Im3-Elx 2 Bsee 2a

Republic of the Philippines
NUEVA VIZCAYA STATE UNIVERSITY

Bambang, Nueva Vizcaya
INSTRUCTIONAL MODULE
IM No 3.: IM-ECE01-2NDSEM-2021-2022
College: Engineering
Campus: Bambang
DEGREE PROGRAM Bachelor of

Science in
COURSE NO. ECE 01
Electrical
Engineering
SPECIALIZATION COURSE TITLE Electronic Circuits: Devices and Analysis
YEAR LEVEL 2nd Year TIME FRAME 3 Hrs WK NO. 3 IM NO. 03
I. UNIT TITLE/CHAPTER TITLE
Diodes, V-I characteristics, diode circuits I
II. LESSON TITLE

I. Semiconductor diode
1. Basic Construction
2. Basic Operation
2.1 Biasing Arrangement
2.1.1 Forward-Bias Condition
2.1.2 Reverse-Bias Condition
2.2 Semiconductor Diode Characteristic Curve
2.3 Semiconductor Diode Breakdown Region
3 The Diode Characteristic Curves for Silicon, Germanium & Gallium Arsenide.
4. Temperature Effects
4.1 Diode Knee Voltage (VK)
4.2 The reverse current (I S)
III. LESSON OVERVIEW
This module provides the students the fundamentals of the semiconductor device part II, which
is mainly the electronic device nowadays. This module discusses the semiconductor device from its
initial state as a pure element; Silicon, Germanium, etc., up to its final complete material form, the
simplest electronics device the “Diode”.
IV. DESIRED LEARNING OUTCOMES
At the end of the lesson, the students should be able to:
1. Discuss the basic diode semiconductor construction.

2. Discuss of the basic operation and characteristics of a diode in
the no-bias, forward-bias, and reverse-bias regions.
3. Apply the diode Shockley’s Equation.
4. Apply the diode thermal voltage formula.
NVSU-FR-ICD-05-00 (081220) Page 1 of 13
3. Discuss the characteristic curves of three important semiconductor materials: Si, Ge & GaAs.
7. Explain the operation and characteristics of semiconductor diode in the breakdown region.
8. Discuss the semiconductor diode temperature effects.
9. Calculate the knee voltage of a semiconductor diode.
10. Calculate the Reverse Saturation Current of a semiconductor diode.
V. LESSON CONTENT
1. Semiconductor Diode Basic Construction
Now that both n - and p -type materials are readily available, we can now construct our first
solid-state electronic device: The semiconductor diode , with applications too numerous to mention,
is created by simply joining an n -type and a p -type material together as shown in Figure 1.1,
nothing more, just the joining of one material with a majority carrier of electrons to one with a
majority carrier of holes.
The semiconductor diode symbol is shown in Figure 1.2, where the parts are the anode (the
positive terminal) and the cathode (negative terminal). The characteristic curve is also shown in
Figure 1.3, illustrating the following parts: for the 1 st quadrant of the graph is called the forward-bias
region, wherein the diode is turn-on whenever the Q-point (Quiescent point or operating point) is
located here. On the other hand, when the Q-point is located at the third quadrant, the diode is in
the reverse-bias region, that is, the diode is turn-off.
Figure 1.1 Semiconductor diode basic construction
Figure 1.2 Semiconductor diode schematic symbol
The given characteristic curve is a silicon type of semiconductor diode as shown in Figure 1.3.
For the reason that the Knee Voltage VK is equal to 0.7 V or sometimes called Barrier potential.
Figure 1.3 Semiconductor diode characteristic curve
2. Semiconductor Diode Basic Operation

2.1 Biasing Arrangement
Upon joining the two different types of extrinsic semiconductor an n-type and p-type, depletion
region is formed at the junction of the materials as shown in Figure 2.1. The area near the pn junction
on both sides that has no majority carriers is called depletion region. Note the width of the depletion
region, in the next section this will be the main issue in determining the state of the diode.
Figure 2.1 Semiconductor diode internal distribution of charge
2.1.1 Forward-Bias Condition (VD > 0V)
A forward-bias or “on” condition is established by applying the positive potential of the dc source
to the p -type material and the negative potential to the n -type material as shown in Figure 2.2.
The application of a forward-bias potential V D (diode voltage) will “pressure” electrons in the n-
type material and holes in the p-type material to recombine with the ions near the boundary and reduce
the width of the depletion region as shown in Figure 2.2.
The resulting minority-carrier flow (leakage current) of electrons from the p-type material to the
n-type material (and of holes from the n-type material to the p-type material) has not changed in
magnitude (since the conduction level is controlled primarily by the limited number of impurities in the
material), but the reduction in the width of the depletion region has resulted in a heavy majority flow
across the junction.
An electron of the n-type material now “sees” a reduced barrier at the junction due to the
reduced depletion region and a strong attraction for the positive potential applied to the p-type material.
As the applied bias increases in magnitude, the depletion region will continue to decrease in width until
a huge number of electrons can pass through the junction, resulting in an exponential rise in current as
shown in the forward-bias region of the characteristics of Figure 2.6.
Note that the vertical scale (y-axis) of Figure 2.6 is measured in milliamperes (although some
semiconductor diodes have a vertical scale measured in amperes), and the horizontal scale (x-axis) in
the forward-bias region has a maximum of 1 V. Typically, therefore, the voltage across a forward-
biased diode will be less than 1 V. Note also how quickly the current rises beyond the knee of the
curve.
p-type n-type
Figure 2.2 Forward-Biased Semiconductor Diode
Again, looking at Figure 2.3, we find a forward-bias condition is established across a p – n

junction when the positive side of the applied voltage is applied to the p -type material (noting the
correspondence in the letter p ) and the negative side of the applied voltage is applied to the n -type
material. Note also the direction of the arrow, which flows from anode terminal to the cathode terminal
(unidirectional) only. The defined direction of conventional current for the positive voltage region
matches the arrowhead in the diode symbol.

Figure 2.3 Forward-bias polarity and direction of resulting current
It can be demonstrated through the use of solid-state physics that the general characteristics
of a semiconductor diode can be defined by the following equation, referred to as Shockley’s
equation, for the forward- and reverse-bias regions:
I =I ( e )
VD
nV T (A) (Equation # 1)
D s −1
Where: Is is the reverse saturation current

VD is the applied forward-bias voltage across the diode
n is an ideality factor, which is a function of the operating conditions and physical construction;
it
has a range between 1 and 2 depending on a wide variety of factors (n = 1 will be assumed
throughout this text unless otherwise noted).
The voltage VT is called the thermal voltage and is determined by the equation;
k TK
V T= (V) (Equation # 2)
q
Where: k is Boltzmann’s constant 1.38 x 10 -23 J/K

TK is the absolute temperature in kelvins = 273 + the temperature in °C
q is the magnitude of electronic charge = 1.6 x 10 -19 C
2.1.2 Reverse-Bias Condition (VD < 0V)
If an external potential of V volts is applied across the p – n junction such that the positive
terminal is connected to the n -type material and the negative terminal is connected to the p -type
material as shown in Figure 2.4 the number of uncovered positive ions in the depletion region of the n -
type material will increase due to the large number of free electrons drawn to the positive potential of
the applied voltage. For similar reasons, the number of uncovered negative ions will also increase in
the p -type material. The net effect, therefore, is a “widening” of the depletion region. This widening of
the depletion region will establish too great a barrier for the majority carriers to overcome, effectively
reducing the majority carrier flow to zero, as shown in Figure 2.4. The number of minority carriers
(leakage current), however, entering the depletion region will not change, resulting in minority-carrier
flow vectors of the same magnitude with no applied voltage. The current that exists under reverse-bias
conditions is called the reverse saturation current and is represented by Is.
p-type n-type
Figure 2.4 Reverse-Biased Semiconductor Diode

Figure 2.5 Reverse-bias polarity and direction of reverse saturation current.
The reverse saturation current is seldom more than a few microamperes and typically in nA,
except for high-power devices. The term saturation comes from the fact that it reaches its maximum
level quickly and does not change significantly with increases in the reverse-bias potential, as shown on
the diode characteristics of Figure 2.6 for VD = 0 V.
The reverse-biased conditions are depicted in Figure 2.5 for the diode symbol and p – n
junction. Note, in particular, that the direction of Is is against the arrow of the symbol. Note also that the
negative side of the applied voltage is connected to the p -type material and the positive side to the n -
type material,
the difference in underlined letters for each region revealing a reverse-bias condition
2.2 Semiconductor Diode Characteristic Curve
A plot of Equation # 1 with Is = 10 pA is provided in Figure 2.6 as the dashed line. Theoretically,
with all things perfect, the characteristics of a silicon diode should appear as shown by the dashed line
of Figure 2.6. However, commercially available silicon diodes deviate from the ideal for a variety of
reasons including the internal “body” resistance and the external “contact” resistance of a diode. Each
contributes to an additional voltage at the same current level, as determined by Ohm’s law, causing the
shift to the right witnessed in Figure 2.6. For the voltage V D there is also a measurable change in scale
between the right-hand region of the graph and the left-hand region. For positive values of V D the scale
is in tenths of volts, and for the negative region it is in tens of volts.
The actual reverse saturation current of a commercially available diode will normally be
measurably larger than that appearing as the reverse saturation current in Shockley’s equation. This
increase in IS level is due to a wide range of factors that include the following:
a. leakage currents
b. generation of carriers in the depletion region
c. higher doping levels that result in increased levels of reverse current
d. sensitivity to the intrinsic level of carriers in the component materials by a squared

factor - double the intrinsic level, and the contribution to the reverse current could
increase by a factor of four.
e. a direct relationship with the junction area - double the area of the junction, and
the contribution to the reverse current could double. High-power devices that have
larger junction areas typically have much higher levels of reverse current.
f. temperature sensitivity - for every 5°C increase in current, the level of reverse saturation
current in Equation # 1 will double, whereas a 10°C increase in current will result
in doubling of the actual reverse current of a diode.
Note in the above the use of the terms reverse saturation current and reverse current. The former is
simply due to the physics of the situation, whereas the latter includes all the other possible effects that
can increase the level of current.

Figure 2.6 Silicon Diode Characteristic Curve
2.3 Semiconductor Diode Breakdown Region
As illustrated in Figure 2.7, there is a point where the application of too negative a voltage with
the reverse polarity will result in a sharp change in the characteristics. The current increases at a very
rapid rate in a direction opposite to that of the positive voltage region. The reverse-bias potential that
results in this dramatic change in characteristics is called the breakdown potential and is given the label
VBV.
Figure 2.7 Semiconductor diode breakdown region
As the voltage across the diode increases in the reverse-bias region, the velocity of the minority
carriers responsible for the reverse saturation current Is will also increase. Eventually, their velocity and
associated kinetic energy will be sufficient to release additional carriers through collisions with
otherwise stable atomic structures.
That is, an ionization process will result whereby valence electrons absorb sufficient energy to
leave the parent atom. These additional carriers can then aid the ionization process to the point where
a high avalanche current is established and the avalanche breakdown region determined.

The avalanche region (VBV) can be brought closer to the vertical axis by increasing the doping
levels in the p - and n -type materials. However, as V BV decreases to very low levels, such as -5 V,
another mechanism, called Zener breakdown, will contribute to the sharp change in the characteristic. It
occurs because there is a strong electric field in the region of the junction that can disrupt the bonding
forces within the atom and “generate” carriers.
Although the Zener breakdown mechanism is a significant contributor only at lower levels of
VBV , this sharp change in the characteristic at any level is called the Zener region , and diodes
employing this unique portion of the characteristic of a p – n junction are called Zener diodes.
The breakdown region of the semiconductor diode described must be avoided if the response of
a system is not to be completely altered by the sharp change in characteristics in this reverse-
voltage region.
The maximum reverse-bias potential that can be applied before entering the breakdown region
is called the peak inverse voltage (referred to simply as the PIV rating) or the peak reverse voltage
(denoted the PRV rating). If an application requires a PIV rating greater than that of a single unit, a
number of diodes of the same characteristics can be connected in series. Diodes are also connected in
parallel to increase the current-carrying capacity.
In general, the breakdown voltage of GaAs diodes is about 10% higher those for silicon diodes
but after 200% higher than levels for Ge diodes.
3. The Diode Characteristic Curves for Silicon, Germanium & Gallium Arsenide.
A plot comparing the characteristics of Si, GaAs, and Ge diodes is provided in Figure 3.1 The
curves are not simply plot of Equation #1, but the actual response of commercially available units. The
total reverse current is shown and not simply the reverse saturation current. It is immediately obvious
that the point of vertical rise in the characteristics is different for each material, although the general
shape of each characteristic is quite similar.
Germanium is closest to the vertical axis ( y-axis) and GaAs is the most distant. As noted on the
curves, the center of the knee (hence the K is the notation V K) of the curve is about 0.3 V for Ge, 0.7 V
for Si, and 1.2 V for GaAs as illustrated in Table 3.1. The shape of the curve in the reverse-bias region
is also quite similar for each material, but notice the measurable difference in the magnitudes of the
typical reverse saturation currents. For GaAs, the reverse saturation current is typically about 1 pA,
compared to 10 pA for Si and 1 mA for Ge, a significant difference in levels. Also note the relative
magnitudes of the reverse breakdown voltages for each material. GaAs typically has maximum
breakdown levels that exceed those of Si devices of the same power level by about 10%, with both
having breakdown voltages that typically extend between 50 V and 1 kV.

Figure 3.1 Comparison of Ge, Si, and GaAs commercial diodes.
There are Si power diodes with breakdown voltages as high as 20 kV. Germanium typically has
breakdown voltages of less than 100 V, with maximums around 400 V. The curves of Figure 3.1 are
simply designed to reflect relative breakdown voltages for the three materials. When one considers the
levels of reverse saturation currents and breakdown voltages, Ge certainly sticks out as having the
least desirable characteristics. A factor not appearing in Figure.3.1 is the operating speed for each
material—an important factor in today’s market.
For each material, the electron mobility factor is provided in Table 3.2. It provides an indication
of how fast the carriers can progress through the material and therefore the operating speed of any
device made using the materials. We can obviously say that, GaAs stands out, with a mobility factor
more than five times that of silicon and twice that of germanium. The result is that GaAs and Ge are
often used in high-speed applications. However, through proper design, careful control of doping levels,
and so on, silicon is also found in systems operating in the gigahertz range. Research today is also
looking at compounds in groups III–V that have even higher mobility factors to ensure that
industry can meet the demands of future high-speed requirements.
Table3.1 Electron Mobility factor µn of Ge, Si and GaAs
Table3.2 Electron Mobility factor µn of Ge, Si and GaAs
4. Temperature Effects
Temperature can have a remarkable effect on the characteristics of a semiconductor diode, as

Will be demonstrated later by the characteristics of a silicon diode shown in Figure 4.1.
4.1 Diode Knee Voltage (VK)
In the forward-bias region the characteristics of a silicon diode shift to the left at a rate of 2.5 mV per
centigrade degree increase in temperature.

Figure 4.1 Variation in Si diode characteristics with temperature change
Let’s assume an increase from room temperature (20°C) to 100°C (the boiling point of water)
results in a drop of 80(2.5 mV) = 200 mV, or 0.2 V, which is significant on a graph scaled in tenths of
volts. While the decrease in temperature has the reverse effect, in which the characteristic shift to the
right as also shown in the Figure 4.1
4.2 The reverse current (IS)
Let’s assume that a change of temperature from 20°C to 100°C, the level of Is increases from
10 nA to a value of 2.56 µA, which is a significant, 256-fold increase in leakage current. Continuing to
200°C would result in a monstrous reverse saturation current of 2.62 mA.
For high-temperature applications one would therefore look for Si diodes with room-temperature
Is closer to 10 pA, a level commonly available today, which would limit the current to 2.62 μA. It is
indeed fortunate that both Si and GaAs have relatively small reverse saturation currents at room
temperature.
GaAs devices are available that work very well in the -200°C to +200°C temperature range, with
some having maximum temperatures approaching 400°C. Consider, for a moment, how huge the
reverse saturation current would be if we started with a Ge diode witha saturation current of 1 mA and
applied the same doubling factor.
4.3 Reverse Breakdown Voltage

The reverse breakdown voltage of a semiconductor diode will increase or decrease with
temperature. However, if the initial breakdown voltage is less than 5 V, the breakdown voltage may
actually decrease with temperature.
The Current Commercial Use of Ge, Si, and GaAs
Ge: Germanium is in limited production due to its temperature sensitivity and high reverse saturation
current. It is still commercially available but is limited to some high-speed applications (due to a
relatively high mobility factor) and applications that use its sensitivity to light and heat such as
photodetectors and security systems.
Si: Without question the semiconductor used most frequently for the full range of electronic devices.
It has the advantage of being readily available at low cost and has relatively low reverse
saturation currents, good temperature characteristics, and excellent breakdown voltage levels. It
also benefits from decades of enormous attention to the design of large-scale integrated
circuits and processing technology.
GaAs: Since the early 1990s the interest in GaAs has grown in leaps and bounds, and it will eventually
take a good share of the development from silicon devices, especially in very large scale
integrated circuits. Its high-speed characteristics are in more demand every day, with the added
features of low reverse saturation currents, excellent temperature sensitivities, and high
breakdown voltages.
More than 80% of its applications are in optoelectronics with the development of light-
emitting diodes, solar cells, and other photodetector devices, but that will probably change
dramatically as its manufacturing costs drop and its use in integrated circuit design continues
to grow; perhaps the semiconductor material of the future.
6. Problem Solving
6.1 Example # 1
At a temperature of 27°C (common temperature for components in an enclosed operating system),

determine the thermal voltage VT.

Solution: Using Equation # 2, we obtain;
T =273+° C = 300 K
− 23
10 j
(1.38 x )(300 K )
k TK k
V T= = −19
q 1.6 x 10 C
VT = 25.875 mV ≅ 26 mV
6.2 Example # 2
Using the curves of Figure 3.1
a. Determine the voltage across each diode at a current of 1 mA.

b. Repeat for a current of 4 mA.
c. Repeat for a current of 30 mA.
d. Determine the average value of the diode voltage for the range of currents listed above.
e. How do the average values compare to the knee voltages listed in Table 3.2.
Solution:
a. VD(Ge) = 0.2 V, VD (Si) = 0.6 V, VD (GaAs) = 1.1 V

b. VD (Ge) = 0.3 V, VD (Si) = 0.7 V, VD (GaAs) = 1.2 V
c. VD (Ge) = 0.42 V, VD (Si) = 0.82 V, VD (GaAs) = 1.33 V
d. Ge: Vav = (0.2 V + 0.3 V + 0.42 V)/3 = 0.307 V
Si: Vav = (0.6 V + 0.7 V + 0.82 V)/3 = 0.707 V
GaAs: Vav = (1.1 V + 1.2 V + 1.33 V)/3 = 1.21 V
e. Very close correspondence. Ge: 0.307V vs. 0.3V, Si: 0.707 V vs. 0.7V, GaAs: 1.21 V vs. 1.2 V.
VI. LEARNING ACTIVITIES
1. MATCHING TYPE
DIRECTION: Match each definition in Column A with its example in Column B by connecting a line.
A. Definition B. Term/Example
1. The bias condition of the diode that allows current to pass

through the diode. 1 Bias
2. The application of a de voltage to a diode, transistor, or other

device to produce a desired mode of operation. 2 Zener Breakdown
3. The phenomenon of a sudden and drastic increase when a certain

voltage is reached across a device 3 Barrier Potential
4. The lower voltage breakdown in a zener diode. 4 pn junction
5. A material that lies between conductors and insulators in its conductive

properties. 5 Reverse bias
6. The bias condition in which a diode prevents current flow.6 Insulator
7. The boundary between two different types of semi-conductive

materials. 7 Breakdown
8. A material that does not conduct current flow. 8 Semiconductor

9. The amount of voltage required to move electrons through the electric Leakage Current
field across the depletion region of a diode. 9
10. The reverse saturation current or reverse current is normally called Forward bias
__________.
2. DRAWING ACTIVITY
DIRECTION: Using a black ball pen, draw the required figure of the following questions:
1. Show the effect of applying a

negative potential to the cathode
and positive potential to the
anode by drawing the
semiconductor diode internal
distribution of charges.
2. Draw the symbol for the

semiconductor diode.
3. Draw the characteristic curves

of the three semiconductor
materials: Ge, Si and GaAs on a
single graph.

3. MODIFIED TRUE OR FALSE
DIRECTION: Write TRUE if the statement is correct but if it’s false, change the underlined word or
group
of words to make the whole statement correct.
____________________ 1. The reverse bias is located at the first quadrant of the semiconductor
characteristic curve
____________________ 2. The defined direction of conventional current for the positive voltage region
matches the arrowhead in the diode symbol.
____________________ 3. The actual reverse saturation current of a commercially available diode will
normally be measurably larger than that appearing as the reverse
saturation
current in Shockley’s equation.
_____ ______________ 4. The ionization process result whereby any electrons absorb sufficient
energy to leave the parent atom.
________ ____________ 5. The GaAs is more than ten times faster that of silicon and twice that
of germanium.
____________________ 6. In the forward-bias region, the characteristics of a silicon diode shift to

the right at a rate of 2.5 mV per centigrade degree increase in
temperature.
____________________ 7. In the reverse-bias region, the reverse current of a silicon diode doubles for
every 5°C rise in temperature.
____________________ 8. The reverse breakdown voltage of a semiconductor diode will increase

or decrease with temperature.
____________________ 9. The maximum reverse-bias potential that can be applied before entering
the breakdown region is called the peak inverse voltage or the peak
reverse voltage
___________________ 10. The current that exists under forward-bias conditions is called the
reverse saturation current and is represented by Is .
VII. EVALUATION (Note: Not to be included in the student’s copy of the IM)
I. ONLINE ASSIGNMENTS
II. ONLINE QUIZZES

VIII. ASSIGNMENTS
1. Problem Solving Type

Direction: Answer the following problem solving by showing the complete solution, no short-cuts.
1. Determine the thermal voltage (VT) for a diode at a temperature of 20°C.
2. For the same diode of Problem 1, find the diode current using Equation# 1, if Is = 40 nA, n = 2 (low
value of VD), and the applied bias voltage is 0.5 V.
3. Repeat Problem 2 for T = 100°C (boiling point of water). Assume that Is has increased to 5.0 µA.
4. Given a diode current of 6 mA, VT = 26 mV, n = 1, and Is = 1 nA, find the applied voltage VD
5. In the reverse-bias region, the saturation current of a silicon diode is about 0.1 µA (T = 20°C).
Determine its approximate value if the temperature is increased 40°C.
IX. REFERENCES
A. Book/Printed Resources
Boylestad, R.L. & Nashelsky, L. (2013). Electronic devices and circuit theory (11th Ed.) Pearson
Education
South Asia. Singapore
Floyd, T.L. (2005). Electronic devices: conventional current version (7th Ed.). Pearson Education South
Asia. Singapore.
Neamen, D.A. (2002). Electronics circuit analysis and design (2nd Ed.). Philippines: McGraw-Hill
International Edition.
B. e-Resources/ e-Book
Schultz, Mitchel E. (2016). Grob Basic Electronics. ( 12 Edition). McGraw-Hill Education, 2 Penn Plaza,
New York, NY 10121. https://engineeringbookslibrary.com/grobs-basic-electronics-12th-edition/
MIT OpenCourseWare ( 30 August 2019) Circuits and Electronics

http://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-002-circuits-and-electronics-
spring-2007
Dube.D.C. ( 30 August 2019 ) Electronics I https://freevideolectures.com/course/3062/electronics-i

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Republic of the Philippines

NUEVA VIZCAYA STATE UNIVERSITY

DEGREE PROGRAM Bachelor of

I. UNIT TITLE/CHAPTER TITLE

Diodes, V-I characteristics, diode circuits I

II. LESSON TITLE

2.1 Biasing Arrangement

2.1.1 Forward-Bias Condition

2.1.2 Reverse-Bias Condition

2.2 Semiconductor Diode Characteristic Curve

2.3 Semiconductor Diode Breakdown Region

4.1 Diode Knee Voltage (VK)

4.2 The reverse current (I S)

III. LESSON OVERVIEW

IV. DESIRED LEARNING OUTCOMES

At the end of the lesson, the students should be able to:

1. Discuss the basic diode semiconductor construction.

1. Semiconductor Diode Basic Construction

Figure 1.1 Semiconductor diode basic construction

Figure 1.2 Semiconductor diode schematic symbol

Figure 1.3 Semiconductor diode characteristic curve

2. Semiconductor Diode Basic Operation

2.1 Biasing Arrangement

Figure 2.1 Semiconductor diode internal distribution of charge

2.1.1 Forward-Bias Condition (VD > 0V)

Figure 2.2 Forward-Biased Semiconductor Diode

Again, looking at Figure 2.3, we find a forward-bias condition is established across a p – n

NVSU-FR-ICD-05-00 (081220) Page 3 of 13

Figure 2.3 Forward-bias polarity and direction of resulting current

Where: Is is the reverse saturation current

Where: k is Boltzmann’s constant 1.38 x 10 -23 J/K

2.1.2 Reverse-Bias Condition (VD < 0V)

Figure 2.4 Reverse-Biased Semiconductor Diode

NVSU-FR-ICD-05-00 (081220) Page 4 of 13

Figure 2.5 Reverse-bias polarity and direction of reverse saturation current.

2.2 Semiconductor Diode Characteristic Curve

b. generation of carriers in the depletion region

c. higher doping levels that result in increased levels of reverse current

d. sensitivity to the intrinsic level of carriers in the component materials by a squared

NVSU-FR-ICD-05-00 (081220) Page 5 of 13

Figure 2.6 Silicon Diode Characteristic Curve

2.3 Semiconductor Diode Breakdown Region

Figure 2.7 Semiconductor diode breakdown region

NVSU-FR-ICD-05-00 (081220) Page 6 of 13

NVSU-FR-ICD-05-00 (081220) Page 7 of 13

Figure 3.1 Comparison of Ge, Si, and GaAs commercial diodes.

Table3.1 Electron Mobility factor µn of Ge, Si and GaAs

Table3.2 Electron Mobility factor µn of Ge, Si and GaAs

Temperature can have a remarkable effect on the characteristics of a semiconductor diode, as

4.1 Diode Knee Voltage (VK)

NVSU-FR-ICD-05-00 (081220) Page 8 of 13

Figure 4.1 Variation in Si diode characteristics with temperature change

4.2 The reverse current (IS)

4.3 Reverse Breakdown Voltage

The Current Commercial Use of Ge, Si, and GaAs

At a temperature of 27°C (common temperature for components in an enclosed operating system),

NVSU-FR-ICD-05-00 (081220) Page 9 of 13

a. Determine the voltage across each diode at a current of 1 mA.

a. VD(Ge) = 0.2 V, VD (Si) = 0.6 V, VD (GaAs) = 1.1 V