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N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

• Halogen-free
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
• TrenchFET® Power MOSFET
0.004 at VGS = 10 V 18
30 6.8 nC • Optimized for High-Side Synchronous
0.005 at VGS = 4.5 V 16 Rectifier Operation
• 100 % Rg Tested
• 100 % UIS Tested

APPLICATIONS
• Notebook CPU Core
- High-Side Switch
SO-8 D

S 1 8 D

S 2 7 D

S 3 6 D
G
G 4 5 D

Top View
S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 18
TC = 70 °C 16
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 15b, c
TA = 70 °C 13b, c
A
Pulsed Drain Current IDM 50
TC = 25 °C 3.8
Continuous Source-Drain Diode Current IS
TA = 25 °C 2.1b, c
Single Pulse Avalanche Current IAS 22
L = 0.1 mH
Avalanche Energy EAS 24 mJ
TC = 25 °C 4.5
TC = 70 °C 2.8
Maximum Power Dissipation PD W
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 22 28
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient ΔVDS/TJ 28
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -6
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 11 A 0.004
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 10 A 0.005
Forward Transconductancea gfs VDS = 15 V, ID = 11 A 52 S
Dynamicb
Input Capacitance Ciss 820
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 195 pF
Reverse Transfer Capacitance Crss 73
VDS = 15 V, VGS = 10 V, ID = 11 A 15 23
Total Gate Charge Qg
6.8 10.2
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 5 V, ID = 11 A 2.5
Gate-Drain Charge Qgd 2.3
Gate Resistance Rg f = 1 MHz 0.36 1.8 3.6 Ω
Turn-On Delay Time td(on) 16 24
Rise Time tr VDD = 15 V, RL = 1.4 Ω 12 18
Turn-Off Delay Time td(off) ID ≅ 9 A, VGEN = 4.5 V, Rg = 1 Ω 16 24
Fall Time tf 10 20
ns
Turn-On Delay Time td(on) 8 16
Rise Time tr VDD = 15 V, RL = 1.4 Ω 10 20
Turn-Off Delay Time td(off) ID ≅ 9 A, VGEN = 10 V, Rg = 1 Ω 16 24
Fall Time tf 8 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 25
A
Pulse Diode Forward Currenta ISM 50
Body Diode Voltage VSD IS = 9 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr 15 30 ns
Body Diode Reverse Recovery Charge Qrr 6 12 nC
IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 8
ns
Reverse Recovery Rise Time tb 7
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 5
VGS = 10 thru 4 V

40 4
TC = - 55 °C
I D - Drain Current (A)

I D - Drain Current (A)

30 3

20 2
VGS = 3 V
TC = 25 °C

10 1
TC = 125 °C

0 0
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.010 1200

0.008 VGS = 4.5 V

R DS(on) - On-Resistance (Ω)

900 Ciss
C - Capacitance (pF)

0.006
VGS = 10 V
600

0.004

300 Coss
0.002

Crss
0.000 0
0 10 20 30 40 50 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.8

ID = 11 A ID = 11 A
VGS - Gate-to-Source Voltage (V)

8
1.5
R DS(on) - On-Resistance

VGS = 10 V
VDS = 15 V
(Normalized)

6
VDS = 24 V 1.2

4 VGS = 4.5 V

0.9
2

0 0.6
0 4 8 12 16 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030

0.025
10

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C
0.020
1 TJ = 25 °C TJ = 125 °C
0.015

0.1
0.010
TJ = 25 °C
0.01
0.005

0.001 0.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.2 50

2.0
40

1.8
Power (W)

30
VGS(th) (V)

ID = 250 µA
1.6

20
1.4

10
1.2

1.0 0
- 50 - 25 0 25 50 75 100 125 150 10- 3 10- 2 10- 1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100
Limited by RDS(on)*

100 µA
10
I D - Drain Current (A)

1 ms

1 10 ms

100 ms

1s
0.1 10 s
TA = 25 °C
Single Pulse DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

18

15

I D - Drain Current (A)

12

0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

6
2.0

1.5
4
Power (W)
Power (W)

3
1.0

0.5
1

0
0.0
0 25 50 75 100 125 150
0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

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