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    Power Logic Level Mosfets N-Channel Logic Level Power Field-Effect Transistors (L Fet)

    Uploaded by

    Thaynar Barbosa
    This document summarizes specifications for N-channel power MOSFET transistors. The devices can handle currents up to 15A and voltages up to 50V or 60V. They feature low gate drive requirements of 5V, fast switching speeds in the nanosecond range, and high input impedance. The devices come in TO-204AA and TO-220AB packages.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Power Logic Level Mosfets N-Channel Logic Level Power Field-Effect Transistors (L Fet)

    Uploaded by

    Thaynar Barbosa
    59 views2 pages
    This document summarizes specifications for N-channel power MOSFET transistors. The devices can handle currents up to 15A and voltages up to 50V or 60V. They feature low gate drive requirements of 5V, fast switching speeds in the nanosecond range, and high input impedance. The devices come in TO-204AA and TO-220AB packages.

    Original Title

    RFP15N05L - RFP15N06L

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    © © All Rights Reserved

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    This document summarizes specifications for N-channel power MOSFET transistors. The devices can handle currents up to 15A and voltages up to 50V or 60V. They feature low gate drive requirements of 5V, fast switching speeds in the nanosecond range, and high input impedance. The devices come in TO-204AA and TO-220AB packages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    59 views2 pages

    Power Logic Level Mosfets N-Channel Logic Level Power Field-Effect Transistors (L Fet)

    Uploaded by

    Thaynar Barbosa
    This document summarizes specifications for N-channel power MOSFET transistors. The devices can handle currents up to 15A and voltages up to 50V or 60V. They feature low gate drive requirements of 5V, fast switching speeds in the nanosecond range, and high input impedance. The devices come in TO-204AA and TO-220AB packages.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    J.E.II.E.LI<_/ <^>£.ml-(~onauetoi iJ-* 10 ducts,, One.

    CX

    20 STERN AVE. TELEPHONE: (973) 376-2922


    SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
    U.S.A. FAX: (973) 376-8960

    RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L

    Power Logic Level MOSFETs

    TERMINAL DIAGRAM
    N-Channel Logic Level
    Power Field-Effect Transistors (L2 FET)
    15 A, 50 and 60V
    ros(on):0.14n
    Features:
    Design optimized lor 5 volt gale drive
    Can be driven directly from 0-MOS, N-MOS, TTL Circuits
    Compatible with automotive drive requirements
    SOA Is power-dissipation limited
    Nanosecond switching speeds
    Linear transler characteristics
    High input impedance
    Majority carrier device
    N-CHANNEL ENHANCEMENT MODE

    The RFM15N05L and RFM15N06L and the RFP15NOSL TERMINAL DESIGNATIONS


    and RFP15N06L* are N-channel enhancement-mode RFM15N05L
    silicon-gate power field-effect transistors designed for RFM1SNOSL
    applications such as switching regulators, switching
    converter*, motor drivers, relay drivers, and drivers for
    high-power bipolar switching transistors requiring high
    speed and low gate-drive power, These types can be
    operated directly from Integrated circuits.
    The RFM-serlas types are supplied in the JEDEC TO-
    204AA steel package and the RFP-series types in the RFP15NOSL
    JEDEC TO-204AA
    JEDEC TO-220AB plastic package. RFP15N06L

    Because of space limitations branding (marking) on type


    RFP15N05L is F15NO5L and on type RFP1SN06L is
    F15N06L.

    JEDEC TO-220AB

    MAXIMUM RATINGS, Absolute-Maximum Valuas (f c » 25° C):

    HFH15N05L RFM1SN06L RFP1SN05L RFP1SN06L

    DRAIN-SOURCE VOLTAGE V0,s 50 60 SO 60 V


    DRAIN-GATE VOLTAGE (R,. * 1 MD) VOOR SO 60 50 60 V
    GATE-SOURCE VOLTAGE V0s V
    DRAIN CURRENT, RMS Continuous to A
    Pulsed IOM .40 . A
    POWER DISSIPATION @T C = !5°C Pi 75 75 60 60 W
    Derate above Tc = 26° C 0.6 0.6 0.46 0.48 w/»c
    OPERATING AND STORAGE
    TEMPERATURE T,. T.,0 . -55to*1SO-

    NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
    notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
    to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
    NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

    Quality Semi-Conductors
    RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L
    ELECTRICAL CHARACTERISTICS, At CM* T«mp»r«ture (Tc - 25°C) unlen otherwlta ipecllled

    LIMITS

    TEST RFM1SN05L RFM15N06L


    CHARACTERISTIC SYMBOL CONDITIONS RFP1SN05L RFP15N06L UNITS

    MIN. MAX. MIN. MAX.

    Drain-Source Breakdown BVoss ID • 1 mA 50 -— 60 — V


    Voltage Vos = 0
    Gate-Threshold Voltage Vdsurn Vgs = Vos 1 2 1 2 V
    In =• 1 mA
    Zero-Gate Voltage Drain loss VM • 40 V — 1 —
    Current VM = 50 V 1
    Tc = 125° C 0A
    V0, = 40 V - 50 -
    ' VD5 = 50 V 50
    Gate-Source Leakage Current loss VQS = ±10V — 100 — 100 nA
    Vos = 0
    Drain-Source On Voltage Vos,onl« I0 = 7.5A — 1.125 — 1.125
    Vos • 5 V
    V
    ID = 15 A — 3.0 — 3.0
    Vos • 5 V
    Static Drain-Source On rosfonl* lo = 7.5A — 0.14 — 0.14 n
    Resistance Vas • 5 V
    Forward Transconductance gt,' Vos = 10V
    _.
    4.0 4.0 - mho
    ID = 7.5 A
    _
    Input Capacitance C,,, Vos = 25 V 900 — 900
    Output Capacitance Con V0« = 0 V „ 450 — 450 pF
    Reverse-Transfer Capacitance Ow f = 1 MHz — 180 — 180
    Turn-On Delay Time tdlon) VDD = 30 V 16(typ) 40 16(typ) 40
    Rise Time t,
    lo = 7.5 A 250(typ) 325 250(typ) .325
    R,.» = ~ ns
    Turn-Oil Delay Time 1 atom R0, = 6.25 n 200(typ) 325 200(typ) 325
    Fall Time ti Vas = 5 V 225(typ) 325 225(typ) 325
    Thermal Resistance RSjc RFM15N05L,
    - 1.67 - 1.67
    Junctlon-to-Case RFM15N06L
    "C/W
    RFP15N05L,
    - 2.083 - 2.083
    RFP15N06L
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

    LIMITS

    RFM15N05L RFM15N06L
    CHARACTERISTIC SYMBOL TEST CONDITIONS RFP15NOSL RFP1SNOGL UNITS

    MIN. MAX. MIN. MAX.

    Diode Forward Voltage V5D» I60 = 7.5A - 1.4 1.4 V

    Reverse Recovery Time In IF = 4A, d,F/d, = 100A/J/S 225 (typ.) 226 (typ.) ns

    a Pulsed: Pulse duration = 300 fjs, duty cycle ~ 2%.

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