mn1526r Mn1526o mn1526p

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SPTECH Product Specification

SPTECH Silicon NPN Power Transistor MN1526

DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 260V(Min)
·Complement to Type MP1526

APPLICATIONS
·Power amplifier applications
·Recommend for 150W high fidelity audio frequency amplifier
output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 260 V

VCEO Collector-Emitter Voltage 260 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 15 A

IB Base Current-Continuous 4 A

Collector Power Dissipation


PC 150 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

SPTECH website:www.superic-tech.com 1
SPTECH Product Specification
SPTECH Silicon NPN Power Transistor MN1526

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 260 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A 3.0 V

VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V 1.5 V

ICBO Collector Cutoff Current VCB= 260V ; IE= 0 5 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA

hFE-1 DC Current Gain IC= 1A ; VCE= 5V 40 140

hFE-2 DC Current Gain IC= 7A ; VCE= 5V 35

COB Output Capacitance IE=0 ; VCB= 10V;f= 1.0MHz 250 pF

fT Current-Gain—Bandwidth Product IC=1A ; VCE= 5V 60 MHz

 hFE-1 Classifications

R O P

40-80 50-100 70-140

SPTECH website:www.superic-tech.com 2

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