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    2SC3852

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    ahumakynewage

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    © All Rights Reserved
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    2SC3852

    Uploaded by

    ahumakynewage
    4 views2 pages

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    Copyright:

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    4 views2 pages

    2SC3852

    Uploaded by

    ahumakynewage

    Copyright:

    © All Rights Reserved
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    of 2

    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC3852

    DESCRIPTION
    ·Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= 60V(Min)
    ·DC Current Gain-
    : hFE= 200(Min)@ IC= 0.5A

    APPLICATIONS
    ·Driver for solenoid and motor, series regulator and
    general purpose applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 80 V

    VCEO Collector-Emitter Voltage 60 V

    VEBO Emitter-Base Voltage 6 V

    IC Collector Current-Continuous 3 A

    IB Base Current-Continuous 1 A

    Collector Power Dissipation


    PC 25 W
    @TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc Website：www.iscsemi.cn
    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC3852

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V

    ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA

    IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA

    hFE DC Current Gain IC= 0.5A; VCE= 4V 200

    COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF

    fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz

    Switching Times

    ton Turn-On Time 0.8 μs

    IC= 1A; IB1= 15mA; IB2= -30mA;


    tstg Storage Time 3.0 μs
    VCC= 20V; RL= 20Ω

    tf Fall Time 1.2 μs

    isc Website：www.iscsemi.cn 2

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