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    Unisonic Technologies Co., LTD: 7A, 1000V N-CHANNEL Power Mosfet

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    The document describes a 7A, 1000V N-channel power MOSFET from Unisonic Technologies. It provides detailed specifications, electrical characteristics, test circuits and typical performance curves for the device.

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    Unisonic Technologies Co., LTD: 7A, 1000V N-CHANNEL Power Mosfet

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    Street fighter
    22 views7 pages
    The document describes a 7A, 1000V N-channel power MOSFET from Unisonic Technologies. It provides detailed specifications, electrical characteristics, test circuits and typical performance curves for the device.

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    Datasheet

    Original Title

    7N100-C-UTC

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    The document describes a 7A, 1000V N-channel power MOSFET from Unisonic Technologies. It provides detailed specifications, electrical characteristics, test circuits and typical performance curves for the device.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    22 views7 pages

    Unisonic Technologies Co., LTD: 7A, 1000V N-CHANNEL Power Mosfet

    Uploaded by

    Street fighter
    The document describes a 7A, 1000V N-channel power MOSFET from Unisonic Technologies. It provides detailed specifications, electrical characteristics, test circuits and typical performance curves for the device.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 7

    UNISONIC TECHNOLOGIES CO.

    , LTD
    7N100-C Power MOSFET

    7A, 1000V N-CHANNEL


    POWER MOSFET

     DESCRIPTION
    The UTC 7N100-C provide excellent RDS(ON), low gate
    charge and operation with low gate voltages. This device is 1
    suitable for use as a load switch or in PWM applications.
    TO-220F2

     FEATURES0
    * RDS(ON) ≤ 1.6Ω @ VGS=10V, ID=3.5A
    * Low Reverse Transfer Capacitance
    * Fast Switching Capability
    * Avalanche Energy Specified
    * Improved dv/dt Capability, High Ruggedness
     SYMBOL

     ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Lead Free Halogen Free 1 2 3
    7N100L-TF2-T 7N100G-TF2-T TO-220F2 G D S Tube
    Note: Pin Assignment: G: Gate D: Drain S: Source

     MARKING

    www.unisonic.com.tw 1 of 7
    Copyright © 2019 Unisonic Technologies Co., Ltd QW-R205-569.A
    7N100-C Power MOSFET
     ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage VDSS 1000 V
    Gate-Source Voltage VGSS ±30 V
    Continuous ID 7 A
    Drain Current
    Pulsed (Note 2) IDM 14 A
    Avalanche Energy Single Pulsed (Note 3) EAS 174 mJ
    Peak Diode Recovery dv/dt (Note 4) dv/dt 1.5 V/ns
    Power Dissipation PD 34 W
    Junction Temperature TJ +150 °С
    Storage Temperature TSTG -55 ~ +150 °С
    Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    2. Repetitive Rating : Pulse width limited by maximum junction temperature.
    3. L=10mH, IAS=5.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
    4. ISD≤7A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
     THERMAL DATA
    PARAMETER SYMBOL RATING UNIT
    Junction to Ambient θJA 62.5 °C/W
    Junction to Case θJC 3.68 °C/W

     ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 1000 V
    Drain-Source Leakage Current IDSS VDS=1000V, VGS=0V 10 μA
    Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 3.0 5.0 V
    Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.5A 1.6 Ω
    DYNAMIC CHARACTERISTICS
    Input Capacitance CISS 1830 pF
    Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 190 pF
    Reverse Transfer Capacitance CRSS 19 pF
    SWITCHING CHARACTERISTICS
    Total Gate Charge (Note 1) QG 52 nC
    VDS=800V, VGS=10V, ID=7A
    Gate-Source Charge QGS 10 nC
    IG=1mA (Note 1, 2)
    Gate-Drain Charge QGD 15 nC
    Turn-On Delay Time (Note 1) tD(ON) 32 ns
    Turn-On Rise Time tR VDD=100V, VGS=10V, 26 ns
    Turn-Off Delay Time tD(OFF) ID=7A, RG=25Ω (Note 1, 2) 140 ns
    Turn-Off Fall Time tF 51 ns
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Maximum Continuous Drain-Source Diode
    IS 7 A
    Forward Current
    Maximum Pulsed Drain-Source Diode
    ISM 14 A
    Forward Current
    Drain-Source Diode Forward Voltage (Note 1) VSD IS=7A, VGS=0V 1.4 V
    Body Diode Reverse Recovery Time (Note 1) trr IS=7A, VGS=0V, 1013 nS
    Body Diode Reverse Recovery Charge Qrr dIF/dt=100A/µs 9.2 μC
    Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
    2. Essentially independent of operating temperature.

    UNISONIC TECHNOLOGIES CO., LTD 2 of 7


    www.unisonic.com.tw QW-R205-569.A
    7N100-C Power MOSFET

     TEST CIRCUITS AND WAVEFORMS

    Peak Diode Recovery dv/dt Test Circuit

    Gate Pulse Width


    VGS D=
    Gate Pulse Period 10V
    (Driver)

    IFM, Body Diode Forward Current


    ISD
    (DUT) di/dt

    IRM

    Body Diode Reverse Current

    VDS
    (DUT) Body Diode Recovery dv/dt

    VSD VDD

    Body Diode Forward


    Voltage Drop

    Peak Diode Recovery dv/dt Waveforms

    UNISONIC TECHNOLOGIES CO., LTD 3 of 7


    www.unisonic.com.tw QW-R205-569.A
    7N100-C Power MOSFET

     TEST CIRCUITS AND WAVEFORMS

    UNISONIC TECHNOLOGIES CO., LTD 4 of 7


    www.unisonic.com.tw QW-R205-569.A
    7N100-C Power MOSFET

     TYPICAL CHARACTERISTICS

    UNISONIC TECHNOLOGIES CO., LTD 5 of 7


    www.unisonic.com.tw QW-R205-569.A
    7N100-C Power MOSFET

     TYPICAL CHARACTERISTICS (Cont.)

    UNISONIC TECHNOLOGIES CO., LTD 6 of 7


    www.unisonic.com.tw QW-R205-569.A
    7N100-C Power MOSFET

     TYPICAL CHARACTERISTICS (Cont.)

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
    parameters) listed in products specifications of any and all UTC products described or contained herein.
    UTC products are not designed for use in life support appliances, devices or systems where malfunction
    of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
    part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
    make changes to information published in this document, including without limitation specifications and
    product descriptions, at any time and without notice. This document supersedes and replaces all
    information supplied prior to the publication hereof.

    UNISONIC TECHNOLOGIES CO., LTD 7 of 7


    www.unisonic.com.tw QW-R205-569.A

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