Gre

r
Pr STM4432
S a mHop Microelectronics C orp. Ver 1.0

N-Channel Enhancement Mode Field Effect Transistor

FEATURES
PRODUCT SUMMARY
Super high dense cell design for low R DS(ON).
V DSS ID R DS(ON) (m ) Max
Rugged and reliable.
11 @ VGS=10V
40V 12A
Suface Mount Package.
15 @ VGS=4.5V

S O-8
1

ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

Symbol Parameter Limit Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
a TA=25°C 12 A
ID Drain Current-Continuous
TA=70°C 9.6 A
b
IDM -Pulsed 60 A
EAS Sigle Pulse Avalanche Energy d 121 mJ
a TA=25°C 2.5 W
PD Maximum Power Dissipation
TA=70°C 1.6 W
Operating Junction and Storage
TJ, TSTG -55 to 150 °C
Temperature Range

THERMAL CHARACTERISTICS
a
R JA Thermal Resistance, Junction-to-Ambient 50 °C/W

Details are subject to change without notice. Nov,03,2010

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STM4432
Ver 1.0

ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 V
IDSS Zero Gate Voltage Drain Current VDS=32V , VGS=0V 1 uA
IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±100 nA

ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA 1 1.7 3 V
VGS=10V , ID=12A 9 11 m ohm
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V , ID=10A 12 15 m ohm
gFS Forward Transconductance VDS=10V , ID=12A 25 S
c
DYNAMIC CHARACTERISTICS
CISS Input Capacitance 1375 pF
VDS=20V,VGS=0V
COSS Output Capacitance 220 pF
f=1.0MHz
CRSS Reverse Transfer Capacitance 170 pF
c
SWITCHING CHARACTERISTICS
tD(ON) Turn-On Delay Time VDD=20V 25 ns
tr Rise Time ID=1A 31 ns
tD(OFF) Turn-Off Delay Time VGS=10V 63 ns
tf Fall Time RGEN=6 ohm 19 ns
VDS=20V,ID=12A,VGS=10V 27 nC
Qg Total Gate Charge
VDS=20V,ID=12A,VGS=4.5V 13 nC
Qgs Gate-Source Charge VDS=20V,ID=12A, 3.5 nC
Qgd Gate-Drain Charge VGS=10V 6.5 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS Maximum Continuous Drain-Source Diode Forward Current 2 A
VSD Diode Forward Voltage VGS=0V,IS=2A 0.76 1.3 V
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width < _ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=20V.(See Figure13)

Nov,03,2010

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STM4432
Ver 1.0

25 15
VGS=10V
VGS=3V 12
20 VGS=4.5V
ID, Drain Current(A)

ID, Drain Current(A)

Tj=125 C

15 9

25 C
10 6

-55 C
5 3

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.6 1.2 1.8 2.4 3.0 3.6

V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

18 2.0

15 1.8
R DS(on), On-Resistance

VGS=4.5V
12 1.6 VGS=10V
R DS(on)(m Ω)

Normalized

ID=12A

9 1.4
VGS=10V

6 1.2
VGS=4.5V
3 1.0 ID=10A

1 0
1 5 10 15 20 25 0 25 50 75 100 125 150
T j ( °C )
I D, Drain Current(A) Tj, Junction Temperature(° C )

Figure 3. On-Resistance vs. Drain Current Figure 4. On-Resistance Variation with Drain
and Gate Voltage Current and Temperature

1.6 1.15
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

VDS=VGS ID=250uA
1.4 ID=250uA 1.10
BVDSS, Normalized

1.2
Vth, Normalized

1.05
1.0
1.00
0.8
0.95
0.6

0.4 0.90

0.2 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature(° C ) Tj, Junction Temperature(° C )

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature
Nov,03,2010

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STM4432
Ver 1.0

30 20.0
ID=12A

Is, Source-drain current(A)

25 125 C
10.0
20
RDS(on)(m Ω)

125 C
5.0
15

10 75 C 25 C
75 C
25 C
5

0 1.0
0 2 4 6 8 10 0 0.25 0.50 0.75 1.00 1.25

V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V)

Figure 7. On-Resistance vs. Figure 8. Body Diode Forward Voltage

Gate-Source Voltage Variation with Source Current

1800 10
V GS, Gate to Source Voltage(V)

Ciss
1500 VDS=20V
8
ID=12A
C, Capacitance(pF)

1200
6
900

4
600
Coss
300
2
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40
V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC)
Figure 9. Capacitance Figure 10. Gate Charge

300
100
it
100 L im
N) 10
TD(off )
DS
(O 0u
s
I D, Drain Current(A)

R 1m
10
Switching Time(ns)

Tr
s
10
TD(on) ms
Tf
1S
1 DC
10

0.1 V G S =10V
VDS=20V,ID=1A S ingle P ulse
VGS=10V T A =25 C
1
1 10 100 0.1 1 10 100

Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V)

Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area

Nov,03,2010

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STM4432
Ver 1.0

V ( BR )D S S
15V
tp

L D R IVE R
VDS

RG D .U .T +
- VD D
IA S A
20V
tp 0.0 1 IAS

Unclamped Inductive Test Circuit Unclamped Inductive Waveforms

F igure 13a. F igure 13b.

1
0.5
Normalized Transient

0.2
Thermal Resistance

0.1
0.1
0.05

0.02
0.01 P DM

0.01 t1
Single Pulse t2

1. R thJ A (t)=r (t) * R thJ A

2. R thJ A =S ee Datas heet
3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
0.001
0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000
Square Wave Pulse Duration(sec)

Figure 14. Normalized Thermal Transient Impedance Curve

Nov,03,2010

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STM4432
Ver 1.0

PACKAGE OUTLINE DIMENSIONS

SO-8

E
D

0.015X45±
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0± 8± 0± 8±

Nov,03,2010

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STM4432
Ver 1.0

SO-8 Tape and Reel Data

SO-8 Carrier Tape
P1

D1 P2
A

E1
E2

E
B0

A0 D0 P0 A

T TERMINAL NUMBER 1

SECTION A-A

K0 FEEDING DIRECTION

unit:р
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T

SOP 8N 6.50 ӿ1.5 12.0 5.5 8.0 0.30

5.25 2.10 ӿ1.55 1.75 4.0 2.0
²0.15 (MIN) +0.3 ²0.10 ²0.10 ²0.013
150п ²0.10 ²0.10 ²0.10 ²0.10 ²0.10 ²0.10
- 0.1

SO-8 Reel

UNIT:р

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 р 330 62 12.4 16.8 ӿ12.75 2.0

ӿ330
² 1 ²1.5 + 0.2 - 0.4 + 0.15 ²0.15

Nov,03,2010

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