Kexin-1n5817ws C489146
Kexin-1n5817ws C489146
Kexin-1n5817ws C489146
Transistors
Schottky Diodes
1N5817WS ~ 1N5819WS
Ƶ Features SOD-323
ƽ Low power loss, high efficiency
ƽ High current capability
ƽ Low forward voltage drop
1 2
ƽ High Surge Capability
Top View
PIN DESCRIPTION
PIN DESCRIPTION
1 Cathode
2 Anode
Ta = 25ć 1
Reverse Voltage Leakage Current IR mA
Ta = 100ć 10
Typical Junction Capacitance CJ 110 pF
Junction Temperature TJ 125
ć
Storage Temperature range Tstg -55 to 125
Ƶ Marking
NO. 1N5817WS 1N5818WS 1N5819WS
Marking SJ SK SL
1
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SMD Type Diodes
Transistors
Schottky Diodes
1N5817WS ~ 1N5819WS
Ƶ Typical Characterisitics
Fig.1 Forward Current Derating Curve Fig.2 Typical Reverse Characteristics
1.0
10 3 T J =125°
C
0.8
0.6 10 2 T J =75°
C
0.4
T J =25°
C
10 1
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0 10 0
25 50 75 100 125 150 0 20 40 60 80 100
Ambient Temperature (°
C) Percent of Rated Peak Reverse Voltage˄˅
1.0 500
Instaneous Forward Current (A)
200
0.5
C
5°
C
5°
100
=2
12
TJ
TJ =
50
0.2
20
0.1 10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 1 10 100
30 100
Transient Thermal Impedance˄ °
20 10
15
10 1
05
00 0.1
1 10 100 0.01 0.1 1 10 100
Number of Cycles at 50Hz t, Pulse Duration˄sec˅
2
2
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SMD Type Diodes
Transistors
Schottky Diodes
1N5817WS ~ 1N5819WS
Ƶ Package Outline Dimensions
Note:
1.Controlling dimension: in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only.
3
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