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P-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free
VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) • TrenchFET® Power MOSFET
0.011 at VGS = - 10 V - 13.5 • 100 % Rg Tested RoHS
- 30 29.5 nC
0.015 at VGS = - 4.5 V - 11.6 • 100 % UIS Tested COMPLIANT

APPLICATIONS
• Load Switch
• Notebook Adaptor Switch

SO-8 S

S 1 8 D
S 2 7 D G
S 3 6 D
G 4 5 D

Top View
D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C - 13.5
TC = 70 °C - 11.9
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C - 10.9a, b
TA = 70 °C - 8.6a, b
A
Pulsed Drain Current IDM - 50
TC = 25 °C - 4.1
Continuous Source-Drain Diode Current IS
TA = 25 °C - 2.2a, b
Avalanche Current IAS - 20
L = 0.1 mH
Single-Pulse Avalanche Energy EAS 20 mJ
TC = 25 °C 5.0
TC = 70 °C 3.2
Maximum Power Dissipation PD W
TA = 25 °C 2.7a, b
TA = 70 °C 1.7a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 38 46
°C/W
Maximum Junction-to-Foot Steady State RthJF 20 25
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V
VDS Temperature Coefficient ΔVDS/TJ - 34 mV/
ID = - 250 µA
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.3 °C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.4 - 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5
On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 30 A
VGS = - 10 V, ID = - 10 A 0.011
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 8 A 0.015
Forward Transconductancea gfs VDS = - 10 V, ID = - 10 A 28 S
Dynamicb
Input Capacitance Ciss 2550
Output Capacitance Coss VDS = - 15 V, VGS = 0 V, f = 1 MHz 455 pF
Reverse Transfer Capacitance Crss 390
VDS = - 15 V, VGS = - 10 V, ID = - 10 A 57 86
Total Gate Charge Qg
29.5 45
nC
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 8
Gate-Drain Charge Qgd 22
Gate Resistance Rg f = 1 MHz 0.5 2.2 4.4 Ω
Turn-On Delay Time td(on) 13 25
Rise Time tr VDD = - 15 V, RL = 1.5 Ω 12 24
Turn-Off DelayTime td(off) ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 40 70
Fall Time tf 9 18
ns
Turn-On Delay Time td(on) 48 80
Rise Time tr VDD = - 15 V, RL = 1.5 Ω 92 160
Turn-Off DelayTime td(off) ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 34 60
Fall Time tf 19 35
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current IS TC = 25 °C - 4.1
A
Pulse Diode Forward Current ISM - 60
Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.75 - 1.2 V
Body Diode Reverse Recovery Time trr 27 45 ns
Body Diode Reverse Recovery Charge Qrr 16 27 nC
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 12
ns
Reverse Recovery Rise Time tb 15
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

60 10

48 8
VGS = 10 thru 4 V
I D - Drain Current (A)

I D - Drain Current (A)

36 6
TC = 125 °C

24 4

TC = 25 °C

12 2
TC = - 55 °C
VGS = 3 V
VGS = 2 V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.030 4000

Ciss
0.025 3200
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)

0.020 VGS = 4.5 V 2400

0.015 1600
VGS = 10 V Coss

0.010 800
Crss

0.005 0
0 10 20 30 40 50 60 0 5 10 15 20 25

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 1.6

ID = 10 A VDS = 10 V VGS = - 4.5 V

ID = - 10 A
V GS - Gate-to-Source Voltage (V)

8 1.4
VDS = 15 V
VGS = - 10 V
R DS(on) - On-Resistance
(Normalized)

6 1.2

4 1.0

VDS = 20 V
2 0.8

0 0.6
0 12 24 36 48 60 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100 0.10
ID = 10 A
TJ = 150 °C
10 0.08

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 25 °C
1 0.06

0.1 0.04

TJ = 125 °C
0.01 0.02

TJ = 25 °C
0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.8 170
ID = 250 µA
0.6
136
V GS(th) Variance (V)

0.4
Power (W)

102
ID = 5 mA
0.2

68
0.0

- 0.2 34

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*

10
I D - Drain Current (A)

1 ms

10 ms
1
100 ms

1s
0.1 10 s
DC
TA = 25 °C BVDSS
Single Pulse
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area

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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

17.0

13.6

ID - Drain Current (A)

10.2

6.8

3.4

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

6.0 2.0

4.8 1.6
Power (W)
Power (W)

3.6 1.2

2.4 0.8

1.2 0.4

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM -- TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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