® STPS1L40M

LOW DROP POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

IF(AV) 1A
VRRM 40 V
A
Tj (max) 150°C
VF(max) 0.40 V C

FEATURES AND BENEFITS STmite

■ Very small conduction losses (DO216-AA)
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop for higher efficiency
and extented battery life
■ Low thermal resistance Table 2: Order Code
■ Avalanche capability specified Part Number Marking
STPS1L40M 1L4
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 40 V
IF(RMS) RMS forward voltage 2 A
IF(AV) Average forward current Tc = 140°C δ = 0.5 1 A
IFSM Surge non repetitive forward current 10 ms sinusoidal 50 A
PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 1200 W
Tstg Storage temperature range -65 to + 150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) 10000 V/µs
dPtot 1
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
dTj Rth ( j – a )

September 2004 REV. 3 1/6

STPS1L40M

Table 4: Thermal Resistance

Symbol Parameter Value Unit
Rth(j-c)* Junction to case 20 °C/W
Rth(j-l)* Junction to ambient 250 °C/W
* Mounted with minimum recommended pad size, PC board FR4.

Table 5: Static Electrical Characteristics

Symbol Parameter Tests conditions Min. Typ Max. Unit
Tj = 25°C 0.021 0.063
VR = VRRM
Tj = 85°C 1.3 4.0
IR * Reverse leakage current mA
Tj = 25°C VR = 20V 0.007 0.021
Tj = 85°C 0.49 1.5
Tj = 25°C 0.40 0.46
IF = 1A
Tj = 85°C 0.35 0.40
VF * Forward voltage drop V
Tj = 25°C 0.52 0.60
IF = 3A
Tj = 85°C 0.50 0.58
Pulse test: * tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF (RMS)

Figure 1: Conduction losses versus average Figure 2: Average forward current versus
current ambient temperature (δ = 0.5)
PF(AV)(W) IF(AV)(A)
0.55 1.1
δ = 0.2
δ = 0.05 δ = 0.1 δ = 0.5 Rth(j-a)=Rth(j-c)
0.50 1.0
0.45 0.9
0.40 δ=1 0.8
0.35 0.7
0.30 0.6
Rth(j-a)=270°C/W
0.25 0.5
0.20 0.4
0.15 0.3
T
0.10 0.2
0.05 0.1 Tamb(°C)
IF(AV)(A) δ=tp/T tp
0.00 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 25 50 75 100 125 150

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 STPS1L40M

Figure 3: Normalized avalanche power Figure 4: Normalized avalanche power

derating versus pulse duration derating versus junction temperature

PARM(tp) PARM(tp)
PARM(1µs) PARM(25°C)
1 1.2

0.1 0.8

0.6

0.01 0.4

0.2

tp(µs) Tj(°C)
0.001 0

0.01 0.1 1 10 100 1000 25 50 75 100 125 150

Figure 5: Non repetitive surge peak forward Figure 6: Relative variation of thermal
current versus overload duration (maximum impedance junction to ambient versus pulse
values) duration
IM(A) Zth(j-c)/Rth(j-c)
20 1.0

18 0.9

16 0.8

14 0.7

12 0.6
TC=25°C δ = 0.5
10 0.5
TC=75°C
8 0.4

6 0.3 δ = 0.2
TC=125°C
T
4 0.2
IM δ = 0.1

2 t 0.1 Single pulse

δ=0.5
t(s) tp(s) δ=tp/T tp
0 0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E-04 1.E-03 1.E-02 1.E-01

Figure 7: Reverse leakage current versus Figure 8: Reverse leakage current versus
reverse voltage applied (typical values) junction temperature (typical values)
IR(mA) IR(mA)
1.E+03 1.E+03
VR=40V

1.E+02 Tj=150°C 1.E+02

Tj=125°C
1.E+01 1.E+01
Tj=100°C

1.E+00 1.E+00
Tj=75°C

Tj=50°C
1.E-01 1.E-01

Tj=25°C
1.E-02 1.E-02

VR(V) Tj(°C)
1.E-03 1.E-03
0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150

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STPS1L40M

Figure 9: Junction capacitance versus reverse Figure 10: Forward voltage drop versus
voltage applied (typical values) forward current

C(pF) IFM(A)
1000 2.0
F=1MHz
VOSC=30mVRMS 1.8
Tj=25°C Tj=85°C
1.6 (maximum values)

1.4

1.2
Tj=85°C
(typical values)
100 1.0

0.8

0.6 Tj=25°C
(maximum values)

0.4

0.2 VFM(V)
VR(V)
10 0.0
1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6

Figure 11: Thermal resistance junction to

ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
Rth(j-a)(°C/W)
250

200

150

100

50

S(mm²)
0
0 20 40 60 80 100 120 140 160 180 200

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Figure 12: STmite Package Mechanical Data

DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
L3
D A 0.85 1.00 1.15 0.033 0.039 0.045
A1 -0.05 0.05 -0.002 0.002
b2 b b 0.40 0.65 0.016 0.025
b2 0.70 1.00 0.027 0.039
H c 0.10 0.25 0.004 0.010
L2 D 1.75 1.90 2.05 0.069 0.007 0.081
L R E
E 1.75 1.90 2.05 0.069 0.007 0.081
H 3.60 3.75 3.90 0.142 0.148 0.154
C A
L 0.50 0.63 0.80 0.020 0.025 0.031
A1
R1
0° to 6° L2 1.20 1.35 1.50 0.047 0.053 0.059
L3 0.50 0.019
ref ref
R 0.07 0.003
R1 0.07 0.003

Figure 13: Foot Print Dimensions (in millimeters)

1.82

1.38

2.03 1.10 0.75

0.50 0.71

Table 6: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode
STPS1L40M 1L4 STmite 15.5 mg 12000 Tape & reel

Table 7: Revision History

Date Revision Description of Changes
Jul-2003 2A Last update.
STmite package dimensions reference A1 change: from
13-Sep-2004 3
blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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