20 A

    IF (AV) Average Forward Current* Ta = 25°C 1 A


    δ = 0.5
    IFSM Surge non Repetitive Forward Current tp = 10ms 20 A
    Sinusoidal
    Ptot Power Dissipation* Ta = 25°C 1.7 W

    Tstg Storage and Junction Temperature Range - 40 to 125 °C


    Tj

    TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 °C


    from Case

    Symbol Parameter PLQ 08 PLQ 1 Unit


    VRRM Repetitive Peak Reverse Voltage 80 100 V
    VRSM Non Repetitive Peak Reverse Voltage 80 100 V

    THERMAL RESISTANCE
    Symbol Parameter Value Unit
    Rth (j - a) Junction-ambient* 60 °C/W

    * On infinite heatsink with 10mm lead length.

    November 1994 1/5


    PLQ 08/PLQ 1

    ELECTRICAL CHARACTERISTICS
    STATIC CHARACTERISTICS
    Synbol Test Conditions Min. Typ. Max. Unit
    IR Tj = 25°C VR = VRRM 10 µA

    Tj = 100°C 0.5 mA

    VF Tj = 25°C IF = 1A 1.1 V

    RECOVERY CHARACTERISTICS
    Symbol Test Conditions Min. Typ. Max. Unit
    trr Tj = 25°C IF = 1A diF/dt = - 50A/µs 50 ns
    VR = 30V See figure 12
    tfr Tj = 25°C IF = 1A tr = 20ns 50 ns
    Measured at 1.1 x VF

    2/5
    PLQ 08/PLQ 1

    Figure 1. Power losses versus average Figure 2. Allowable DC current versus


    current. ambient temperature.

    Figure 3. Non repetitive surge peak current Figure 4. Transient thermal impedance
    versus number of cycles. junction-ambient. Printed circuit versus pulse
    duration (L = 10 mm).

    Figure 5. Voltage drop versus forward current. Figure 6. Voltage drop versus forward current.

    3/5
    PLQ 08/PLQ 1

    Figure 7. Capacitance versus reverse voltage F ig u re 8. T hermal resis tan ce


    applied. junction-ambient versus lead length.

    Figure 9. Recovery time versus diF/dt. Figure 10. Peak reverse current versus diF/dt.

    Figure 11. Dynamic parameters versus Figure 12. Measurement of trr (fig. 8) and IRM
    junction temperature. (fig. 10).

    4/5
    PLQ 08/PLQ 1

    PACKAGE MECHANICAL DATA


    F 126 (Plastic)

    B A B /C
    O

    note 1 E E note 1

    /D
    O /D
    O
    note 2

    DIMENSIONS
    REF. Millimeters Inches NOTES
    Min. Max. Min. Max.
    A 6.05 6.35 0.238 0.250
    1 - The lead diameter ∅ D is not controlled over zone E
    B 26 1.024
    2 - The minimum axial lengh within which the device may be
    ∅C 2.95 3.05 0.116 0.120
    placed with its leads bent at right angles is 0.59"(15 mm)
    ∅D 0.76 0.86 0.029 0.034
    E 1.27 0.050

    Cooling method: by convection (method A)


    Marking: type number
    Weight: 0.4g

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
    license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
    in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
    SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
    written approval of SGS-THOMSON Microelectronics.

    © 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.


    SGS-THOMSON Microelectronics GROUP OF COMPANIES
    Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
    Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.

    5/5

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