Syn VFL15 20150129
Syn VFL15 20150129
Syn VFL15 20150129
Description
The is index guided 650 nm (Typ.) AlGaInP laser diode with low threshold current and high operating temperature. The low
threshold current and short wavelength are achieved by a strained multiple quantum well active layer. The lasing wavelength is
640nm which is 8 times brighter than that of 660nm lasers. The is suitable for applications such as bar-code scanners, laser printer,
and other optical information systems.
Features
◎ MQW 650nm FP LD
◎ High output power
◎ Low threshold current
◎ Built-in InGaAsP monitor PD (P Type)
◎ Wide temperature range operation
(Tc= -10 to+65°C)
◎ Package : Square 15mm*15mm M9 type
Application
◎ Laser module
◎ VFL (Visual Fault Locator)
Pin Assignment
Note:
P :Type Pin Applicable Power 1~5mw N :Type Pin Applicable Power 5~20mw
PN: SYN-RMPDVFL5-P-SC
PN: SYN-RMPDVFL5-P-ST
PN: SYN-RMPDVFL5-P-DIN
Semiconductor lasers and detectors are Static sensitive components are vulnerable to
Electrostatic discharge (ESD)and surge over Current (EOS) damage! Please contact
with Static sensitive