AP8012 Chipown

GREEN POWER
OFF LINE SMPS PRIMARY SWITCHE

Features z Electromagnetic Oven power supplies

z 85v to 265v wide range AC voltage input z Air Conditioner power supplies
z A 730v MOSFET on the same silicon chip z AC/DC LED Driver Applications
z Auto start up with high voltage current source
z PWM with current mode control
z 10v to 39v wide range VCC voltage Package
z Fixed 55KHz switching frequency
z Automatic skip cycle mode in low load condition.
Type
z Over temperature, over current and over voltage SO8 DIP8
protection
European (195-265 Vac) 8W 13W
z Auxiliary under voltage lockout with hysteresis

US (85-265 Vac) 5W 8W

Applications
z Power AC/DC Adapters for Chargers

Typical Application

AC

+
DC

VCC SW
COMP AP8012

GND

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AP8012 Chipown
Pin Configuration

GND 1 8 SW
GND 1 8 SW

GND 2 7 SW GND 2 7 SW

COMP 3 6 SW COMP 3 6 SW

VCC 4 5 SW VCC 4 5 SW

SOP-8 DIP 8

Pin Definitions
Pin Number Pin Name Pin Function Description

1,2 GND Sense FET source terminal on primary side and internal control ground.

3 COMP Feedback input defines the peak drain MOSFET current.

Positive supply voltage input. Although connected to an auxiliary transformer

winding, current is supplied from SW via an internal switch during startup (see
4 VCC Internal Block Diagram section). It is not until VCC reaches them UVLO upper
threshold (15.5V) that the internal start-up switch opens and device power is
supplied via the auxiliary transformer winding.
The SW pin is designed to connect directly to the primary lead of the transformer
5,6,7,8 SW
and is capable of switching a maximum of 700V.

Internal Block Diagram

VCC SW
STARTUP SOURCE

OTP STARTUP
CONIROL
-
+ R1 PWMLATCHER
R2 Q OUTPUT
UVLO CONTROL FF M2
R3 DRIVER M1
+ R4 S
-
OVP DETECT
OSCILITOR
LEB
+
-

REFERENCE

R1 R2
PRE-
REGULATOR BIAS

COMP GND

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AP8012 Chipown
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Symbol Parameter Value Unit
VSW SW to GND Voltage (Tj=25-125°C) -0.3 ... 730 V
ID Continuous VDMOS Drain Current Internally limited A
VCC Supply Voltage 0...50 V
ICOMP Feedback Current 3 mA
Electrostatic Discharge:
VESDMM 200 V
Machine Model ((R=0Ω; C=200pF)
Electrostatic Discharge:
VESDHBM 2000 V
HBM
Tj Junction Operating Temperature Internally limited °C
Tc Case Operating Temperature -40 to 150 °C
Tstg Storage Temperature -55 to 150 °C

Electrical Characteristic (Power)

Symbol Parameter Condition Min. Typ. Max. Unit

ID=1mA;
BVDSS VDMOS Breakdown Voltage 730 750 V
VCOMP=2V
VDS=500V;
IDSS Zero Gate Voltage Drain Current 100 μA
VCOMP=2V;
VGS=10V
RDSON Static Drain-Source on Resistance 27 30 Ω
ID=0.4A;
ID=0.1A;
Tr Rise Time 50
VIN=300V
ns
ID=0.2A;
Tf Fall Time 100
VIN=300V
COSS VDMOS Drain Capacitance VDS=25V 40 pF

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AP8012 Chipown
Electrical Characteristic (Control)
(Ta=25°C, VCC=18V, unless otherwise specified)

Symbol Parameter Condition Min. Typ. Max. Unit

UVLO SECTION
VSTART VCC Start Threshold Voltage VCOMP=0V 14 15.5 17 V
VSTOP VCC Stop Threshold Voltage VCOMP=0V 8 9 10 V
VHYS VCC Threshold Hysteresis 5.8 6.5 7.2 V
OSCILLATOR SECTION
VSTOP≤VCC≤35
FOSC Initial Accuracy 48 55 62 kHz
V; 0≤Tj≤ 100°C
Frequency Change With -25°C ≤ Tj
ΔF/ΔT ±5 ±10 %
Temperature ≤ +85°C
FEEDBACK SECTION
Tj=25°C,
ICOMP Feedback Shutdown Current 0.9 mA
VCOMP = 0V
RCOMP COMP Pin Input Impedance ID=0mA 1.4 kΩ
CURRENT LIMIT(SELF-PROTECTION)SECTION
GID ICOMP to ID Current Gain 320
ILIM Peak Current Limit Tj = 25°C 0.32 0.40 0.48 A
TD Current Sense Delay to Turn-Off ID=0.2A 200 ns
TB B Blanking Time 500 ns
TONMIN Minimum Turn On Time 700 ns
PROTECTION SECTION
TSD Thermal Shutdown Temperature 140 170 - °C
THYST Thermal Shutdown Hysteresis 40 °C
VOVP Over Voltage Protection 39 43 47 V
SUPPLY CURRENT SECTION
ICH Startup Charging Current 1 mA
VCC=5V;
Start Up Charging Current
ICHOFF VDS=100V 0.2 mA
in Thermal Shutdown
Tj > TSD
Operating Supply Current
IOP0 (Control Part Only) VCOMP = 0V 4 mA
Switching
Operating Supply Current
IOP1 (Control Part Only) VCOMP = 2V 2.6 5 mA
Not Switching

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AP8012 Chipown
Functional Description
1. Startup then compared to a fixed reference voltage. The MOSFET
This device includes a high voltage start up current source is switched off when VR2 equals the reference voltage.
connected on the SW of the device. As soon as a voltage is 3. Leading Edge Blanking (LEB)
applied on the input of the converter, this start up current At the instant the internal Sense FET is turned on, there
source is activated and to charge the VCC capacitor as usually exists a high current spike through the Sense FET,
long as VCC is lower than VSTART. When reaching caused by the primary side capacitance and secondary side
VSTART, the start up current source is cut off by rectifier diode reverse recovery. Excessive voltage
UVLO&TSD and the device begins to operate by turning across the sense resistor would lead to false feedback
on and off its main power MOSFET. As the COMP pin operation in the current mode PWM control. To counter
does not receive any current from the opto-coupler, the this effect, the device employs a leading edge blanking
device operates at full current capacity and the output (LEB) circuit. This circuit inhibits the PWM comparator
voltage rises until reaching the regulation point where the for a short time (typically 500ns) after the Sense FET is
secondary loop begins to send a current in the opto-coupler. turned on.
At this point, the converter enters a regulated operation 4. Under Voltage Lock Out
where the COMP pin receives the amount of current Once fault condition occurs, switching is terminated and
needed to deliver the right power on secondary side. the Sense FET remains off. This causes VCC to fall. When
VCC reaches the UVLO stop voltage, 9V, the protection is
reset and the internal high voltage current source charges
the VCC capacitor. When VCC reaches the UVLO start
voltage, 15.5V, the device resumes its normal operation. In
this manner, the auto-restart can alternately enable and
disable the switching of the power Sense FET until the
fault condition is eliminated.
5. Thermal Shutdown (TSD)
Fig 1 Startup circuit The Sense FET and the control IC are integrated in the
2. Feedback same chip, making it easier for the control IC to detect the
A feedback pin controls the operation of the device. Unlike temperature of the Sense FET. When the temperature
conventional PWM control circuits which use a voltage exceeds approximately 170°C, thermal shutdown is
input, the COMP pin is sensitive to current. Figure 2 activated, the device turn off the Sense FET and the high
presents the internal current mode structure. The Power voltage current source to charge VCC. The device will go
MOSFET delivers a sense current which is proportional to back to work when the lower threshold temperature about
the main current. R2 receives this current and the current 140°C is reached.
coming from the COMP pin. The voltage across R2 VR2 is 6. Over Voltage Protection (OVP)
In case of malfunction in the secondary side feedback
circuit, or feedback loop open caused by a defect of solder,
the current through the opto-coupler transistor becomes
almost zero. Because excess energy is provided to the
output, the output voltage may exceed the rated voltage,
resulting in the breakdown of the devices in the secondary
side. In order to prevent this situation, an over voltage
protection (OVP) circuit is employed. If VCC exceeds 43V,
Fig 2 Feedback Circuit

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AP8012 Chipown
OVP circuit is activated resulting in termination of the of OVP during normal operation, VCC should be properly
switching operation. In order to avoid undesired activation designed to be below 43V.

Reference Circuit

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AP8012 Chipown
Package Dimensions（DIP8）

Size Size
Min(mm) Max(min) Min(mm) Max(min)
symbol symbol
A 9.30 9.50 C2 0.50

A1 1.524 C3 3.3
A2 0.39 0.53 C4 1.57TYP
A3 2.54 D 8.2 8.8
A4 0.66TYP D1 0.2 0.35
A5 0.99TYP D2 7.62 7.87
B 6.3 6.5 Θ1 8ºTYP
C 7.2 Θ2 8ºTYP
C1 3.3 3.5 Θ3 5ºTYP

D2
C4

θ
C1

1
C

2
θ
C2
C3

θ
3
A2 D1
A5 A1 A3 A4 D

A
B

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AP8012 Chipown

IMPORTANT NOTICE

Chipown Microelectronics Co. Ltd. reserves the right to make changes without further notice to any products or
specifications herein. Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products
for any particular purpose, nor does Chipown Microelectronics Co. Ltd assume any liability arising out of the application
or use of any its products or circuits. Chipown Microelectronics Co. Ltd does not convey any license under its patent
rights or other rights nor the rights of others.

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