BXE Experiment No.3

Experiment No.
To Study V-I Characteristics of P-N Junction Diode and Zener Diode
V-I characteristics of:

a) P-N Junction Diode (Study the datasheet of typical PN junction diode 1N 4007)
b) Zener Diode (Study the datasheet of typical Zener diode 1N 4735)
Aim: a) To Study V - I Characteristics of P-N Junction

Diode.Components: NameQuantity
Diodes 1N4007 1
Diodes 1N4735 1
Resistor 1K 1
Specifications:
Silicon Diode 1N 4007:

Max Forward Current =
1A
Max Reverse Current = 5.0μA
Max Forward Voltage = 0.8V
Max Reverse Voltage = 1000V
Max Power Dissipation =
30mWTemperature = -65 to
200° C
S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 1 of 8

Theory: The P-N junction supports uni-directional current flow. If +ve terminal of the input
supply is connected to anode (P-side) and –ve terminal of the input supply is connected the
cathode. Then diode is said to be forward biased. In this condition the height of the
potential barrier at the junction is lowered by an amount equal to given forward biasing
voltage. Both the holes from p-side and electrons from n-side cross the junction
simultaneously and constitute a forward current from n-side (injected minority current –
due to holes crossing the junction and entering P- side of the diode). Assuming current
flowing through the diode to be very large, the diode can be approximated as short-
circuited switch.
If –ve terminal of the input supply is connected to anode (p-side) and +ve terminal of
the input supply is connected to cathode (n-side) then the diode is said to be reverse
biased. In this condition an amount equal to reverse biasing voltage increases the height
of the potential barrier at the junction. Both the holes on P-side and electrons on N-side
tend to move away from the junction there by increasing the depleted region. However, the
process cannot continue indefinitely, thus a small current called reverse saturation current
continues to flow in the diode. This current is negligible hence the diode can be
approximated as an open circuited switch.
The volt-ampere characteristics of a diode explained by the following equations
VD/η
I=I0(e vT - 1)
Where I = current flowing in the diode, I0 = reverse saturation current VD = Voltage
applied to thediode
VT = volt- equivalent of temperature = k T/q = T/ 11,600 = 26mV (@
room temp)η= 1(for Ge) and 2 (for Si)
Circuit Diagrams:
Fig. 1: Forward Bias Condition

Fig. 2: Reverse Bias Condition
Procedure:
Forward Bias Condition:
1. Connect the components as shown in the Fig.1.
2. Vary the supply voltage such that the voltage across the Silicon diode varies from 0 to
0.6 V in steps of 0.1 V and in steps of 0.02 V from 0.6 to 0.76 V. In each step record the
current flowing through the diode as I.
3. Repeat the above steps for Germanium diode too but with the exception that the voltage
across thediode should be varied in steps of 0.01 V from 0.1 to 0.3 V in step-2.
Reverse Bias Condition:

1. Connect the diode in the reverse bias as shown in the Fig.2.
2. Vary the supply voltage such that the voltage across the diode varies from 0 to 10V in
steps of 1 V.Record the current flowing through the diode in each step.
3. Repeat the above steps for Germanium diode too and record the current in each step.
4. Now plot a graph between the voltage across the diode and the current flowing through
the diode in forward and reverse bias, for Silicon and Germanium diodes on separate
graph sheets. This graphis called the V-I characteristics of the diodes.
5. Calculate the static and dynamic resistance of each diode in forward and reverse bias
using thefollowing formulae.

𝑉𝑓
Static forward resistance, 𝑅 = 𝛺=
𝐼𝑓
∆𝑉𝑓
Dynamic resistance, 𝑟𝑎𝑐 = 𝛺=
∆𝐼𝑓
Observations:
Forward Bias Condition: Reverse Bias Condition:
Sr. Input Forward Forward Sr. Input Reverse Reverse

No. Voltage Voltage across Current No. Voltage Voltage Current
(Volts) the diode through (Volts) across the throughthe
Vd (Volt) diode diodeVR diode
Id(mA) (Volt) IR (μA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8
Graphs:

Results:
Cut in voltage = _ V
Static Forward Resistance = ______Ω
Dynamic Forward Resistance = ______Ω

V-I Characteristics of P-N Junction Diodes are studied.
b) To Study V-I Characteristics of Zener Diode.
Components: Name Quantity

Zener Diodes 1
Resistor 1K 1
Name Range Quantity
Bread board 1
Regulated 0-30V 1
power supply
Digital 200mA 1
Ammeter
Digital 0-20V 1
Voltmeter
Specifications:
Breakdown Voltage = 5.5V
Power dissipation = 0.75W
Max Forward Current = 1A
Theory: Zener diode is a heavily doped Silicon diode. An ideal P-N junction diode does not
conduct in reverse biased condition. A Zener diode conducts excellently even in reverse
biased condition. These diodes operate at a precise value of voltage called break down
voltage. A Zener diode when forward biased behaves like an ordinary P-N junction diode. A
Zener diode when reverse biased can undergo avalanche break down or Zener break down.

Avalanche Break down:
If both p-side and n-side of the diode are lightly doped, depletion region at the
junction widens. Application of a very large electric field at the junction increases the
kinetic energy of the charge carriers which collides with the adjacent atoms and generates
charge carriers by breaking the bond, they in-turn collides with other atoms by creating
new charge carriers, this process is cumulative which results in the generation of large
current resulting in Avalanche Breakdown.
Zener Break down:

If both p-side and n-side of the diode are heavily doped, depletion region at the
junction reduces, it leads to the development of strong electric field and application of even
a small voltage at the junction may rupture covalent bond and generate large number of
charge carriers. Such sudden increase in the number of charge carriers results in Zener
break down.
Circuit Diagram:
Fig. 3: Forward Bias Condition
Fig. 4: Reverse Bias Condition

Procedure:
Forward Bias Condition:
1. Connect the circuit as shown in fig.3.

2. Vary VF gradually from 0 to 10 V. In each step record the current flowing through the
diode as IF.
3. Tabulate different forward currents obtained for different forward voltages.
Reverse Bias Condition:
1. Connect the Zener diode in reverse bias as shown in the fig.4. Vary the voltage across the
diode in steps of 1V from 0 V to 6 V and in steps 0.5 V till its breakdown voltage is reached.
In each step notethe current flowing through the diode
2. Plot a graph between V and I. This graph will be called the V-I characteristics of
Zener diode.From the graph find out the breakdown voltage for the diode.
Observations:
Forward Bias Condition: Reverse Bias Condition:
Sr. Input Forward Forward Sr. Input Reverse Reverse

No. Voltage Voltage across Current No. Voltage Voltage Current
(Volts) the diode through (Volts) across the throughthe
Vd (Volt) diode diodeVR diode
Id(mA) (Volt) IR (μA)
1 1
2 2
3 3
4 4
5 5
6 6
7 7
8 8

Graph:
Results:
1. The Zener Diode Characteristics have been studied.

2. The breakdown voltage of Zener diode in reverse bias was found to be = 5.5V
conclusion:
____________________________________________________________________
_____________________________________________________________________

BXE Experiment No.3

Uploaded by

Copyright:

Available Formats

BXE Experiment No.3

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

BXE Experiment No.3

Uploaded by

Copyright:

Available Formats

Experiment No.

To Study V-I Characteristics of P-N Junction Diode and Zener Diode

V-I characteristics of:

Aim: a) To Study V - I Characteristics of P-N Junction

Silicon Diode 1N 4007:

S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 1 of 8

Fig. 1: Forward Bias Condition

Forward Bias Condition:

1. Connect the components as shown in the Fig.1.

Reverse Bias Condition:

S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 3 of 8

Forward Bias Condition: Reverse Bias Condition:

Sr. Input Forward Forward Sr. Input Reverse Reverse

S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 4 of 8

Dynamic Forward Resistance = ______Ω

b) To Study V-I Characteristics of Zener Diode.

Components: Name Quantity

Name Range Quantity

S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 5 of 8

Zener Break down:

Fig. 3: Forward Bias Condition

Fig. 4: Reverse Bias Condition

Forward Bias Condition:

1. Connect the circuit as shown in fig.3.

Reverse Bias Condition:

Forward Bias Condition: Reverse Bias Condition:

Sr. Input Forward Forward Sr. Input Reverse Reverse

S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 7 of 8

1. The Zener Diode Characteristics have been studied.

S.V.P.M.’S College of Engineering, Malegaon (Bk) Page 8 of 8

You might also like