Features

• Fast Read Access Time - 150 ns

• Fast Byte Write - 200 µs or 1 ms
• Self-Timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
• – Automatic Clear Before Write
Direct Microprocessor Control
• – DATA POLLING
Low Power
– 30 mA Active Current 16K (2K x 8)
• – 100 µA CMOS Standby Current
High Reliability
4 5
Parallel
– Endurance: 10 or 10 Cycles
– Data Retention: 10 Years
• 5V ± 10% Supply EEPROMs
• CMOS & TTL Compatible Inputs and Outputs
• JEDEC Approved Byte Wide Pinout
• Commercial and Industrial Temperature Ranges
AT28C16
Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology. (continued)
Pin Configurations
Pin Name Function
A0 - A10 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PLCC PDIP, SOIC

Top View Top View

A7
NC
NC
DC
VCC

NC
WE

A7 1 24 VCC
4
3
2
1
32
31
30

A6 2 23 A8
A5 3 22 A9
A6 5 29 A8
A4 4 21 WE
A5 6 28 A9
A4 7 27 NC A3 5 20 OE
A3 8 26 NC A2 6 19 A10
A2 9 25 OE A1 7 18 CE
A1 10 24 A10 A0 8 17 I/O7
A0 11 23 CE I/O0 9 16 I/O6
NC 12 22 I/O7 I/O1 10 15 I/O5
I/O2 11 14 I/O4
I/O2 15
GND 16
DC 17
18
I/O4 19

I/O0 13 21 I/O6
I/O5 20
I/O1 14

GND 12 13 I/O3
Rev. 0540B–10/98
I/O3

Note: PLCC package pins 1 and 17

are DON’T CONNECT.
1
The AT28C16 is accessed like a static RAM for the read or The CMOS technology offers fast access times of 150 ns
write cycles without the need of external components. Dur- at low power dissipation. When the chip is deselected the
ing a byte write, the address and data are latched inter- standby current is less than 100 mA.
nally, freeing the microprocessor address and data bus for Atmel’s 28C16 has additional features to ensure high qual-
other operations. Following the initiation of a write cycle,
ity and manufacturability. The device utilizes error correc-
the device will go to a busy state and automatically clear
tion internally for extended endurance and for improved
and write the latched data using an internal control timer.
data retention characteristics. An extra 32 bytes of
The end of a write cycle can be determined by DATA
EEPROM are available for device identification or tracking.
POLLING of I/O7. Once the end of a write cycle has been
detected, a new access for a read or a write can begin.

Block Diagram

Absolute Maximum Ratings*

Temperature Under Bias ................................ -55°C to +125°C *NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
Storage Temperature ..................................... -65°C to +150°C age to the device. This is a stress rating only and
functional operation of the device at these or any
All Input Voltages (including NC Pins) other conditions beyond those indicated in the
with Respect to Ground ................................... -0.6V to +6.25V operational sections of this specification is not
All Output Voltages implied. Exposure to absolute maximum rating
-0.6V to VCC + 0.6V conditions for extended periods may affect
with Respect to Ground ............................. device reliability
Voltage on and A9
OE
with Respect to Ground ................................... -0.6V to +13.5V

2 AT28C16
 AT28C16

Device Operation
READ: The AT28C16 is accessed like a Static RAM. When cycle, an attempted read of the data being written results
CE and OE are low and WE is high, the data stored at the in the complement of that data for I/O7 (the other outputs
memory location determined by the address pins is are indeterminate). When the write cycle is finished, true
asserted on the outputs. The outputs are put in a high data appears on all outputs.
impedance state whenever CE or OE is high. This dual line WRITE PROTECTION: Inadvertent writes to the device
control gives designers increased flexibility in preventing are protected against in the following ways: (a) VC C sense
bus contention.
—if V CC is below 3.8V (typical) the write function is
BYTE WRITE: Writing data into the AT28C16 is similar to
inhibited; (b) VCC power on delay—once V CC has reached
writing into a Static RAM. A low pulse on the WE or CE
3.8V the device will automatically time out 5 ms (typical)
input with OE high and CE or WE low (respectively) ini- before allowing a byte write; and (c) write inhibit—holding
tiates a byte write. The address location is latched on the any one of OE low, CE high or WE high inhibits byte write
last falling edge of WE (or CE); the new data is latched on cycles.
the first rising edge. Internally, the device performs a self- CHIP CLEAR: The contents of the entire memory of the
clear before write. Once a byte write has been started, it
AT28C16 may be set to the high state by the CHIP CLEAR
will automatically time itself to completion. Once a pro-
operation. By setting CE low and OE to 12 volts, the chip
gramming operation has been initiated and for the duration
is cleared when a 10 msec low pulse is applied to WE.
of tWC, a read operation will effectively be a polling opera-
D E V I C E I DE NT I FI C A TI ON : An extra 32 bytes of
tion.
EEPROM memory are available to the user for device
FAST BYTE WRITE: The AT28C16E offers a byte write iden-tification. By raising A9 to 12 ± 0.5V and using
time of 200 ms maximum. This feature allows the entire address locations 7E0H to 7FFH the additional bytes may
device to be rewritten in 0.4 seconds. be written to or read from in the same manner as the
DATA POLLING: The AT28C16 provides DATA POLLING regular memory array.
to signal the completion of a write cycle. During a write

3
DC and AC Operating Range
AT28C16-15
Operating Com. 0°C - 70°C
Temperature (Case) Ind. -40°C - 85°C

VCC Power Supply 5V ± 10%

Operating Modes
Mode CE OE WE I/O
Read V V V D
IL IL IH OUT
(2)
Write V IL V IH V IL D
IN
Standby/Write Inhibit V X(1) X High Z
IH
Write Inhibit X X V
IH

Write Inhibit X V X
IL

Output Disable X V X High Z

IH

Chip Erase V IL V (3) V IL High Z

H

Notes: 1. X can be VIL or VIH.

2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V

DC Characteristics
Symbol Parameter Condition Min Max Units
I Input Load Current 10 mA
LI VIN = 0V to VCC + 1V
I Output Leakage Current 10 mA
LO VI/O = 0V to VCC
I 100 mA
SB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1.0V
I VCC Standby Current TTL = 2.0V to VCC + 1.0V Com. 2 mA
SB2
CE Ind. 3 mA

I VCC Active Current AC f = 5 MHz; IOUT = 0 mA Com. 30 mA

CC

CE = VIL Ind. 45 mA
V Input Low Voltage 0.8 V
IL
V Input High Voltage 2.0 V
IH
V Output Low Voltage .4 V
OL IOL = 2.1 mA
V Output High Voltage 2.4 V
OH IOH = -400 mA

4 AT28C16
 AT28C16

AC Read Characteristics
AT28C16-15
Symbol Parameter Min Max Units
t Address to Output Delay 150 ns
ACC
(1)
t
CE CE to Output Delay 150 ns
(2)
t
OE OE to Output Delay 10 70 ns

tDF(3)(4) CE or OE High to Output Float 0 50 ns

t Output Hold from OE, CE or Address, whichever occurred first 0 ns
OH

(1)(2)(3)(4)
AC Read Waveforms

Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address
change without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.

Input Test Waveforms Output Test Load

and Measurement Level

tR, tF < 20 ns

Pin Capacitance
f = 1 MHz, T = 25°C
(1)
Symbol Typ Max Units Conditions
C 4 6 pF
IN VIN = 0V
C 8 12 pF
OUT VOUT = 0V
Note: 1. This parameter is characterized and is not 100% tested.

5
AC Write Characteristics
Symbol Parameter Min Typ Max Units
t ,t Address, OE Set-up Time 10 ns
AS OES
t Address Hold Time 50 ns
AH
t Write Pulse Width (WE orCE) 100 1000 ns
WP
t Data Set-up Time 50 ns
DS
t ,t Data, OE Hold Time 10 ns
DH OEH
t ,t
CS CH CE to WE and WE to CE Set-up and Hold Time 0 ns

t Write Cycle Time AT28C16 0.5 1.0 ms

WC
AT28C16E 100 200 ms

AC Write Waveforms
WE Controlled

CE Controlled

6 AT28C16
 AT28C16
(1)
Polling Characteristics

Data
Symbol Parameter Min Typ Max Units
t Data Hold Time 10 ns
DH
t
OEH OE Hold Time 10 ns
t (2) ns
OE OE to Output Delay
t Write Recovery Time 0 ns
WR

Notes: 1. These parameters are characterized and not 100% tested.

2. See AC Characteristics.

Data Polling Waveforms

Chip Erase Waveforms

tS = tH = 1 msec (min.)
tW = 10 msec (min.)
VH = 12.0V ± 0.5V

7
8 AT28C16
 AT28C16
(1)
Ordering Information

t
ACC ICC (mA)
(ns) Active Standby Ordering Code Package Operation Range
150 30 0.1 AT28C16(E)-15JC 32J Commercial
AT28C16(E)-15PC 24P6 (0°C to 70°C)
AT28C16(E)-15SC 24S
45 0.1 AT28C16(E)-15JI 32J Industrial
AT28C16(E)-15PI 24P6 (-40°C to 85°C)
AT28C16(E)-15SI 24S
Notes: 1. See Valid Part Numbers table below.
2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by
the faster 150 ns TAA offering.
3. The 28C16 ceramic package offerings have been removed. New designs should utilize the 28C256 ceramic offerings.

Valid Part Numbers

The following table lists standard Atmel products that can be ordered.
Device Numbers Speed Package and Temperature Combinations
AT28C16 15 JC, JI, PC, PI, SC, SI
AT28C16E 15 JC, JI, PC, PI, SC, SI
AT28C16 - W

Die Products
Reference Section: Parallel EEPROM Die Products

Package Type
32J 32 Lead, Plastic J-Leaded Chip Carrier (PLCC)
24P6 24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
24S 24 Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
W Die
Options
Blank Standard Device: Endurance = 10K Write Cycles; Write Time = 1 ms
E High Endurance Option: Endurance = 100K Write Cycles; Write Time = 200 ms

9
Packaging Information
32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC) 24P6, 24-Lead, 0.600” Wide, Plastic Dual Inline
Dimensions in Inches and (Millimeters) Package (PDIP)
JEDEC STANDARD MS-018 AA Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-011 AA
.045(1.14) X 45° PIN NO. 1 .025(.635) X 30° - 45° 1.27(32.3)

.012(.305) 1.24(31.5) PIN

IDENTIFY
.008(.203) 1
.553(14.0) .530(13.5) .566(14.4)

.490(12.4)
.032(.813) .547(13.9) .530(13.5)
.021(.533)
.026(.660) .595(15.1)
.585(14.9) .013(.330)
.090(2.29)
.050(1.27) TYP .030(.762) 1.100(27.94) REF MAX
.300(7.62) REF .015(3.81)
.220(5.59) .005(.127)
MAX MIN
.430(10.9) .095(2.41)
.390(9.90) .060(1.52) SEATING
AT CONTACT .140(3.56) PLANE .065(1.65)
POINTS .120(3.05) .161(4.09)
.015(.381)
.125(3.18) .022(.559)
.065(1.65)
.014(.356)
.110(2.79) .041(1.04)
.022(.559) X 45° MAX (3X) .090(2.29) .630(16.0)

.453(11.5) .590(15.0)
0
REF
.447(11.4) .012(.305) 15
.495(12.6) .008(.203)
.485(12.3) .690(17.5)
.610(15.5)
24S, 24-Lead, 0.300” Wide, Plastic Gull Wing Small

Outline (SOIC)
Dimensions in Inches and (Millimeters)
.020(.508)

.013(.330)
.299(7.60) .420(10.7)

.291(7.39) .393(9.98)
PIN 1 ID
.050(1.27) BSC

.616(15.6) .105(2.67)

.598(15.2)
.092(2.34)
.012(.305)

.003(.076)
.013(.330)

.009(.229)
0 .050(1.27)
REF
.015(.381)
8
10
AT28C16
AT28C16

11
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© Atmel Corporation 1998.

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detailed in Atmel’s Terms and Conditions located on the Company’s website. The Company assumes no responsibility for any errors which may appear
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0540B–10/98/xM