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    STP 211 Exp 4

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    ayoyemibukola746
    The document describes an experiment to observe the voltage-current characteristics of a PN junction diode in forward bias. The circuit diagram and procedure are provided. Voltage and current readings are recorded in a table as the input voltage is increased in steps. A graph is plotted of voltage vs. current.

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    STP 211 Exp 4

    Uploaded by

    ayoyemibukola746
    4 views2 pages
    The document describes an experiment to observe the voltage-current characteristics of a PN junction diode in forward bias. The circuit diagram and procedure are provided. Voltage and current readings are recorded in a table as the input voltage is increased in steps. A graph is plotted of voltage vs. current.

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    STP 211 EXP 4

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    The document describes an experiment to observe the voltage-current characteristics of a PN junction diode in forward bias. The circuit diagram and procedure are provided. Voltage and current readings are recorded in a table as the input voltage is increased in steps. A graph is plotted of voltage vs. current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    4 views2 pages

    STP 211 Exp 4

    Uploaded by

    ayoyemibukola746
    The document describes an experiment to observe the voltage-current characteristics of a PN junction diode in forward bias. The circuit diagram and procedure are provided. Voltage and current readings are recorded in a table as the input voltage is increased in steps. A graph is plotted of voltage vs. current.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    EXP 4

    Date:
    Title: P-N Junction Diode Characteristics
    Objectives: (1) To observe and plot the graph forward bias V-I characteristic of a P-N Junction diode (2)
    to calculate the static and dynamic characteristics in forward bias condition’
    Materials: DC Power supply (0 -25V), Multimeters, Silicon Diode (IN4001), Switch, Breadboard,
    resistors and connecting wires
    Introduction
    A P-N junction diode conducts only in one direction. The V-I characteristics of the diode are curve between
    voltage across the diode and current flowing through the diode. When external voltage is zero, circuit is
    open and the potential barrier does not allow the current to flow. Therefore, the circuit current is zero.
    When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected –ve terminal of the
    supply voltage is known as reverse bias and the potential barrier across the junction increases. Therefore,
    the junction resistance becomes very high and a very small current (reverse saturation current) flows in the
    circuit. Then diode is said to be in OFF state. The reverse bias current is due to minority charge carriers.
    Expected Graph

    Circuit Diagram:
    Procedure:
    Make the connection as per the circuit diagram. Switch on the power supply and increase the input
    voltage (supply voltage) in steps of 1V. Note down the corresponding current flowing through the diode
    voltage across the diode for every step of the input voltage. Tabulate the readings of voltage and current
    are tabulated Graph is plotted between voltage (VR) on X-axis and current (IR) on Y-axis.

    Observation:
    S/N Applied Voltage (V) Reverse Voltage (VR ) Reverse Current (IR)
    1 1.0
    2 2.0
    3 3.0
    4 4.0
    5 5.0
    6 6.0
    7 7.0
    8 8.0
    9 9.0
    10 10.0
    11 11.0
    12 12.0
    13 13.0
    14 14.0
    15 15.0
    16 16.0
    18 17.0
    19 18.0
    20
    21
    22
    23

    Calculation:
    Calculation of Static and Dynamic Resistance for a given diode.
    In reverse bias condition:
    Static Resistance , Rs = VR / IR =
    Dynamic Resistance, RD = ∆VR / ∆IR =

    Precautions:

    Conclusion:

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