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    Unisonic Technologies Co., LTD: 20A, 650V N-CHANNEL Power Mosfet

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    Valci Filho Silva Filho

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    © All Rights Reserved
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    Unisonic Technologies Co., LTD: 20A, 650V N-CHANNEL Power Mosfet

    Uploaded by

    Valci Filho Silva Filho
    50 views3 pages

    Original Title

    Data Sheet

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    50 views3 pages

    Unisonic Technologies Co., LTD: 20A, 650V N-CHANNEL Power Mosfet

    Uploaded by

    Valci Filho Silva Filho

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    UNISONIC TECHNOLOGIES CO.

    , LTD
    20N65 Preliminary Power MOSFET

    20A, 650V N-CHANNEL


    POWER MOSFET

    „ DESCRIPTION
    The UTC 20N65 is an N-channel enhancement mode power
    MOSFET using UTC’s advanced technology to provide customers 1
    with planar stripe and DMOS technology. This technology is TO-247
    specialized in allowing a minimum on-state resistance and superior
    switching performance. It also can withstand high energy pulse in
    the avalanche and commutation mode.
    The UTC 20N65 is universally applied in motor control, UPS, DC
    choppers and switch-mode and resonant-mode power supplies.

    „ FEATURES
    * RDS(ON) = 0.45Ω @VGS = 10 V
    * High switching speed

    „ SYMBOL
    2.Drain

    1.Gate

    3.Source

    „ ORDERING INFORMATION
    Ordering Number Pin Assignment
    Package Packing
    Lead Free Halogen Free 1 2 3
    20N65L-T47-T 20N65G-T47-T TO-247 G D S Tube
    Note: Pin Assignment: G: Gate D: Drain S: Source

    www.unisonic.com.tw 1 of 3
    Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-731.a
    20N65 Preliminary Power MOSFET
    „ ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)
    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage VDSS 650 V
    Gate-Source Voltage VGSS ±30 V
    Continuous ID 20 A
    Drain Current (TC=25°C)
    Pulsed IDM 80 A
    Avalanche Energy Single Pulsed(Note 2) EAS 1200 mJ
    Power Dissipation (TC=25°C) PD 300 W
    Junction Temperature TJ +150 °C
    Storage Temperature TSTG -55~+150 °C
    Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    2. VDD=50V, Starting TJ=25°С, Peak IAS=20A, L=6mH
    „ THERMAL DATA
    PARAMETER SYMBOL RATINGS UNIT
    Junction to Case θJC 0.42 °С/ W

    „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 650 V
    Drain-Source Leakage Current IDSS VDS=650V, VGS=0V 10 µA
    Forward VGS=+30V, VDS=0V +100 nA
    Gate- Source Leakage Current IGSS
    Reverse VGS=-30V, VDS=0V -100 nA
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
    VGS=10V, ID=10A, Pulse test,
    Static Drain-Source On-State Resistance RDS(ON) 0.32 0.45 Ω
    t≤300µs, duty cycle d≤2%
    DYNAMIC PARAMETERS
    Input Capacitance CISS 4500 pF
    Output Capacitance COSS VGS=0V, VDS=25V, f=1MHz 420 pF
    Reverse Transfer Capacitance CRSS 140 pF
    SWITCHING PARAMETERS
    Total Gate Charge QG 150 170 nC
    VGS=10V, VDS=520V, ID=10A
    Gate to Source Charge QGS 29 40 nC
    (Note 1, 2)
    Gate to Drain Charge QGD 60 85 nC
    Turn-ON Delay Time tD(ON) 20 40 ns
    Rise Time tR VGS=10V, VDS=325V, ID=10A, 43 60 ns
    Turn-OFF Delay Time tD(OFF) RG=2Ω (Note 1, 2) 70 90 ns
    Fall-Time tF 40 60 ns
    SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
    Maximum Body-Diode Continuous
    IS VGS=0V 20 A
    Current
    Maximum Body-Diode Pulsed Current ISM Repetitive 80 A
    IF=IS, VGS=0V, Pulse test,
    Drain-Source Diode Forward Voltage VSD 1.5 V
    t≤300µs, duty cycle d≤2%
    Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
    2. Essentially independent of operating temperature

    UNISONIC TECHNOLOGIES CO., LTD 2 of 3


    www.unisonic.com.tw QW-R502-731.a
    20N65 Preliminary Power MOSFET

    UTC assumes no responsibility for equipment failures that result from using products at values that
    exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
    other parameters) listed in products specifications of any and all UTC products described or contained
    herein. UTC products are not designed for use in life support appliances, devices or systems where
    malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
    whole or in part is prohibited without the prior written consent of the copyright owner. The information
    presented in this document does not form part of any quotation or contract, is believed to be accurate
    and reliable and may be changed without notice.

    UNISONIC TECHNOLOGIES CO., LTD 3 of 3


    www.unisonic.com.tw QW-R502-731.a

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