Experiment No 11 - Pagenumber

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Experiment No.

11: Characteristics of P-N Junction Diode

1. Objective
The objective of this experiment is to observe and plot forward and reverse V-I Characteristics of a P-N
junction diode.

2. Apparatus
• Resistor (470Ω, 1k Ω)
• Bread Board
• Digital Multi-meter
• Variable DC power supply(maximum 30V)
• Diode

3. Theory
Diodes are semiconductor devices which have conductivity between conductors and insulators. By the
process of doping, P type and N type semiconductors are formed. By doping with penta-valent and trivalent
element, P-N junction diode is form.

Application of voltage across a diode, transistor etc. is called Biasing. A diode can be in three states. It can
be in an unbiased, forward biased or reverse biased condition. In forward biased condition, positive terminal
of diode is connected to positive terminal of battery while in reverse biased condition; they are connected
in reverse polarities as shown in the Figure 11.1 (a) and (b).

(a)
(b)

Figure 11.1: Biasing of a Diode (a) Forward (b) Reverse

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4. Procedure
1. Construct the circuit as shown in the Figure 11.1(a).
2. Do not switch on the power supply. Connect the resistor R of value 470Ω.
3. Turn on the power supply and increase voltage from the power supply from 0.1V to 1V in given
steps as shown in the Table 11.1.
4. Measure and record in turn, the voltage VF (V) and current IF (mA) at each of the voltage settings
shown in the Table 11.1.
5. Plot VI characteristics for forward bias of diode in the Figure 11.2.
6. Now construct the circuit as shown in the Figure 11.1(b).
7. Do not switch on the power supply. Connect the resistor R of value 1kΩ.
8. Turn on the power supply and increase voltage from the power supply from 0V to 20V in given
steps as shown in the Table 11.2.
9. Measure and record in turn, the voltage VR (V) and current IR (µA) at each of the voltage settings
shown in the Table 11.2
10. Plot VI characteristics for forward bias of diode in the Figure 11.3.

Table 11.1: Forward Characteristics of Diode

Voltage VF IF
S. No.
(V) (V) (mA)

1 0.1

2 0.2

3 0.3

4 0.4

5 0.5

6 0.6

7 0.7

8 0.8

9 0.9

10 1.0

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Table 11.1: Reverse Characteristics of Diode

Voltage VR IR
S. No.
(V) (V) (µA)

1 2

2 4

3 6

4 8

5 10

6 12

7 14

8 16

9 18

10 20

Figure 11.2: Forward V-I Characteristics of Diode

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Figure 11.3: Reverse V-I Characteristics of Diode

5. Questions
1. Examine your graph of Figure 11.3 and describe the change in the current.

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6. Conclusions

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Experiment 11
Characteristics of P-N Junction Diode

Does not meet


Exceeds expectation Meets expectation Marks
Performance expectation
(5) (4-3)
(2-1)

1. Conducting Expertly setup the Needs little guidance to Unable to setup the
Experiment apparatus to measure setup the apparatus and apparatus and
[CLO-1]
the voltage across and measure the voltage measure the voltage
current through the across and current across and current
diode in forward and through the diode. through the diode.
reverse biasing.
2. Teamwork Actively engages Cooperates with other Distracts or discourages
[CLO-2] and cooperates group members in a other group members
with other group reasonable manner. from conducting the
members in an experiment.
effective manner.

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