SM6T Series

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Vishay General Semiconductor
Surface-Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package Available

• Ideal for automated placement

• Glass passivated chip junction
• Available in unidirectional and bidirectional
• 600 W peak pulse power capability with a
10/1000 μs waveform
Available
• Excellent clamping capability
SMB (DO-214AA) • Low inductance
Cathode Anode • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
(unidirectional) (bidirectional) • AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or base P/NHM3
• Material categorization: for definitions of compliance
LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc?99912
3D 3D TYPICAL APPLICATIONS
3D Models
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
PRIMARY CHARACTERISTICS computer, industrial, automotive, and telecommunication.
VWM 5.80 V to 188 V
VBR unidirectional 6.8 V to 220 V MECHANICAL DATA
VBR bidirectional 6.8 V to 220 V Case: SMB (DO-214AA)
PPPM 600 W Molding compound meets UL 94 V-0 flammability rating
PD 5.0 W Base P/N-E3 - RoHS-compliant, commercial grade
IFSM (unidirectional only) 100 A Base P/N-M3 - halogen-free, RoHS-compliant, commercial
TJ max. 150 °C grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Polarity Unidirectional, bidirectional
Base P/NHM3_X - halogen-free, RoHS-compliant, and
Package SMB (DO-214AA)
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
DEVICES FOR BIDIRECTION APPLICATIONS Terminals: matte tin plated leads, solderable per
For bidirectional devices use CA suffix (e.g. SM6T12CA). J-STD-002 and JESD 22-B102
Electrical characteristics apply in both directions. E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: for unidirectional types the band denotes cathode
end, no marking on bidirectional types

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) PPPM 600 W
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) IPPM See next table A
Power dissipation on infinite heatsink at TA = 50 °C PD 5.0 W
Peak forward surge current 10 ms single half sine-wave unidirectional only (2) IFSM 100 A
Operating junction and storage temperature range TJ, TSTG -65 to +150 °C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

Revision: 14-Sep-2023 1 Document Number: 88385

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SM6T Series
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

MAXIMUM MAXIMUM MAXIMUM
BREAKDOWN
DEVICE TEST STAND-OFF REVERSE CLAMPING CLAMPING
MARKING
VOLTAGE
VOLTAGE VOLTAGE αT
VBR AT IT (2) CURRENT VOLTAGE LEAKAGE
TYPE (1) CODE VC AT IPPM VC AT IPPM MAX.
(V) IT VWM AT VWM
(10/1000 μs) (8/20 μs) 10-4/°C
(mA) (V) ID (3)
UNI BI MIN. MAX. (μA) (V) (A) (V) (A)
SM6T6V8A KE7 KE7 6.45 7.14 10 5.80 1000 10.5 57.0 13.4 298 5.7
SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1
SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3
SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8
SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4
SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8
SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2
SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4
SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6
SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7
SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59 68 9.8
SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9
SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0
SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4
SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6
SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8
SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8
SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8
Notes
(1) For bidirectional devices add suffix “CA”
(2) V
BR measured after IT applied for 300 μs square wave pulse
(3) For bi-polar devices with V
WM = 10 V or under, the ID limit is doubled

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient air (1) RθJA 100
°C/ W
Typical thermal resistance, junction to lead RθJL 20
Note
(1)
Mounted on minimum recommended pad layout

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM6T10A-E3/52
0.106 52 750 7" diameter plastic tape and reel
SM6T10A-M3/52
SM6T10A-E3/5B
0.106 5B 3200 13" diameter plastic tape and reel
SM6T10A-M3/5B
SM6T10AHE3_B/H (1)
0.106 H 750 7" diameter plastic tape and reel
SM6T10AHM3_B/H (1)
SM6T10AHE3_B/I (1)
0.106 I 3200 13" diameter plastic tape and reel
SM6T10AHM3_B/I (1)
Note
(1)
AEC-Q101 qualified

Revision: 14-Sep-2023 2 Document Number: 88385

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

100 6000
Measured at
Zero Bias

CJ - Junction Capacitance (pF)

PPPM - Peak Pulse Power (kW)

1000
10

VR, Measured at
100 Stand-Off
1
Voltage VWM
0.2 x 0.2" (5.0 x 5.0 mm) Uni-Directional TJ = 25 °C
Copper Pad Areas Bi-Directional f = 1.0 MHz
Vsig = 50 mVp-p
0.1 10
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 1 10 100 200
td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V)

Fig. 1 - Peak Pulse Power Rating Curve Fig. 4 - Typical Junction Capacitance

100 100
Peak Pulse Power (PPP) or Current (IPP)

Transient Thermal Impedance (°C/W)

Derating in Percentage, %

75
10

50

1.0
25

0 0.1
0 25 50 75 100 125 150 175 200 0.001 0.01 0.1 1 10 100 1000
TJ - Initial Temperature (°C) t - Pulse Duration (s)

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 5 - Typical Transient Thermal Impedance

150 200
TJ = 25 °C
tr = 10 µs 8.3 ms Single Half Sine-Wave
IPPM - Peak Pulse Current, % IRSM

Pulse Width (td)

Peak Forward Surge Current (A)

is defined as the Point Uni-Directional Only

where the Peak Current
Peak Value 100
decays to 50 % of IPPM
IPPM
100

Half Value - IPP

IPPM 2

50
10/1000 µs Waveform
as defined by R.E.A.

td
0 10
0 1.0 2.0 3.0 4.0 1 10 100
t - Time (ms) Number of Cycles at 60 Hz

Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current

Revision: 14-Sep-2023 3 Document Number: 88385

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SM6T Series
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Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMB (DO-214AA)
Cathode Band
Mounting Pad Layout

0.085 (2.159) MAX.

0.086 (2.20) 0.155 (3.94)
0.077 (1.95) 0.130 (3.30)
0.086 (2.18) MIN.

0.180 (4.57)
0.160 (4.06) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.220 (5.59) REF.

0.096 (2.44)
0.084 (2.13)

0.060 (1.52) 0.008 (0.2)

0.030 (0.76) 0 (0)
0.220 (5.59)
0.205 (5.21)

Revision: 14-Sep-2023 4 Document Number: 88385

For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023 1 Document Number: 91000