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N-Channel 60-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Available
0.085 at VGS = 10 V 4.0 • TrenchFET® Power MOSFET
60 2.1 nC • 100 % Rg Tested
0.096 at VGS = 4.5 V 3.8
• 100 % UIS Tested

APPLICATIONS
• Battery Switch
• DC/DC Converter

D
TO-236
(SOT23)

G 1
G
3 D

S 2

S
Top View
N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 4.0
TC = 70 °C 3.4
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 3.1b, c
TA = 70 °C 2.5b, c
A
Pulsed Drain Current IDM 12
TC = 25 °C 1.39
Continuous Source-Drain Diode Current IS
TA = 25 °C 0.91b, c
Avalanche Current IAS 6
L = 0.1 mH
Single-Pulse Avalanche Energy EAS 1.8 mJ
TC = 25 °C 1.66
TC = 70 °C 1.06
Maximum Power Dissipation PD W
TA = 25 °C 1.09b, c
TA = 70 °C 0.7b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d ≤5s RthJA 90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 120 °C/W.

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MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = 250 µA 60 V
VDS Temperature Coefficient ΔVDS/TJ 55
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1 3 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 8 A
VGS = 10 V, ID = 1.9 A 0.075 0.085
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 1.7 A 0.086 0.096
Forward Transconductancea gfs VDS = 15V, ID = 1.9 A 5 S
Dynamicb
Input Capacitance Ciss 180
Output Capacitance Coss 22
VDS = 30 V, VGS = 0 V, f = 1 MHz pF
Reverse Transfer Capacitance Crss 13
VDS = 30 V, VGS = 10 V, ID = 1.9 A 4.2 6.1
Total Gate Charge Qg
2.1 3.2
nC
Gate-Source Charge Qgs VDS = 30 V, VGS = 4.5 V, ID = 1.9 A 0.7
Gate-Drain Charge Qgd 1
Gate Resistance Rg f = 1 MHz 0.6 2.2 5.1 Ω
Turn-On Delay Time td(on) 4 6
Rise Time tr VDD = 30 V, RL = 20 Ω 10 15
ns
Turn-Off Delay Time td(off) ID ≅ 1.5 A, VGEN = 10 V, RG = 1 Ω 10 15
Fall Time tf 7 10.5
Turn-On Delay Time td(on) 15 23
Rise Time tr VDD = 30 V, RL = 20 Ω 16 24
ns
Turn-Off Delay Time td(off) ID = 1.5 A, VGEN = 4.5 V, RG = 1 Ω 11 17
Fall Time tf 11 17
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 2.19
A
Pulse Diode Forward Currenta ISM 7
Body Diode Voltage VSD IS = 1.5 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr 15 23 ns
Body Diode Reverse Recovery Charge Qrr 10 15 nC
IF = 1.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 12
ns
Reverse Recovery Rise Time tb 3
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6 4

VGS = 10 thru 5 V
4
VGS = 4 V 3

I D - Drain Current (A)

I D - Drain Current (A)

TC = - 55 °C
2
2

1 TC = 125 °C

1
VGS = 3 V TC = 25 °C

VGS = 2 V
0 0
0 1 2 3 4 5 0.0 0.7 1.4 2.1 2.8 3.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.20 300

240
R DS(on) - On-Resistance (Ω)

0.16
Ciss
C - Capacitance (pF)

180

0.12 VGS = 4.5 V

120
VGS = 10 V
0.08
60
Coss

Crss
0.04 0
0 2 4 6 8 10 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 2.0
ID = 2 . 5 A
VGS - Gate-to-Source Voltage (V)

8 1.7 VGS = 1 0 V, I D = 2 . 5 A
VDS = 30 V
R DS(on) - On-Resistance
(Normalized)

6 1.4
VDS = 48 V

4 1.1 VGS = 4.5 V, ID = 1.7 A

2 0.8

0 0.5
0 1 2 3 4 5 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.35
ID = 2 . 5 A

0.25

R DS(on) - On-Resistance (Ω)

I S - Source Current (A)

TJ = 150 °C 0.20 TJ = 125 °C

TJ = 25 °C
1

0.15

0.10 TJ = 25 °C

0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 3 4 5 6 7 8 9 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.4 10

8
2.1
ID = 250 µA TA = 25 °C
Power (W)

6 Single Pulse
VGS(th) (V)

1.8
4

1.5
2

1.2 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

Limited by R DS(on)*

100 µs
I D - Drain Current (A)

1 ms

10 ms
0.1
100 ms

TA = 25 °C 1 s, 10 s
BVDSS Limited DC
Single Pulse
0.01
0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

I D - Drain Current (A)

30

0.0
0 25 50 75 100 125 150

TC - Case Temperature (°C)

Current Derating*

2.0 1.2

1.6
0.9
Power (W)

1.2
Power (W)

0.6

0.8

0.3
0.4

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Case Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
0.05 PDM

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

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RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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