Inchange - Semiconductor 2SD1138 Datasheet

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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1138

DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
·Wide Area of Safe Operation
·Complement to Type 2SB861

APPLICATIONS
·Designed for low frequency power amplifier color TV
vertical deflection output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 200 V

VCEO Collector-Emitter Voltage 150 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 2 A

ICM Collector Current-Peak 5 A

Collector Power Dissipation


1.8
@ Ta=25℃
PC W
Collector Power Dissipation
30
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -45~150 ℃

isc website:www.iscsemi.cn 1
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1138

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 150 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 6 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 3.0 V

VBE(on) Base-Emitter On Voltage IC= 50mA ; VCE= 4V 1.0 V

ICBO Collector Cutoff Current VCB= 120V ; IE= 0 1 μA

hFE-1 DC Current Gain IC= 50mA ; VCE= 4V 60 200

hFE-2 DC Current Gain IC= 500mA ; VCE= 10V 60

COB Output Capacitance IE= 0; VCB= 100V; ftest= 1.0MHz 20 pF

‹ hFE-1 Classifications

B C

60-120 100-200

isc website:www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SD1138

isc website:www.iscsemi.cn 3

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