2SK2188

Download as pdf or txt
Download as pdf or txt
You are on page 1of 2

INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SD1619

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 25V (Min)
·Complement to Type 2SB1119
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for LF Amp Electronic Governor applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 25 V

VCEO Collector-Emitter Voltage 25 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 1 A

ICM Collector Current-Peak 2 A

Collector Power Dissipation


PC 0.5 W
@ Tc=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SD1619

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 25 V

V(BR)CBO Collector-Base Breakdown Voltage IC=-10uA ,IE=0 25 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 0.3 V

VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.2 V

ICBO Collector Cutoff Current VCB= 20V; IE= 0 0.1 μA

IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA

hFE-1 DC Current Gain IC= 50mA; VCE= 2V 100 560

hFE-2 DC Current Gain IC= 1A; VCE= 2V 40

fT Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V 180 MHz

COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 15 pF

 hFE -1Classifications

R S T U

100-200 140-280 200-400 280-560

isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark

You might also like